A5045653469- Fusion materials and technologies
- Nuclear Materials and Properties
- Hydrogen embrittlement and corrosion behaviors in metals
- Advanced materials and composites
- Metal and Thin Film Mechanics
- Radioactive element chemistry and processing
- Metallurgical and Alloy Processes
- Intermetallics and Advanced Alloy Properties
- Metal Alloys Wear and Properties
- Corrosion Behavior and Inhibition
- Hydrogen Storage and Materials
- Advancements in Materials Engineering
- Advanced Chemical Physics Studies
- Ion-surface interactions and analysis
- Microstructure and Mechanical Properties of Steels
- Nuclear materials and radiation effects
Dalian Maritime University
2021-2024
The clustering behaviors and stable configurations of vacancies with the size up to 30 in vanadium were studied by first-principles investigations. average formation energies per vacancy clusters decreases sizes. When Vn cluster odd forms Vn+1 cluster, energy has a lager reduction relative case even size. stabilities increase sizes terms total binding (n = 2–30), incremental show an increasing trend fluctuation sizes, which can be explained both characteristics terrace-ledge-kink model. We...
We systemically investigated helium (He) interacting with 27 substitutional solute elements in vanadium by first-principles calculations. The interactions between early three 3d/4d/5d transition solutes and He are attractive while they repulsive for other elements, still favors tetrahedral sites. predicted the influence of on effective diffusivity, Sc/Ti/Y/La can obviously reduce diffusivity show little effect. Moreover, we studied synergistic defect complex He, vacancy. binding group...
Effect of Ti/Y/O element on helium (He) clustering in vacancy (Vac) defect vanadium (V) alloy were investigated using first-principles calculations. We first calculated the formation and binding energies Hen clusters Vac-X (X=O/O-Ti/O-4Ti/O-3Ti-Y) configurations, values for O-3Ti-Y configuration are obviously reduced by 0.2-1.6 eV with respect to those alone Vac. In presence O, He still favors octahedral interstitial site at a The Vac-O-Ti Vac-O-4Ti defects close Vac-O n=1∼5 (n represents...