A5043845686- Graphene research and applications
- 2D Materials and Applications
- MXene and MAX Phase Materials
- Surface and Thin Film Phenomena
- Nanowire Synthesis and Applications
- Physics of Superconductivity and Magnetism
- Topological Materials and Phenomena
- Advanced Chemical Physics Studies
- Boron and Carbon Nanomaterials Research
- nanoparticles nucleation surface interactions
- Catalytic Processes in Materials Science
- Ga2O3 and related materials
- Magnetic and transport properties of perovskites and related materials
- Semiconductor materials and interfaces
- Carbon Nanotubes in Composites
- Fullerene Chemistry and Applications
- Electronic and Structural Properties of Oxides
- Advanced Thermoelectric Materials and Devices
- Electrocatalysts for Energy Conversion
- Molecular Junctions and Nanostructures
- Iron oxide chemistry and applications
- Iron-based superconductors research
- Semiconductor materials and devices
- Inorganic Chemistry and Materials
- Thermal properties of materials
Zhejiang International Studies University
2024-2025
Beihang University
2023-2025
Shanghai Jiao Tong University
2022
Nanjing University of Science and Technology
2019-2020
Shanghai Institute of Microsystem and Information Technology
2018
Chinese Academy of Sciences
2018
Abstract Lateral graphene p–n junctions are important since they constitute the core components in a variety of electronic/photonic systems. However, formation lateral with controllable doping levels is still great challenge due to monolayer feature graphene. Herein, by performing selective ion implantation and situ growth dynamic chemical vapor deposition, direct seamless spatial control tunable demonstrated. Uniform lattice substitution heteroatoms achieved both boron-doped nitrogen-doped...
Chemical vapour deposition (CVD) in a tube furnace and molecular beam epitaxy (MBE) vacuum chamber represent the most effective methods for production of low-dimensional nanomaterials.
Low‐dimensional nanomaterials exhibit unique physical and chemical characteristics due to their small scale specific structures, positioning them as potential candidates for advancing Moore's Law. While most low‐dimensional are n‐type, the progress in creating p‐type semiconductors continues pose a challenge. Tellurium, Group VI element, serves semiconductor characterized by one‐dimensional chiral atomic structure, showcasing significant next‐generation electronic devices. Since synthesis of...
Abstract 1D semiconductors with atomically precise edge and well‐controlled width hold significant promise as channel materials for next‐generation electronics. Here a method to fabricate the narrowest zigzag‐edged bismuth phosphide (BiP) nanoribbons (NRs) is presented, achieving widths of three atoms (≈0.7 nm), through molecular beam epitaxy on bismuthene in wide P coverage range. Using scanning tunneling microscopy first‐principles calculations, it revealed that these BiP NRs exhibit...
Abstract Combinations of phosphorus with main group III, IV, and V elements are theoretically predicted to generate 2D binary phosphides extraordinary properties promising applications. However, experimental synthesis is significantly lacking. Here, a general approach for preparing reported using single crystalline surfaces containing the constituent element target materials as substrate. To validate this, SnP 3 BiP, representing typical phosphides, successfully synthesized on Cu 2 Sn...
Abstract Formation of exotic topological states on technologically important semiconductor substrate is significant from the aspects both fundamental research and practical implementation. Here, we demonstrate one-dimensional (1D) phase tunable soliton in atomic nanolines self-assembled Si(001) surface. By first-principles calculations tight-binding modeling, reveal that Bi provide an ideal system to realize a multi-orbital Su–Schrieffer–Heeger (SSH) model, electronic properties can be...
The ternary chalcogenide superconductor ${\mathrm{Bi}}_{2}{\mathrm{Rh}}_{3}{\mathrm{Se}}_{2}$ was discovered to have charge density wave (CDW) order and electron-phonon coupling (EPC). However, it is still debated whether the phase transition at $\ensuremath{\sim}240\phantom{\rule{4pt}{0ex}}\mathrm{K}$ a CDW one. Here, we systematically performed Raman scattering investigations on single-crystal ${\mathrm{Bi}}_{2}{\mathrm{Rh}}_{3}{\mathrm{Se}}_{2}$. Angle-resolved polarized spectroscopic...
Monolayer iron oxides grown on metal substrates have widely been used as model systems in heterogeneous catalysis. By means of ambient-pressure scanning tunneling microscopy (AP-STM), we studied the situ oxidation and reduction FeO(111) Au(111) by oxygen (O2) carbon monoxide (CO), respectively. Oxygen dislocation lines present FeO islands are highly active for O2 dissociation. X-ray photoelectron spectroscopy measurements distinctly reveal reversible after sequential exposure to CO. Our...
One-dimensional (1D) zigzag tellurium (Te) wires on an alloyed Cu2Sb (111) surface are produced and characterized by combining molecular beam epitaxy high-resolution scanning tunneling microscopy, respectively. These 1D Te with shapes exhibit a uniform width well-defined periodicity grown in registry substrate. Density functional theory (DFT) calculations revealed remarkable bandgap of 0.3 eV induced spin–orbit coupling. Interestingly, the resulting became metallic substrate, as confirmed...
Black arsenic (b-As) with extreme in-plane anisotropy, incredible ambient stability, and excellent transport performance has unlimited potential for device applications. Uncovering phonon–phonon (ph–ph) interactions is a critical step in understanding its transport, especially thermal properties. Here, we report on the phonon anharmonicity an exfoliated b-As flake using temperature-dependent polarized Raman spectroscopy from 80 to 300 K. Polarization of Ag2 mode helps identifying crystalline...
Effective functional intercalation and facile structural manipulation of fullerene crystals could be achieved by ferrocene-modified based on the liquid–liquid interfacial precipitation process.
Abstract Two‐dimensional (2D) material epitaxially grown on a metal substrate with precise lattice registry and strong bonding can result in substantial strain within both the 2D layer surface. In turn, energy has pronounced influence morphology physical properties of epitaxial films. Here, through comprehensive approach by combining scanning tunneling microscopy atomistic simulations, it is demonstrated that monolayer ultraflat blue phosphorene (blueP) topmost Cu(111) are perfect atomic...
Abstract Formation of exotic topological states on technologically important semiconductor substrate is significant from the aspects both fundamental research and practical implementation. Here, we demonstrate one-dimensional (1D) phase tunable soliton in atomic nanolines self-assembled Si(001) surface. By first-principles calculations tight-binding modeling, reveal that Bi provide an ideal system to realize a multi-orbital Su–Schrieffer–Heeger (SSH) model, electronic properties can be...