Abstract The article presents the materials of study on bull cross Bredy meat type simmentals, which include genotyping animals for CAST and CAPN1 genes with identification frequencies genotype alleles, as well testing production these expressed in evaluation aged within 8 days indicators tenderness, juiciness, organoleptic assessment taste. results studies did not confirm, certainty, influence gene polymorphism beef tenderness indicators, no associations this studied juiciness taste while...

Theoretical analyses have been performed of the quantum-size (QS) resonance tunneling in field-emission (FE) phenomenon for different models emitting structures. Such experimentally observed peculiarities considered as enhancement FE current, deviation from Fowler-Nordheim law, appearance sharp current peaks, and a negative resistance. Different types cathodes with QS structures (quantized layers, wires, or dots) studied experimentally. Resonance peaks observed, which values energy-level...

Abstract The electroreflection spectra of hexagonal polytypes SiC, 4H and 6H are measured in the range 1.0 to 5.6 eV. energies direct optical transitions determined using a multiple oscillator model. electronic band structures three SiC (2H, 4H, 6H) calculated by first‐principles self‐consistent linear muffin‐tin orbital (LMTO ASA) method. One‐electron densities states obtained ± 15 eV around top valence band. results compared with experimental data this work those available literature.

The kinetics of phase separation and growth Si precipitates during high-temperature annealing nonstoichiometric SiOx films is theoretically studied. mechanisms silicon diffusion capture by as well oxygen emission out from the precipitate interface toward oxide bulk are compared. experimental within 1s at 1000°C can be explained latter mechanism involving either neutral or negatively charged atoms. maximum values activation energy estimated to match simulation results data.

Abstract The possibility of high frequency electromagnetic wave generation by field emission based devices has great interest. wide bandgap materials GaN and AlGaN are very promising for these applications due to low electron affinity the existence satellite valleys in conduction band. results investigations peculiarities from nanostructured surfaces presented. Multilayer structures with various levels layer doping on sapphire bulk substrates were used as initial wafers. surface upper layers...

Computer simulation studies of the properties some novel types field emitters have been carried out in framework theory quantum disc effects. The following cases analyzed detail. (1) Emission from surface states (SS) exhibiting both discrete and continuous energy spectra. This case resembles known effect work-function deterioration ΔW∼(Ec−ESS), yet, here, prior to emission into vacuum, SS electrons must be excited conductivity band via Pool–Frenkel mechanism: ne≂C exp(aEs1/2/kT), or other....

A sharp increase of the emission current at high electric fields and a decrease threshold voltage after pre-breakdown conditioning diamond-like carbon (DLC) films have been measured. This effect was observed for DLC-coated silicon tips GaAs wedges. During electron field (EFE) energy barriers caused by an sp3 phase between sp2 inclusions can be broken, resulting in formation conducting nanochannels semiconductor–DLC interface surface DLC film. At densities local heating, transforms into...

The influence of different types covering on electron field emission from silicon tips has been studied. For this a series tip array structures, namely (i) structures with porous layers the tops tips, (ii) covered carbon films, (iii) implanted by hydrogen, and (iv) cesium-enriched prepared investigated. comparison characterization various using effective work functions, enhancement factors, areas obtained Fowler - Nordheim plots have performed. Models mechanisms proposed.

GaN field emitter rods with nanometer diameter were fabricated by photoelectrochemical etching on a n+-GaN substrate. Their electron emission properties investigated under ultraviolet (UV) illumination. The Fowler–Nordheim plots of the current show different slopes for nonilluminated and UV illuminated devices. A model based from valleys having specific affinities is proposed to explain experimental results. In absence illumination, are almost fully depleted takes place only lower valley....

Silicon field emitter arrays have been fabricated and investigated. Four different emission enhancement layers were studied: (1) porous silicon layers, (2) carbon films, (3) hydrogen implanted (4) Cs-enriched layers. Scanning electron microscopy was used to study the morphology of tips. Comparison above accomplished by obtaining effective work functions, factors, areas from Fowler–Nordheim plots.

The peculiarities of electron field emission from nanostructured GaN surface have been investigated. current–voltage characteristics current in Fowler–Nordheim plot show two parts with different slopes. There are oscillations the changing slope region. As an explanation for experimental results a model based on electron-emission analysis lower (Γ) valley, upper (U) and transition between valleys due to heating electric has proposed. affinities Γ U determined. decreased there estimated...

Electron field emission phenomena from semiconductors (and, in particular, wide band gap materials) are analyzed theoretically for the general case, i.e., by taking into consideration aspects that have not been considered earlier such as two (or more) valleys of energy structure, nondegenerated statistics free electrons, heating conduction intervalley carrier redistribution under applied electrical fields, size quantization electron spectra, and change characteristics. Comparisons with...

A new type of field emission resonant tunneling diode has been proposed and investigated both theoretically experimentally. The is based on an Si–SiOx–Si multilayer cathode containing SiOx layer as the input potential barrier, Si quantum well, a vacuum output barrier double structure. calculation predicted existence maxima (three or four depending height) current density–electric dependencies. Frequency dependencies microwave impedance pointed to negative conductance resulting from through...

The peculiarities of electron field and photon-assisted emission from GaN nanorods are presented here. Well-aligned field-emitter rods with nanometer-scale diameter were processed on a wafer n+-GaN top active layer n+-Si substrate by plasma photoelectrochemical etching. current-voltage characteristics current in Fowler–Nordheim (FN) plots show different slopes for the initial device wavelengths illuminated devices. At electron-field GaN, as rule, curves two (lower at low voltage higher high...