GaSb-based type-I quantum-well diode lasers emitting at 3.36μm 12°C with 15mW of continuous wave output power are reported. Devices two or four InGaAsSb compressively strained quantum wells and AlInGaAsSb quinternary barriers were fabricated characterized. It was shown that increase in the number led to improved laser differential gain reduced threshold current.

We propose a novel method to control the frequency of semiconductor lasers. The new technique allows fabricating three-terminal lasers with fast tuning and possibility implement intrinsically linearization laser sweep. electrical contact located between lower undoped cladding waveguide together upper enable pumping for optical gain. A voltage applied same under induces space charge limited current (SCLC) across cladding. Electrons driven into this layer create charge. affects refractive...

Abstract The electronic properties of unstrained unrelaxed InAs x Sb 1− alloys have been determined in a wide range alloy compositions using IR magnetospectroscopy, magnetotransport and photoluminescence. All studied n-type background doping with electron concentration decreasing the content. composition dependence follows an empirical exponential law compositions. Both bandgap effective mass on exhibit negative bowing reaching lowest values at = 0.63: E g 0.10 eV, m * 0.0082 0 4.2 K....

Cascade GaSb-based type-I quantum well diode lasers were designed and fabricated. pumping was achieved utilizing efficient interband tunneling through "leaky" window in band alignment at GaSb/InAs heterointerface. The carrier recycling between stages confirmed by twofold increase of the slope efficiency two-stage devices as compared to reference single-stage lasers. Moderate internal optical loss observed cascade with injector located near mode peak. scheme increased continuous wave output...

Realizing a large Land\'{e} $g$-factor of electrons in solid-state materials has long been thought as rewarding task it can trigger abundant immediate applications spintronics and quantum computing. Here, by using metamorphic InAsSb/InSb superlattices (SLs), we demonstrate an unprecedented high value $g\approx 104$, twice larger than that bulk InSb, fully spin-polarized states at low magnetic fields. In addition, show the be tuned on demand from 20 to 110 via varying SL period. The key...

Mid-IR (λ≈3–3.5 μm) light emitting diodes with quinternary AlInGaAsSb barriers and InGaAsSb strained quantum wells grown on GaSb substrates have been demonstrated. The devices produced a quasi-cw emission power of 0.7 mW at room temperature 2.5 T=80 K.

Quasiparticles with Dirac-type dispersion can be observed in nearly gapless bulk semiconductors alloys which the bandgap is controlled through material composition. We demonstrate that Dirac realized short-period InAs1–xSbx/InAs1–ySby metamorphic superlattices tuned to zero by adjusting superlattice period and layer strain. The new has anisotropic carrier dispersion: energy associated in-plane motion proportional wave vector characterized Fermi velocity vF, corresponding growth direction...

The unintentional background electron population and associated interface surface conductivity in a heterostructure of InAs0.58Sb0.42 with bandgap 0.144 eV AlInSb was studied multi-carrier Hall-effect analysis. A free bulk concentration at 77 K found density 2.4 × 1015 cm−3and mobility 140 000 cm2 V−1 s−1. accumulation layer observed 5.5 1011 cm−2 4500 s−1 that is consistent predictions Fermi level pinning. Another identified the 4 37 origin defects implications for device structures are discussed.

The design and fabrication of metamorphic periodic heterostructures containing InAsSb layers with controllable modulated Sb composition well‐regulated band alignments are reported. bandgap energy ordered alloy can be much smaller than that in bulk any content. modulation period is determined by the thicknesses strain compensated x /InAsSb y pairs grown on a virtual GaIn z substrate given lattice constant. experiment shows deviation from ∼2.3 to ∼5.5 nm leads shift maximum 20 K...

Operation principles and designs of rapidly tunable quantum cascade lasers (QCL) were analyzed theoretically experimentally. Theoretical analysis shows that by adding a special polarization transition with controllable intensity or energy to existing QCL designs, one can achieve emission frequency modulation Δυ ≈ 30 GHz for the carrier wavelength 10 μm, while introducing additional optical losses not more than cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...

Band gap is known as an effective parameter for tuning the Land\'e $g$ factor in semiconductors and can be manipulated a wide range through bowing effect ternary alloys. In this work, using recently developed virtual substrate technique, high-quality InAsSb alloys throughout whole Sb composition are fabricated large of $g\ensuremath{\approx}\ensuremath{-}90$ at minimum band $\ensuremath{\sim}0.1$ eV, which almost twice that bulk InSb, found. Further analysis to zero limit reveals possible...

Cyclotron-resonance (CR) experiments have been performed on InAs/GaSb/AlSb double structures, in which electron and hole layers are separated by AlSb barriers. The strength of the electron-hole coupling is altered varying barrier width. Our data reveal that properties InAs/GaSb systems with barriers thinner than 1.5 nm entirely determined interlayer tunneling CR features such samples can be explained hybridization between states InAs conduction band GaSb valence band.

We have designed and developed dual wavelength type I quantum well light emitting diodes (LEDs) operating at 2 μm 3–3.4 wavelengths with independently controlled intensities. The room temperature quasicontinuous wave output power was 2.8 mW 0.14 3 μm. design of the structure allows for monolithically integrating LED pixels different opening way fabrication multiwavelength arrays multispectral hyperspectral imaging applications.

