A5041918392- Advanced Thermoelectric Materials and Devices
- Chalcogenide Semiconductor Thin Films
- Heusler alloys: electronic and magnetic properties
- Thermal Expansion and Ionic Conductivity
- Transition Metal Oxide Nanomaterials
- Intermetallics and Advanced Alloy Properties
- 2D Materials and Applications
- Advanced battery technologies research
- Rare-earth and actinide compounds
- Thermodynamic and Structural Properties of Metals and Alloys
- nanoparticles nucleation surface interactions
- Quantum Dots Synthesis And Properties
- Electrocatalysts for Energy Conversion
- Thermal properties of materials
- Gas Sensing Nanomaterials and Sensors
- Advanced Semiconductor Detectors and Materials
- ZnO doping and properties
- Graphene research and applications
- Asian Geopolitics and Ethnography
- Thermal and Kinetic Analysis
- Phase-change materials and chalcogenides
- Perovskite Materials and Applications
- Thermal Radiation and Cooling Technologies
- Advanced ceramic materials synthesis
- Metallurgical and Alloy Processes
University of Houston
2014-2018
Harbin Institute of Technology
2017
Superconductor Technologies (United States)
2015
Exceptional Pt-like electrocatalytic activity was achieved in a sandwich-like catalyst of CoP/Ni<sub>5</sub>P<sub>4</sub>/CoP microsheet arrays for pH-universal hydrogen evolution through simply wrapping Ni<sub>5</sub>P<sub>4</sub> nanosheet CoP nanoparticles.
Iodine‐doped n‐type SnSe polycrystalline by melting and hot pressing is prepared. The prepared material anisotropic with a peak ZT of ≈0.8 at about 773 K measured along the direction. This first report on thermoelectric properties Sn chalcogenide alloys. With increasing content iodine, carrier concentration changed from 2.3 × 10 17 cm −3 (p‐type) to 5.0 15 (n‐type) then 2.0 (n‐type). decent mainly attributed intrinsically low thermal conductivity due high anharmonicity chemical bonds like...
Thermoelectric properties are heavily dependent on the carrier concentration, and therefore optimization of concentration plays a central role in achieving high thermoelectric performance.
Na doping improved both the peak and average ZT of p-type polycrystalline SnSe.
We report a peak dimensionless figure-of-merit (ZT) of ∼1 at 700 °C in nanostructured p-type Nb0.6Ti0.4FeSb0.95Sn0.05 composition. Even though the power factor composition is improved by 25%, comparison to previously reported Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2, ZT value not increased due higher thermal conductivity. However, led 15% increase output thermoelectric device made from previous best material Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2. The n-type used make unicouple Hf0.25Zr0.75NiSn0.99Sb0.01 with...
Owing to a large diamagnetism, graphene flakes can respond and be aligned magnetic field like ferromagnetic material. Aligned exhibit emergent properties approaching single-layer graphene. Anisotropic optical also give rise writing board using suspension bar magnet as pen. This simple alignment technique opens up enormous applications of As service our authors readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed may re-organized for...
Most of the recent work focused on improving dimensionless figure-of-merit, ZT, p-type skutterudites uses one or two fillers to tune electrical and thermal properties. Considering fact that different with varying atomic mass ionic radii can vibrate amplitudes scatter phonons mean free paths, we synthesized misch metal filled Mm0.9Fe4−xCoxSb12 (where Mm is La0.25Ce0.5Pr0.05Nd0.15Fe0.03, called metal). The samples were by hot pressing nano-powder made ball milling annealed ingot concentration...
Writing letters with a suspension of graphene flakes and magnet bar: the is initially opaque due to randomly oriented flakes, but magnet's field makes it transparent by aligning flakes. The graphene's diamagnetic anisotropic absorptive properties make this writing board possible, as shown in article 1604453 Z. M. Wang, J. Bao, co-workers.
The thermal conductivity across the metal-insulator transition (MIT) of hot-pressed polycrystalline vanadium dioxide (VO2) samples is studied. change in total (k) VO2 insignificant MIT temperature. By adding copper (Cu) to make (VO2)1-xCux composites with x from 0 0.5, we find an increase electrical 4 × 104 S m−1 1 106 at 120 °C, resulting electronic 0.38 W K−1 for = 3.8 0.3, which a significant increase. However, did not due decrease value Lorenz number by order magnitude than its standard...
An increase in thermal conductivity is achieved by increasing electronic conductivity<italic>via</italic>modulation doping, resulting from solid–solid phase transition.