A5079697542- 2D Materials and Applications
- Graphene research and applications
- MXene and MAX Phase Materials
- Perovskite Materials and Applications
- Advanced Thermoelectric Materials and Devices
- Thermal Radiation and Cooling Technologies
- Advancements in Battery Materials
- Advanced Thermodynamics and Statistical Mechanics
- Extraction and Separation Processes
- Advanced battery technologies research
- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- Silicon Carbide Semiconductor Technologies
- Copper Interconnects and Reliability
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Battery Technologies Research
- Copper-based nanomaterials and applications
- Advanced Memory and Neural Computing
- ZnO doping and properties
- Supercapacitor Materials and Fabrication
Northwestern Polytechnical University
2020-2023
Institute of Physics
2023
Henan Academy of Sciences
2023
Guangxi University
2017-2019
Abstract Recently, van der Waals heterojunction based on 2D materials emerges as a promising technology for optoelectronic integrated circuits. Here, self‐driven logic device is demonstrated vertically stacked of black phosphorus and molybdenum telluride. Through the electrostatic doping by gating, dynamically tuned to isotype (p‐P n‐N) anisotype (p‐N) while built‐in electric field in greatly changed. Consequently, photovoltaic effect switchable gate voltage, enabling novel element without...
Abstract As a 2D semiconductor, indium selenide (InSe) has shown great potentials in electronic and optoelectronic applications attributed to high carrier mobility moderately large bandgap. However, switchable doping polarity of intrinsic InSe by electrical gating is not yet demonstrated, which essential for complementary electronics. In this work, the ambipolarity realized exploited through van der Waals (vdW) integration with metal electrodes, gets rid Fermi‐level pinning at...
Abstract Temperature significantly impacts responsivity, detectivity, and stability of photodetectors, which are crucial for converting optical signals to electrical in applications like communication imaging. WS 2 , a transition metal dichalcogenide with tunable band gaps high carrier mobility, shows promise optoelectronics. However, previous studies on nanotube-based photodetectors primarily focused room temperature conditions traditional synthesis methods, have limitations morphology...
Two-dimensional (2D) material photodetectors have gained great attention as potential elements for optoelectronic applications. However, the linearity of photoresponse is often compromised by carrier interaction, even in 2D photodiodes. In this study, we present a new device concept dual-floating van der Waals heterostructures (vdWHs) photodiode employing ambipolar MoTe2 and n-type MoS2 semiconductors. The presence type II heterojunctions on both sides channel layers effectively deplete...
Two-dimensional (2D) materials have attracted tremendous interests because of various advantages, such as high carrier mobility, favorable band gap, strong light-matter interaction, and flat dangling-bond-free surface. However, the photodetection performance pristine monolayer 2D is not competitive with that their bulk counterpart due to atomic thickness. Here, we demonstrated direct growth WS2 on Si3N4 substrate by chemical vapor deposition. The porous morphology formed at surface during...
The potential drop in the polysilicon depletion layer cannot be neglected modeling of nanoscale MOSFET. A continuous model and a potential-based drain current taking into account effect are developed for fully depleted surrounding gate performance derived analytical models verified with numerical simulation.