Directed self-assembly (DSA) of block copolymers (BCPs), either by selective wetting surface chemical prepatterns or graphoepitaxial alignment with topography, has ushered in a new era for high-resolution nanopatterning. These pioneering approaches, while effective, require expensive and time-consuming lithographic patterning each substrate to direct the assembly. To overcome this shortcoming, nanoimprint molds—attainable via low-cost optical lithography—were investigated their potential be...

Cellulose nanofiber (CNF)-reinforced polypropylenes (PPs) with different CNF content were investigated by Fourier transform terahertz (THz) spectroscopy over the frequency range of 1–10 THz. Absorption peaks pure PP identified at 3.1, 5.1, 7.5, and 9.6 THz, which indicate isotactic structure is formed. A new peak 7.0 THz appeared when was added, while remained unchanged. Conventional X-ray diffraction (XRD) also performed for comparison. The XRD results do not allow to determine effect in...

Photo-induced carrier processes at the heteromolecular interface of N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) and quaterrylene (QT) on a molecular scale were examined by optical photoelectron spectroscopy. The energy level alignments molecules determined X-ray spectroscopy absorption spectra for detailed investigation photo-induced process analysed. A reduction in photoluminescence from PTCDI-C8 QT was observed, clearly demonstrating that excitons generated layer are effectively...

We used fluorescence microscopy to show that low adsorption of resin components by a mold surface was necessary for continuous ultraviolet (UV) nanoimprinting, as well generation release energy on detachment cured from template mold. This is because with pollution, fracture demolding occurred at the interface between and surfaces rather than outermost part resin. To achieve we investigated radical photopolymerization behaviors fluorescent UV-curable resins mechanical properties (fracture...

Abstract A sigle‐electron tunneling (SET) in a metal‐insulator‐semiconductor (MIS) structure is demonstrated, which C 60 and copper phthalocyanine (CuPc) molecules are embedded as quantum dots the insulator layer. The SET found to originate from resonant via energy levels of molecules, (e.g., highest occupied molecular orbital (HOMO) lowest unoccupied (LUMO)). These findings show that threshold voltages for tunable according molecules. Furthermore, observable even near room temperature....

We designed and set up an apparatus of oxygen reactive ion etching (O2 RIE) with parallel electrode configuration to remove a residual layer located on concave parts ultraviolet nanoimprinted resist patterns maintain the pattern linewidth after dry etching. Imprint 45 nm line-and-space silicon wafer were fabricated bisphenol A-based UV-curable resin (NL-KK1) fluorinated replica mold under easily condensable gas atmosphere. Cross-sectional field-emission scanning electron microscope...

The structures of C60 thin films grown on Si, SiO2, and Al2O3 are studied by a low-glancing-angle x-ray diffraction method the properties field effect transistors (FETs) understood basis this technique. Analyses using two-dimensional Ewald circle Laue function give detailed interpretation peaks together with information preferred orientation grain size polycrystalline films. varies from 100 to 500 Å upon optimal conditions film growth 〈111〉 crystal axis random substrate surface is obtained....

By scanning transmission electron microscopy and energy dispersive X-ray spectroscopy (STEM–EDS), we investigated the elemental depth profiles of organic beam resist films after sequential infiltration synthesis (SIS) inorganic alumina. Although a 40-nm-thick poly(methyl methacrylate) (PMMA) film was entirely hybridized with alumina, an uneven distribution observed near interface between substrate as well surface. The around center 100-nm-thick PMMA film. thicknesses CSAR62 decreased almost...

Abstract We demonstrated a coating method of screen printing for discharging droplets high-viscosity resin on substrate ultraviolet (UV) nanoimprint lithography (NIL). Compared with spin-coated film silicon substrate, discharged were effective in terms the uniformity residual layer thickness (RLT) contact mold various pattern densities. Fluorescence microscope observations fluorescent-dye-containing UV-curable enabled evaluation shapes surface. Widely used mesh plates composed stainless...

