A5024600483- Advanced Thermoelectric Materials and Devices
- Chalcogenide Semiconductor Thin Films
- Thermal properties of materials
- Perovskite Materials and Applications
- Thermal Radiation and Cooling Technologies
- Gas Sensing Nanomaterials and Sensors
- Transition Metal Oxide Nanomaterials
- Conducting polymers and applications
- Perfectionism, Procrastination, Anxiety Studies
- Advanced Photocatalysis Techniques
- 2D Materials and Applications
- Crystallization and Solubility Studies
- Thermal Expansion and Ionic Conductivity
- X-ray Diffraction in Crystallography
- Advanced Thermodynamics and Statistical Mechanics
- Nonlinear Waves and Solitons
- MXene and MAX Phase Materials
- Crystal Structures and Properties
- Solid-state spectroscopy and crystallography
- Nonlinear Photonic Systems
- Quantum Dots Synthesis And Properties
- Quantum Mechanics and Non-Hermitian Physics
- Covalent Organic Framework Applications
- Heusler alloys: electronic and magnetic properties
- Graphene research and applications
Jinan University
2025
University of Electronic Science and Technology of China
2020-2024
Harbin Institute of Technology
2009-2024
Xi'an Jiaotong University
2021-2024
Collaborative Innovation Center of Chemistry for Energy Materials
2024
Xiamen University
2024
Zhuhai Institute of Advanced Technology
2024
Beijing Institute of Technology
2021-2024
Beihang University
2014-2023
University of Manitoba
2021-2023
Lower-cost thermoelectrics Thermoelectric materials convert heat to electricity, making them attractive for harvesting or cooling applications. However, many high-performance are made of expensive toxic materials. He et al. found that a material composed primarily tin and sulfur could be optimized have relatively good thermoelectric properties. Introducing about 10% selenium sulfide helped tune these properties by electronic band manipulation. This is step toward more earth-abundant, less...
Operating across a wide temperature range is priority for thermoelectric materials
We provide direct evidence to understand the origin of low thermal conductivity SnSe using elastic measurements. Compared state-of-the-art lead chalcogenides $\mathrm{Pb}Q(Q=\mathrm{Te}$, Se, S), exhibits values sound velocity $(\ensuremath{\sim}1420\phantom{\rule{0.28em}{0ex}}\mathrm{m}/\mathrm{s})$, Young's modulus $(E\ensuremath{\sim}27.7\phantom{\rule{0.28em}{0ex}}\mathrm{GPa})$, and shear $(G\ensuremath{\sim}9.6\phantom{\rule{0.28em}{0ex}}\mathrm{GPa})$, which are ascribed extremely...
Abstract PbTe is a typical intermediate-temperature thermoelectric material, which has undergone extensive developments and achieved excellent high performance. In this perspective we summarized several strategies that were successfully applied in PbTe-based materials through manipulating charge phonon transports, such as optimizing carrier density to tune Fermi level, tailoring band structure enhance effective mass, designing all-scale hierarchical architectures suppress propagation....
Heavy MnTe alloying can significantly improve the electrical and thermal transport properties of SnTe<italic>via</italic>multiple approaches.
We report enhanced thermoelectric performance in SnTe, where significantly improved electrical transport properties and reduced thermal conductivity were achieved simultaneously. The former was obtained from a larger hole Seebeck coefficient through Fermi level tuning by optimizing the carrier concentration with Ga, In, Bi, Sb dopants, resulting power factor of 21 μW cm–1 K–2 ZT 0.9 at 823 K Sn0.97Bi0.03Te. To reduce lattice without deteriorating mobility Sn0.97Bi0.03Te, SrTe chosen as...
High thermoelectric performance of n-type PbTe is urgently needed to match its p-type counterpart. Here, we show a peak ZT ∼ 1.5 at 723 K and record high average > 1.0 300–873 realized in by synergistically suppressing lattice thermal conductivity enhancing carrier mobility introducing Cu2Te inclusions. Cu performs several outstanding roles: atoms fill the Pb vacancies improve mobility, contributing an unexpectedly power factor ∼37 μW cm–1 K–2 423 K; filling interstitials both induce local...