Laser diodes based on AlInGaAsSb/InGaAsSb heterostructures with different waveguide widths were designed and fabricated. The decrease in the width from 1470 to 470 nm led improvement of device performance. Lasers quinternary waveguides demonstrated 200 mW continuous wave output power at room temperature.

In plane and growth direction electron effective mass in short period InAs/GaSb semiconductor superlattices (SL) was measured using cyclotron resonance at different orientations of magnetic field with respect to SL direction. It demonstrated that the spectrum near bottom subband has 3D character, in-plane masses ranging from 0.023 m0 0.028 0.03–0.034 depending on conditions. The are close those calculated weak coupling limit Kronig-Penney model. this is a weighted average corresponding bulk...

An interband cascade laser design has been grown by molecular beam epitaxy using uncracked arsenic and antimony sources. Lasers were fabricated into both broad-area narrow-ridge devices, with cavity lengths ranging between 1 mm 4 mm. At 300K, under low-duty-cycle pulsed conditions, threshold current densities for lasers 2-mm are as low 395 A/cm², optical emission centered at a wavelength of ~3.82 &mu;m 300 K. Continuous-wave (cw) performance the devices achieved temperatures up to...

Mid-infrared light emitting diodes based on cascade pumping of the type-I quantum wells were designed and fabricated. The 500-μm-diameter mesa ten-stage devices emitted more than 2 mW continuous wave power in a wide spectrum peaking at 3.1 μm room temperature. More 6 was obtained 77 K. above-mentioned output levels measured from an uncoated window substrate-side contact metallization epi-side-down mounted emitters. maximum device operating voltage are roughly scaled with number cascades...

Gain in broad-area midinfrared diode “W” lasers (λ=3–3.1 μm) has been measured using lateral mode spatial filtering combined with the Hakki–Paoli approach. The internal optical loss of ≈19 cm−1 determined from gain spectra was same for devices either ten or five period active regions and nearly constant temperature range between 80 160 K. Analysis differential spontaneous emission shows that main contribution to dependence threshold current is Auger recombination, which dominates within...

GaSb-based type I InGaAsSb quantum well mid-infrared (mid-IR) light-emitting diodes (LEDs) operated at wavelengths up to 3.66 µm are demonstrated. The application of quinternary AlGaInAsSb barriers improved hole confinement in the wells and enabled an LED radiant excitance 1.3 W cm−2 (λ = µm) 100 K which corresponds emittance a blackbody 1350 K. High-contrast individually addressed 512 × arrays were designed fabricated using wet etching. An accurate characterization technique for mid-IR LEDs...

Cascade GaSb-based type-I quantum well diode lasers were designed and fabricated. pumping was achieved utilizing efficient interband tunneling through "leaky" window in band alignment at GaSb/InAs heterointerface. The 100% carrier recycling between stages confirmed by twofold increase lightcurrent characteristics slope of two-stage 2.4 – 3.3 μm cascade as compared to reference single-stage devices. Moderate internal optical loss observed with injector located near the mode peak. scheme...

We have studied the time evolution of far-infrared photoresponse two-dimensional electron systems in quantum Hall (QH) regime. identified different contributions to by using sample geometries and changing direction magnetic field. In general, we found a fast response (microseconds) related photoinduced currents, longer times (up some hundreds milliseconds) longitudinal resistance. Both types are present bolometric bound flanks QH plateau, cyclotron resonance signal photon energy probe...

We discuss an ultrawide, voltage-tunable type-II mid-IR interband cascade laser. Its design has a charge accumulation layers outside of the optically active quantum wells that unclamps electron-hole concentrations and facilitates above-threshold Stark shifts. Our results demonstrate laser tuning 120nm (120cm−1).

We demonstrate rapid tuning of the emission frequency a room-temperature mid-infrared quantum cascade laser by external optical pumping. Emission over 0.3 cm−1 (10 GHz) has been achieved for λ = 9 μm device generation electron-hole pairs along entire length stripe. Measurements indicate that this approach allows broadband frequency-modulation lasers at above 300 MHz modulation frequencies.

In this study, we investigated experimentally the dependency of radio frequency (rf) absorption by gold nanoparticles (AuNPs) on (10 kHz to 450 MHz), NP size (3.5, 17, and 36 nm), charge ligand shell (positive amino negative carboxylic functional groups), aggregation state, presence electrolytes (0-1 M NaCl). addition, examined effect protein corona rf AuNPs. For first time, energy AuNPs was analyzed in 10 MHz range. We have demonstrated that previously reported heating can be solely...

InAsSb is the only direct-bandgap III–V compound semiconductor alloy that absorbs and emits light over entire long-wavelength infrared band (8–12 micron). We measured its free electron concentration mobility as a function of temperature in materials with 77 K-bandgap 0.11 eV compared results those II–VI compound, HgCdTe. The intrinsic exhibits an expected freeze-out, which can be described Fermi statistical hole distributions, taking into account non-parabolicity conduction dependence...