This brief explores the design space for realizable solution of a broadband class-B/J continuous mode power amplifier (PA). The PA is initially designed at current-source reference plane with correct voltage and current waveforms. intrinsic impedances are then projected to package using model-based nonlinear-embedding technique. An insight provided into engineering extrinsic harmonic impedance rotate clockwise on Smith chart be able match it Foster circuit. It concluded that decreasing...

We present an analytical dc model for the MODFET that offers several improvements over existing models. An enhanced version of makes use a new approximation two-dimensional electron gas (2DEG) concentration versus gate-to-channel voltage, which models both subthreshold region and gradual saturation carriers due to onset AlGaAs charge modulation. Even in this more accurate there are no complicated numerical calculations involved; at most what is required finding single root function one...

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <?Pub Dtl=""?>This paper presents a frequency-selective RF vector predistortion linearization system for multicarrier power amplifiers (PAs) affected by strong differential memory effects. Differential effects can be revealed in two-tone experiment the divergence increasing tone-spacing of Volterra coefficients associated with lower and upper intermodulations tones. Using large-signal measurement...

Power amplifier (PA) behavior is inextricably linked to the characteristics of transistors underlying PA design. All exhibit some degree memory effects, which must therefore be taken into account in modeling and design these PAs. In this paper, we will present new trends for characterization, device modeling, behavioral power amplifiers with strong effects. First impact thermal electrical effects upon performance a transistor revealed by comparing continuous wave pulsed RF large-signal...

In this paper, a full-duplex transceiver with two-stage analog interference cancellation architecture is proposed for the prevailing wireless communication, which enables simultaneous transmission and reception on same frequency. This jointly combines structures of two typical self-interference (SI) approaches, i.e., radio frequency (RF)-tapping baseband-tapping mitigates SI signal in steps to provide an improved performance reduced restrictions RF components required build architecture. The...

A fully model-based nonlinear embedding device model including low- and high-frequency dispersion effects is implemented for the Angelov successfully demonstrated load modulation power-amplifier (PA) applications. Using this model, any desired PA mode of operation at current source plane can be projected to external reference planes synthesize required multi-harmonic terminations. 2-D identification intrinsic modes performed first planes. For defined without lossy parasitics, most impedance...

This letter investigates the design space for feasible load impedances of broadband continuous class-F power amplifier (PA) using nonlinear embedding transfer function. can overcome limitation anticlockwise trajectory second-harmonic impedance on Smith chart. The approach starts with at intrinsic plane based generic representation drain voltage and current waveforms. Nonlinear network is then used to project loads package plane. proposed strategy verified implementation a 15-W GaN HEMT-based...

With the explosive growth of smartphone and tablet markets, wide bandwidth voice data communication have become ubiquitous. Users expect to use their wireless portable phone/computing devices at any place time. Furthermore, with today's economy scale, yesterday's high-performance are entry-model devices.

This paper presents a new architecture for the frequency-selective digital predistortion (DPD) two- and three-band power amplifier (PA) linearization. Also, largely spaced-signal DPD using intermediate frequency (IF) technique is demonstrated. The algorithm used accounts differential memory effects up to fifth order bands that can be arbitrarily spaced. simulation experimental studies are performed various signal sets; multitone signals with tone spacing, band separation, complementary...

A novel procedure is introduced for designing Doherty amplifiers using the model-based nonlinear-embedding technique. First, intrinsic load-matching network designed at transistor current-source reference plane with main and auxiliary devices interconnected. Identical different biasing are used realizing an asymmetric implementation 9-dB back-off. The required multiharmonic impedances package planes then obtained embedding device model both devices, complex load impedance fundamental...

A new design methodology providing optimal mixed-mode operation for dual-input class-F outphasing Chireix amplifiers is presented. The starts with single-transistor simulations at the intrinsic I-V reference planes to directly select peak and backoff resistive loads R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">min</sub> xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> input RF gate drives yielding best combination of efficiencies output...

An analytic theory for dual-input outphasing power amplifiers that incorporate in one unified treatment, the continuum of solutions combining including Doherty and Chireix modes is presented. This developed at current-source reference planes reveals performance trade-off achieved by all possible amplifier (PA) combiners within solutions. Furthermore, it identifies a novel type hybrid Chireix-Doherty PA combines key features operations such fundamental drain voltages applied to both main...

A concurrent dual-band digital predistortion (DPD) system is presented to compensate for the nonlinearity of radio-frequency power amplifiers (PAs) driven by a signal. Recently, closed-form orthogonal polynomial basis has been introduced showing stability improvement compared with conventional polynomial. An experimental test bed employing field-programmable gate array (FPGA) linked two mixed-signal boards also presented. Based on FPGA, this paper focuses hardware implementation new DPD...

This paper presents and compares two types of 2-D cubic-spline (2-D-CS) digital predistorters for linearizing a power amplifier (PA), which is used in dual-band transmitters. In the conventional 2-D-CS representation, gain functions must be first extracted using an alternate basis, whereas proposed least-squares (2-D-LSCS) approach, new basis introduced such that weights can directly from measured data method. The are calculated 1-D to reduce signal-processing resource usage real-time...

A new type of wideband dual-input hybrid Doherty outphasing power amplifier (HDO-PA) is developed in which the load-modulation scheme continuously converts as frequency increase, from previously reported HDO-PA mode with maximum flat efficiency response versus to conventional PA mode. For a symmetric implementation, this corresponds peak-to-backoff fundamental voltage ratio auxiliary linearly varying 9/7 2 frequency. transmission-line-based prototype first established at current-source...

An analysis of the degradation 1- mu m-gate-length nMOSFET operating under normal biasing conditions at room temperature is reported. A physical model hot-electron trapping in SiO/sub 2/ developed and used with a two-dimensional device simulator (PISCES) to simulate aging conditions. The initial takes place near high-field drain region spreads over long time toward source. degraded I-V characteristics MOSFET exhibit shift pinchoff voltage compression transconductance, for forward reverse...

This paper presents a digitally controlled way of generating the sinusoidal signal with less memory consumption. Moreover, this also new switching frequency modulation technique. technique utilizes concept spread spectrum that is used to suppress electromagnetic interference (EMI) caused by high frequencies. Measurement results at output sine pulse-width generation show when was applied conventional triangular wave and fundamental, second, third harmonics were reduced, respectively, 12.8,...

A measurement-based quasi-static nonlinear field-effect transistor (FET) model relying on an artificial neural network (ANN) approach and using real-time active load-pull (RTALP) measurement data for the extraction is presented SOS-MOSFET. The efficient phase sweeping of RTALP drastically reduces number large-signal measurements needed development verification while maintaining same intrinsic voltage coverage as in conventional passive or systems. Memory effects associated with parasitic...

A new ac MODFET model including distributed effects is presented. We have solved the wave equation of MODFET, which automatically accounts for propagation delay, capacitances, and charging resistances. Using a frequency power series proposed by Ziel, we derive an approximate analytic expression four intrinsic Y parameters. verify that truncated expansion used accurate frequencies up to twice unilateral power-gain cutoff-frequency. The parameters derived hold from threshold region edge...

Fuelled by rapid growth in the communications industry, compound heterostructures and related high-speed semiconductor devices are spearheading drive toward smaller, faster lower-power electronics. High-speed heterostructure is a textbook on modern intended for both graduate students practising engineers. This book concerned with underlying physics of as well practical analytical techniques modeling simulating these devices. Emphasis placed present immediate future such MODFET, HBT RTD. The...