Ultraviolet (UV) nanoimprint lithography is a promising nanofabrication technology with cost efficiency and high throughput for sub-20 nm size semiconductor, data storage, optical devices. To test formability of organic resist mask patterns, we investigated whether the type polymerizable di(meth)acrylate monomer affected fabrication cured resin nanopillars by UV nanoimprinting using molds pores around 20 nm. We used carbon-coated, porous, anodic aluminum oxide (AAO) films prepared...

We investigated the evolution of quaterrylene thin films on SiO(2) and an octadecyltrichlorosilane self-assembled monolayer (OTS-SAM) to examine impact film strains growth processes evolving structure. Surface modification by SAMs allowed tailoring process from a Stranski-Krastanov (SK) mode (layer-plus-island) surface Frank-van der Merwe (layer-by-layer) OTS surface. Detailed structural analysis x-ray diffraction techniques confirmed that SK was driven lattice strain in initial wetting...

The authors demonstrated a “print and imprint” method comprising screen printing ultraviolet (UV) nanoimprinting for preparing sub-100-nm-wide cured resin patterns. In the printing, UV-curable resins with viscosities in range of 6.26–266 Pa s were deposited as droplet shapes on Si surfaces using polyimide through-hole membrane mask hole diameter 10 μm pitch 45 μm. low-volatile high-viscosity 12.8 had an advantage maintaining 3 h after deposition. spherical segment-shaped droplets showed...

High quality BaTiO3 thin-film epitaxially grown on a Nb-doped SrTiO3 (BTO/Nb-STO) substrate by laser ablation technique is employed as high-k gate insulator for field-effect transistor of rubrene single crystal in order to search the possibility high carrier accumulation. The dielectric constant ϵ 280esu prepared accumulates 0.1holes∕rubrene-molecule, which 2.5 times maximum number 0.04holes∕rubrene-molecule attained case SiO2. This highest so far obtained organic transistors (FETs). Other...

The growth process of quaterrylene thin films was examined by atomic force microscopy and in-plane out-of-plane X-ray diffraction (XRD). Quaterrylene on the SiO2 surface exhibit Stranski−Krastanov (SK) mode; initially formed two-dimensional (2D) layers (<4 monolayers (ML)) followed three-dimensional (3D) island growth. Grazing incidence (GIXD) measurement revealed that first few were subjected to compressive stress along b axis unit cell, resulting in expansion a- c-lattice constants. This...

Characteristic poly(<sc>l</sc>-lactide) absorption peaks were identified at 1.8, 4.0, 4.7, and 7.1 THz for an 80 °C crystallization temperature (<italic>T</italic>_c) sample; higher <italic>T</italic>_c resulted in a blue shift of the peak frequency.

Abstract We have explored a novel dry plasma process for the fabrication of electrodes on Nafion surfaces. Nanosized pillar structures were prepared through argon ion (Ar+) treatment. The shear strengths Au plasma-treated surfaces investigated. found that maximum strength (1.08 MPa) Au–Nafion was observed under optimal conditions (8 min, 100 W, 5 Pa, Ar+). Finally, we successfully strongly bonded surface treatment without using wet plating process.

Tungsten oxide (WO3) hydrate nanorods were synthesized by solvothermal process under different condition (170-210ºC, acetic acid (0-10 ml). The morphologies of WO3 investigated scanning electron microscopy (SEM) and X-ray diffraction (XRD). As the result, we found optimal synthesis nanorods. In this condition, treatment temperature was 190ºC with no in reactive solution. length diameter observed approximately 1-20 μm 50-1000 nm, respectively. XRD analysis revealed that crystal structure (WO3...

This paper describes the deposition of Nb doped vanadium dioxide (VO2) films on a glass substrate by metal organic decomposition (MOD) and their thermochromic properties. The difference in properties VO2 thin was investigated with without buffer layer Hf0.5Zr0.5O2 (HZO). phase transition temperature film successfully reduced from 83 to 43℃ HZO. Without HZO, deteriorated comparing HZO effectively suppresses miniaturization crystallite size due doping. Moreover, it would block out diffusion...