Synergistically optimizing the band structure and introducing point defects lead to remarkably high <italic>ZT</italic> in n-type PbTe–MnTe.
Low-cost and earth-abundant PbS-based thermoelectrics are expected to be an alternative for PbTe, have attracted extensive attentions from thermoelectric community. Herein, a maximum ZT (ZTmax) ≈ 1.3 at 923 K in n-type PbS is obtained through synergistically optimizing quality factor with Sn alloying PbTe phase incorporation. It found that can sharpen the conduction band shape balance contradictory interrelationship between carrier mobility effective mass, accordingly, peak power of ∼19.8...
Abstract Lead sulfide (PbS) presents large potential in thermoelectric application due to its earth‐abundant S element. However, inferior average ZT ( ave ) value makes PbS less competitive with analogs PbTe and PbSe. To promote performance, this study implements strategies of continuous Se alloying Cu interstitial doping synergistically tune thermal electrical transport properties n ‐type PbS. First, the lattice parameter 5.93 Å is linearly expanded 6.03 0.5 increasing content. This...
PbSe-based thermoelectric materials exhibit promising ZT values at medium temperature, but its near-room-temperature properties are overlooked, thus restricting average (ZTave) value low-medium temperatures. Here, a high ZTave of 0.90 low temperature (300-573 K) is reported in n-type material (Pb1.02Se0.72Te0.20S0.08-0.3%Cu), resulting large 0.96 temperatures (300-773 K). This performance stems from ultralow lattice thermal conductivity caused by dense dislocations through heavy Te/S...
High PF ave of 24.18 μW cm −1 K −2 and ZT 1.01 at 300–773 have been achieved in n-type Pb 1.02 Se–0.2%Cu thermoelectric through dual Cu interstitial doping, it exceeds other Se/S-based (Te free) materials.
High <italic>ZT</italic> value of ∼1.2 at 773 K was achieved in n-type polycrystalline SnSe.
Schematically deciphering the electrochemical mechanism of electrochromic NiO<sub>x</sub> thin film based on Li<sup>+</sup>-ion electrolytes.
Realizing high thermoelectric performance requires electrical transport properties and low thermal conductivity, which are essentially determined by balancing the interdependent controversy of carrier mobility, effective mass, lattice conductivity. Here, we observed an electronic band inversion (approaching topological insulating states) in Sn Se co-alloyed PbTe, resulting optimizing mass mobility. The alloying PbTe(Se) can narrow its gap due to induce a sharper conduction (equals lower...
Recent vast reinvestigations on GeTe, a promising thermoelectric material at medium temperature, have triggered enormous enthusiasm in the community again. Intrinsically, as p-type semiconductor, possesses plenty of Ge vacancies, resulting extremely high carrier concentration. Meanwhile, because off-stoichiometric Ge, both concomitant precipitates and vacancies will influence electrical thermal transport properties caused by phonons carriers scattering. Herein, we report one effective way to...
Carrier mobility is a key parameter for thermoelectric performance. A high average ZT value of ∼1.13 can be achieved in n-type PbSe–18%SnS–0.5%Cu at 300–873 K through the rational optimization carrier mobility.
Abstract Excellent thermoelectric cooling and power generation are simultaneously realized in an n‐type PbTe‐based material. The temperature difference (Δ T ) of ≈15.6 K, maximum density ≈0.4 W cm −2 conversion efficiency ≈1.5% with C = 295 K H 765 can be obtained a single‐leg device composed PbTe‐30%SnSe‐1.5%Cu. This advanced performance PbTe‐30%SnSe‐1.5%Cu mainly originates from its high‐ranged ZT value achieved through optimizing bandgap, carrier density, microstructure. bandgap PbTe is...