A5103159218- Supercapacitor Materials and Fabrication
- Advanced Memory and Neural Computing
- Advanced battery technologies research
- Magnetic properties of thin films
- Advanced Sensor and Energy Harvesting Materials
- Ferroelectric and Negative Capacitance Devices
- ZnO doping and properties
- Gas Sensing Nanomaterials and Sensors
- Air Quality Monitoring and Forecasting
- Industrial Vision Systems and Defect Detection
- Power Line Inspection Robots
- Advanced DC-DC Converters
- Power Systems and Technologies
- Conducting polymers and applications
- Multilevel Inverters and Converters
- Magnetic Properties and Applications
- Transition Metal Oxide Nanomaterials
- Electrocatalysts for Energy Conversion
- Welding Techniques and Residual Stresses
- Ga2O3 and related materials
- Copper-based nanomaterials and applications
- Fire Detection and Safety Systems
- Electromagnetic wave absorption materials
- Smart Grid and Power Systems
- Vibration and Dynamic Analysis
Zhejiang University
2024
Shanghai Electric (China)
2024
Sany (China)
2023
University of South China
2022
University of Science and Technology Beijing
2014-2017
State Council of the People's Republic of China
2016-2017
Heilongjiang University of Science and Technology
2012
Strain-induced piezoelectric potential (piezopotential) within wurtzite-structured ZnO can engineer the energy-band structure at a contact or junction and, thus, enhance performance of corresponding optoelectronic devices by effectively tuning charge carriers' separation and transport. Here, we report fabrication flexible self-powered ZnO/Spiro-MeOTAD hybrid heterojunction ultraviolet photodetector (UV PD). The obtained device has fast stable response to UV light illumination zero bias....
Abstract In this paper, reduced graphene oxide functionalized with cobalt ferrite nanocomposites (CoFe@rGO) as a novel type of electromagnetic wave (EW) absorbing materials was successfully prepared by three-step chemical method including hydrothermal synthesis, annealing process and mixing paraffin. The effect the sample thickness amount paraffin on EW absorption properties composites studied, revealing that peaks shifted toward low frequency regions increasing while other conditions had...
Fiber-shaped asymmetric supercapacitors with ultrahigh energy density and excellent mechanical stability.
Haptic memory, from the interaction of skin and brain, can not only perceive external stimuli but also memorize it after removing stimuli. For mimicry human sensory a self-powered artificial tactile memorizing system was developed by coupling bionic electronic nonvolatile resistive random access memory (RRAM). The tribotronic nanogenerator is utilized as to transform touching signal into electric pulse, which will be programmed brain: RRAM. Because advanced structural designs accurate...
Fiber supercapacitors (FSCs) have great application potential in future smart textiles and portable wearable electronics because of their flexibility, tiny volume wearability.
An adaptive interface electronic band structure was designed for improving the capacitance by introducing a TiO<sub>2</sub> embedding layer at ZnO/Ni(OH)<sub>2</sub> interface.
A n-channel field effect transistor (FET) based on ZnO microwire has been fabricated for ultraviolet detection, where a PEDOT:PSS/ZnO wire junction serves as the gate. The sensitivity of FET was enhanced by two orders magnitude with fast response time <1 s at 3 V compared Ag–ZnO–Ag detector under illumination UV light (325 nm). Such great improvement in photoresponse is attributed to introduction depletion layer, resulting lower dark current. change channel width various intensities...
A NiCr film is introduced in magnetic tunnel junction (MTJ) seed layer to improve the smoothness of multilayer and enhance perpendicular anisotropy (PMA) pinning layer. Especially motived by better uniformity tunneling magnetoresistance (TMR) switching current density (Jc), superiority endurance data retention for less tailing bits demonstrated. Benefiting from higher spin-transfer-torque (STT) efficiency, coercivity lower Jc were achieved at same time, with satisfying 10 years 85 °C cycling...
The large-scale fabrication of three-terminal magnetic tunnel junctions (MTJs) with high yield is becoming increasingly crucial, especially the growing interest in spin-orbit torque (SOT) random access memory (MRAM) as next generation MRAM technology. To achieve and consistent device performance MTJs perpendicular anisotropy, an integration flow has been developed that incorporates special MTJ etching technique other CMOS-compatible processes on a 300 mm wafer manufacturing platform....
Defects in the free layer are considered to be main cause of balloon effect, but there is little insight into synthetic antiferromagnetic (SAF) layer. To address this shortcoming, work, an optimized SAF was introduced perpendicular magnetic tunneling junction (pMTJ) stack eliminate low-probability bifurcated-switching phenomenon. The results indicated that Hf field film improved significantly from ~5700 Oe ~7500 Oe. A magnetoresistive random access memory (MRAM) test chip also fabricated...
Abstract A three-phase three-level Vienna rectifier is proposed to improve the power factor and reduce harmonic content for DC charging pile. Based on current hysteresis comparison control strategy, voltage deviation of midpoint dc-link capacitor introduced into reference, balance realized by adjusting dc offset reference. Finally, simulation model based PSIM established, feasibility method verified under conditions load stepping. Under steady-state condition, at grid side greater than 0.99,...