A5101592448- 2D Materials and Applications
- MXene and MAX Phase Materials
- Perovskite Materials and Applications
- Graphene research and applications
- Advanced Photocatalysis Techniques
- Topological Materials and Phenomena
- Electrocatalysts for Energy Conversion
- Copper-based nanomaterials and applications
- nanoparticles nucleation surface interactions
- Advanced Memory and Neural Computing
- Semiconductor materials and interfaces
- Quantum Dots Synthesis And Properties
- Surface and Thin Film Phenomena
- Chalcogenide Semiconductor Thin Films
Oxford Instruments (United Kingdom)
2022
Imperial College London
2016-2020
The solar-assisted oxidation of water is an essential half reaction for achieving a complete cycle splitting. search efficient photoanodes that can absorb light in the visible range paramount importance to enable cost-effective solar energy-conversion systems. Here, we demonstrate atomically thin layers MoS2 and WS2 oxidize O2 under incident light. Thin films solution-processed nanosheets display n-type positive photocurrent densities 0.45 mA cm–2 evolution simulated irradiation....
We demonstrate strong anisotropic spin-orbit interaction (SOI) in graphene induced by monolayer WS_{2}. Direct comparison between graphene-monolayer WS_{2} and graphene-bulk systems magnetotransport measurements reveals that transition metal dichalcogenide can induce much stronger SOI than bulk. Detailed theoretical analysis of the weak antilocalization curves gives an estimated energy (E_{so}) higher 10 meV. The symmetry is also discussed, dominant z→-z symmetric only explain experimental...
The rise of atomically thin materials has the potential to enable a paradigm shift in modern technologies by introducing multi-functional semiconductor industry. To date growth high quality semiconductors (e.g. WS2) is one most pressing challenges unleash these and mono- or bi-layers with crystal yet see its full realization. Here, we show that novel use molecular precursors controlled synthesis bi-layer WS2 leads superior material compared widely used direct sulfidization WO3-based...
Combining single-layer two-dimensional semiconducting transition-metal dichalcogenides (TMDs) with a graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these heterostructures. Here, we report and structural transferred $\mathrm{W}{\mathrm{S}}_{2}$ on epitaxial using micro-Raman spectroscopy, angle-resolved photoemission spectroscopy measurements, density functional theory (DFT) calculations. The results show good as...
We report a systematic study on strong enhancement of spin-orbit interaction (SOI) in graphene induced by transition-metal dichalcogenides (TMDs). Low-temperature magnetotoransport measurements proximitized to different TMDs (monolayer and bulk ${\mathrm{WSe}}_{2},{\mathrm{WS}}_{2}$, monolayer ${\mathrm{MoS}}_{2})$ all exhibit weak antilocalization peaks, signature SOI graphene. The amplitudes the are for materials thickness, we find that ${\mathrm{WSe}}_{2}$ ${\mathrm{WS}}_{2}$ can induce...
Transient currents in atomically thin MoTe 2 field‐effect transistors (FETs) are measured during cycles of pulses through the gate electrode. The curves transient analyzed light a newly proposed model for charge‐trapping dynamics that renders time‐dependent change threshold voltage as dominant effect on channel hysteretic behavior over emission from charge traps. is expected to be instrumental understanding fundamental physics governs performance FETs and applicable entire class thin‐based...
Splitting salt water via sunlight into molecular oxygen and hydrogen for use as fuel or an energy carrier is a clear pathway toward renewable energy. Monolayer MoS2 WS2 are promising materials the energetically demanding oxidation reaction, absorbing ∼10% of incident light in visible spectrum possessing chemical stability band edges more positive than potential water. A heterostructure MoS2/WS2 forms type-II heterojunction, supporting fast separation photogenerated charge carriers across...
Abstract Monolayer tungsten disulphide (WS 2 ) is a direct band gap semiconductor which holds promise for wide range of optoelectronic applications. The large-area growth WS has previously been successfully achieved using W(CO) 6 precursor, however, this flammable and potent source carbon monoxide (CO) upon decomposition. To address issue, we have developed process the wafer-scale monolayer from hexachloride (WCl precursor in commercial cold-wall CVD reactor. In comparison to , WCl less...
Tungsten disulfide is one of the prominent transition metal dichalcogenide materials, which shows a from an indirect to direct bandgap as layer thickness reduced down monolayer. To use monolayers in devices, detailed knowledge about luminescence properties regarding not only excitonic but also defect‐induced contributions needed. Herein, are irradiated with ions different fluences create defect densities. Apart contributions, two additional emission bands observed at low temperatures. These...