A5012915946- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Radiation Effects in Electronics
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Radiation Detection and Scintillator Technologies
- VLSI and Analog Circuit Testing
- Quantum and electron transport phenomena
- Hepatitis C virus research
- Liver Disease Diagnosis and Treatment
- Nanowire Synthesis and Applications
- Ferroelectric and Negative Capacitance Devices
- Hepatitis B Virus Studies
- Low-power high-performance VLSI design
- Ion-surface interactions and analysis
- Silicon and Solar Cell Technologies
- Particle Detector Development and Performance
- Graphite, nuclear technology, radiation studies
- HIV-related health complications and treatments
- Nuclear reactor physics and engineering
- Electrostatic Discharge in Electronics
- Semiconductor materials and interfaces
- Nuclear Physics and Applications
- Microscopic Colitis
- Liver Disease and Transplantation
Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2016-2025
Ninewells Hospital
2024-2025
Centre National de la Recherche Scientifique
2010-2025
Aix-Marseille Université
2010-2025
Université de Rennes
2025
Assuta Medical Center
2024
Soroka Medical Center
2015-2023
Ben-Gurion University of the Negev
2014-2023
University Medical Center
2015-2020
University Hospital and Clinics
2015-2020
This paper reviews the status of research in modeling and simulation single-event effects (SEE) digital devices integrated circuits, with a special emphasis on current challenges concerning physical ultra-scaled (in deca-nanometer range) new device architectures (Silicon-on-insulator, multiple-gate, nanowire MOSFETs). After introducing classification terminology used this paper, we firstly present basis different transport models device-level (drift-diffusion, hydrodynamic, Monte-Carlo some...
Atmospheric radiation is today as important to IC reliability intrinsic failure modes. In non-critical consumer applications (cell phone, printer, gaming), a relatively high soft error rate (SER) often tolerable. contrast, similar would be deemed unacceptably in an arena where system reliability, accessibility, and serviceability are of paramount importance (networking, server, avionic, space), particularly human life or safety at risk (medical, automotive, transportation). Increasing number...
Abstract ITER is of key importance in the European fusion roadmap as it aims to prove scientific and technological feasibility a future energy source. The EUROfusion consortium labs within Europe contributing preparation exploitation operation aspires exploit outcomes view DEMO. paper provides an overview major progress obtained recently, carried out frame new (initiated 2021) work-package called ‘ Pr eparation I TER O peration’ (PrIO). directly supported by eleven PrIO contributions given...
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> We report real-time SER characterization of CMOS 65 nm SRAM memories in both altitude and underground environments. Neutron alpha-particle SERs are compared with data obtained from accelerated tests values previously measured for 130 technology. </para>
In this paper, Tri-Gate Nanowire (TGNW) FETs with high-k/metal gate are studied as an alternative way to planar devices for the future CMOS technological nodes (14 nm and beyond). The influence of Si film thickness (H) nanowire width (W) on electrical performances long- short-channel presented discussed. We show that transport properties in our TGNW fully governed by additive contributions (100) top surface (110) sidewalls. As compared wide devices, improvement electrostatic integrity (SS...
Background: Bacteriophages (phages) are viruses that infect and kill bacteria. The antimicrobial resistance crisis has driven renewed interest in phage therapy, including the use of phages to treat chronic orthopaedic infections. Methods: Here, we present results first three patients treated with therapy United Kingdom. Results: patient was May 2023 received active against Staphylococcus aureus. At nine months follow-up, patient’s wound remained healed, C-reactive protein normal walking...
Semiconductors characterized by ultrawide bandgaps (UWBGs), exceeding the SiC bandgap of 3.2 eV and GaN 3.4 eV, are currently under focus for applications in high-power radio-frequency (RF) electronics, as well deep-ultraviolet optoelectronics extreme environmental conditions. These semiconductors offer numerous advantages, such a high breakdown field, exceptional thermal stability, minimized power losses. This study used numerical simulation to investigate, at material level,...
A synthesis of the most frequent transient phenomena due to floating-body effects in partially depleted SOI MOSFET's is presented. The dominant physical mechanisms are examined through a variety experiments. Comprehensive models which predict included SOISPICE. Simulated transients involving both generation and recombination fully validated by experiments shown he useful for reliable carrier lifetime extraction as well circuit simulation.
The interactions of thermal and low energy ( <;1 MeV) neutrons with natural boron-doped silicon has been investigated using Geant4 numerical simulations. consequences these on the soft-error rate 40 nm SRAM at ground level have carefully analyzed quantified from neutron accelerated tests LLB facility, real-time altitude measurements ASTEP platform simulation a new version TIARA Monte-Carlo code (TIARA-G4) capable taking into account more accurate description geometry true isotopic...
Utilizing the SON (silicon on nothing) process, highly performant double gate devices have been processed in a planar configuration. Two families of were obtained (high performance and low power) with very high Ion/Ioff trade off. Drive currents 1954 /spl mu/A//spl mu/m (Ioff = 283 nA//spl mu/m) 1333 1 are at 1.2 V Tox 20 Aring/ Lgate 70 nm. DIBL is well controlled, measured below 60 mV for gates as short 40 These features place our among most ever reported.
Scalability of both unstrained and strained FDSOI CMOSFETs is explored for the first time down to 2.5 nm film thickness 18 gate length with HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /TiN stack. Off-state currents in pA/mum range are achieved short 3.8nm thin MOSFETs thanks outstanding electrostatic control: 67 mV/dec subthreshold swing 75 mV/V DIBL. For such bodies, buried oxide fringing field limitation on DIBL experimentally...
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> Using a new extraction methodology taking into account multisubband population and carrier degeneracy, we have experimentally determined backscattering coefficients, ballistic ratios, injection velocities of n- p-FDSOI devices with gate lengths down to 30 nm in the saturated and, for first time, linear regimes. The evolution these quasi-ballistic parameters is examined as function inversion...
A new fully experimental method to determine the backscattering coefficient and ballistic ratio of n- p-FDSOI multigate nanodevices is proposed in this paper. This technique first one that takes multisubband population, carrier degeneracy, short channel effects into account. Owing self-consistent Poisson-Schrodinger simulations, common assumptions such as subband occupied by carriers are investigated. For time, universal abaci, which functional whatever architecture dimensions gate/substrate...
The bipolar amplification and charge collection in Junctionless Double-Gate MOSFETs (JL-DGFET) submitted to heavy-ion irradiation are investigated. transient response of JL-DGFET is compared that conventional devices operating inversion-mode (IM-DGFET). We show the higher junctionless than mainly due doping levels channel which induce larger floating body effects.
This work reports the real-time Soft-Error Rate (SER) characterization of more than 7 Gbit SRAM circuits manufactured in 40 nm CMOS technology and subjected to natural radiation (atmospheric neutrons). experiment has been conducted since March 2011 at mountain altitude (2552 m elevation) on ASTEP Platform. The first experimental results, cumulated over 7,500 h operation, are analyzed terms single bit upset, multiple cell upsets, physical bitmap convergence SER. comparison data with Monte...