A5082220029- Radiation Effects in Electronics
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Particle Detector Development and Performance
- Integrated Circuits and Semiconductor Failure Analysis
- Magnetic confinement fusion research
- Fusion materials and technologies
- Nuclear reactor physics and engineering
- Particle physics theoretical and experimental studies
- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- High-Energy Particle Collisions Research
- Advanced Photonic Communication Systems
- Parallel Computing and Optimization Techniques
- Laser-Plasma Interactions and Diagnostics
- Ion-surface interactions and analysis
- Radiation Detection and Scintillator Technologies
- Nuclear Physics and Applications
- Semiconductor Quantum Structures and Devices
- Innovation Diffusion and Forecasting
- Technology Assessment and Management
- Graphite, nuclear technology, radiation studies
- Advanced Data Storage Technologies
- CCD and CMOS Imaging Sensors
- Particle accelerators and beam dynamics
CEA Cadarache
2024-2025
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
1992-2025
European Organization for Nuclear Research
2024
Institut de Recherche sur la Fusion par Confinement Magnétique
2024
ITER
2008-2022
CEA Paris-Saclay
1992-2008
Culham Science Centre
2007
CEA Grenoble
2002
DSM (Netherlands)
1993
Technicolor (France)
1989-1990
A theoretical study and a model for the numerical simulation of nonlinear electrical response, including harmonic-generation rate calculation, p-i-n InGaAs photodiode under high-illumination conditions are discussed. The device structure is described. An algorithm, which based on finite-difference used to calculate temporal response microwave optical input signal. different harmonics in power spectrum obtained using fast Fourier transform (FFT) calculation. This tool designing determining...
Abstract ITER is of key importance in the European fusion roadmap as it aims to prove scientific and technological feasibility a future energy source. The EUROfusion consortium labs within Europe contributing preparation exploitation operation aspires exploit outcomes view DEMO. paper provides an overview major progress obtained recently, carried out frame new (initiated 2021) work-package called ‘ Pr eparation I TER O peration’ (PrIO). directly supported by eleven PrIO contributions given...
The next generation of large scale fusion devices—ITER/LMJ/NIF—will require diagnostic components to operate in environments far more severe than those encountered present facilities. This harsh environment is the result high fluxes neutrons, gamma rays, energetic ions, electromagnetic radiation, and some cases, debris shrapnel, at levels several orders magnitude higher experienced today’s devices. similarities dissimilarities between environmental effects on for inertial confinement...
The authors present results obtained on a rad-hard mixed analog-digital technology that integrates monolithically complementary MOS (CMOS) transistors, junction FETs (CJFETs), and bipolar transistors (C-bipolars). This is expected to satisfy the hard constraints of Large Hadron Collider (LHC) detector electronics. These three families have been chosen offer large flexibility design. provide electrical characteristics close those modern BiCMOS technologies will allow design same chip both...
High Energy Physics experiments under preparation at CERN (Geneva, Switzerland) with the future LHC (Large Hadron collider) require a fast, low noise, very rad-hard, mixed analog-digital microelectronics VLSI technology. Readout electronics designed using such technology for central parts of particle detectors must withstand more than 10 Mrad (SiO/sub 2/) and 10/sup 14/ neutrons/cm/sup 2/ over years operation. We present here recent results obtained new rad-hard called DMILL, which...
We conducted a real-time soft-error rate characterization of CMOS bulk 65-nm static random access memories (SRAMs) subjected to fusion neutrons during deuterium–deuterium (D-D) plasma operation at W–tungsten–Environment in Steady-state Tokamak (WEST). The test equipment, installed the experimental hall several locations tokamak, was irradiated machine shots by flux particles dominated primary 2.45-MeV neutrons. Real-time neutron metrology, spectrometry, complementary with monoenergetic...
We have performed real-time soft error rate (SER) measurements on bulk 65 nm static random-access memories (SRAMs) during deuterium–deuterium (D-D) plasma operation at W–tungsten– Environment in Steady-state Tokamak (WEST). The present measurement campaign was characterized by the production of several tens long pulse discharges (~60 s) and a total neutron fluence (at level circuits under test) up to ~10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
We present experimental results from a fast charge amplifier and wideband analog buffer processed in the DMILL BiCMOS-JFET radhard SOI technology irradiated up to 4.5/spl times/10/sup 14/ protons/cm/sup 2/. In parallel, we have elementary transistors. These components were biased electrical measurements done 30 min after beam stop. By evaluating variations of main SPICE parameters, i.e., threshold voltage shift for CMOS current gain variation bipolar transistors, simulated at different...
DMILL technology integrates mixed analog-digital very rad-hard (>10 Mrad and >10/sup 14/ neutron/cm/sup 2/) vertical bipolar, 0.8 /spl mu/m CMOS 1.2 PJFET transistors on SOI substrate. In this paper, after a presentation of the program goal, we discuss in more detail main technological choices, milestones from R&D to industrial implementation, results obtained stabilization final process-flow MHS foundry.
We report on the radiation response of a novel p-type photogate pixel. Sensors are exposed to gamma rays, and fusion neutrons during deuterium plasma operation at W–Tungsten–Environment in Steady-state Tokamak (WEST), showing dark current increase with total dose.
Investigations of test circuit parameters in a mixed analog-digital technology (including CMOS, PJFET and NPN) are presented. The changes electrical as function the level radiation up to 10 Mrad(SiO/sub 2/) 3.8 10/sup 14/ neutrons/cm/sup 2/ reported. Analysis pertains hardness limiting mechanism identification.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
A hardened and mixed analog-digital technology under development is presented. This currently includes a PJFET with good hardness CMOS transistors potential multi-megarad hardness. First tests of bipolar not yet optimized structure (structure the JFET) are discussed. The feasibility 1.2- mu m-thick active layer on top SIMOX wafer very immunity to radiation has been shown. highly doped buried successfully introduced into process, even if some spreading that must be taken account adjust...
Presents a hardened and mixed analog-digital technology under development. This now includes PJFET with quite good hardness, CMOS transistors potential multi-megarad hardness first tests of bipolar not yet optimized structure (structure the JFET). All results achieved so far, together optimizations way will lead to an analog digital capability high level (neutron fluence, cumulated dose, immunity upsets) address needs military applications electronics for elementary particles physics...
We validated a method for predicting the Soft Error Rate (SER) in WEST tokamak operated with deuterium plasmas, and we applied it to predict SER ITER deuterium-tritium plasmas.
Since July 2010 the ITER project is in construction phase, yet a number of design activities are still to be completed. The management these tasks, coordination work Parties, resolution interface issues and control configuration thus main responsibilities Organization (IO) current phase. paper analyses challenges posed by specific technical organizational features integration procurement, presents processes that have been deployed deal with them.
We have investigated the response of MOS transistors fabricated using DMILL process and irradiated to a total dose 1MGy(Si)/sup 1/ with /sup 60/Co source. Results show that parameter shifts remain limited, thus authorizing use this technology in environments involving very high levels radiation.