D. Cannatà

ORCID: 0000-0003-4072-0099
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About
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Research Areas
  • Acoustic Wave Resonator Technologies
  • Gas Sensing Nanomaterials and Sensors
  • Analytical Chemistry and Sensors
  • Diamond and Carbon-based Materials Research
  • Advanced Chemical Sensor Technologies
  • Semiconductor materials and devices
  • Mechanical and Optical Resonators
  • Metal and Thin Film Mechanics
  • Ultrasonics and Acoustic Wave Propagation
  • Electronic and Structural Properties of Oxides
  • Advanced MEMS and NEMS Technologies
  • Ferroelectric and Piezoelectric Materials
  • ZnO doping and properties
  • Advanced Fiber Optic Sensors
  • Nanofabrication and Lithography Techniques
  • stochastic dynamics and bifurcation
  • Neuroscience and Neural Engineering
  • Ferroelectric and Negative Capacitance Devices
  • Insect Pheromone Research and Control
  • Advancements in Semiconductor Devices and Circuit Design
  • Advanced Sensor and Energy Harvesting Materials
  • Advanced Memory and Neural Computing
  • Electrochemical Analysis and Applications
  • Boron and Carbon Nanomaterials Research
  • Electromagnetic Fields and Biological Effects

Institute for Microelectronics and Microsystems
2018-2025

National Research Council
2008-2023

Bracco (Italy)
2022

Institute of Acoustics and Sensors "Orso Mario Corbino"
2008-2020

Institute of Acoustics
2014-2016

Sensors (United States)
2016

National Academies of Sciences, Engineering, and Medicine
2010-2011

Consorzio Roma Ricerche
2007

Diamond films are very desirable for application to SAW devices because of their high acoustic wave velocity, which allows the extending frequency limit operation at a given interdigital transducer line-width resolution. Use high-quality AIN as piezoelectric layer in conjunction with diamond is also its velocity--the highest among all materials--together excellent electrical, mechanical, and chemical properties. The problems arising growth A1N on have prevented, until now, use this...

10.1109/tuffc.2005.1561635 article EN IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control 2005-10-01

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> A thin-film bulk acoustic resonator (TFBAR) based on a vibrating membrane of <formula formulatype="inline"><tex>$\hbox{AlN/Si}_{3}\hbox{N}_{4}$</tex> </formula> has been fabricated onto silicon substrate and functionally characterized as gas sensor at resonating frequency 1.045 GHz. This novel TFBAR-based functionalized by sensing nanocomposite layer, prepared Langmuir–Blodgett (LB) technique,...

10.1109/ted.2008.919283 article EN IEEE Transactions on Electron Devices 2008-04-28

Zinc oxide (ZnO) thin films have been grown by radio frequency sputtering technique on fused silica substrates. Optical and morphological characteristics of as-grown ZnO samples were measured various techniques; an X-ray diffraction spectrum showed that the exhibited hexagonal wurtzite structure c-axis-oriented normal to substrate surface. Scanning electron microscopy images dense columnar layers, light absorption measurements allowed us estimate penetration depth optical radiation in 200...

10.3390/s23094197 article EN cc-by Sensors 2023-04-22

The propagation of interface acoustic waves (IAWs) in 128° YX-LiNbO3/SU-8/overcoat structures was theoretically studied and experimentally investigated for different types overcoat materials thicknesses the SU-8 adhesive layer. Three-dimensional finite element method analysis performed using Comsol Multiphysics software to design an optimized multilayer configuration able achieve efficient guiding effect IAW at LiNbO3/overcoat interface. Numerical results showed following: (i) faster than...

10.3390/mi16010099 article EN cc-by Micromachines 2025-01-16

An electroacoustic chemical sensor based on thin-film bulk acoustic wave resonators (TFBAR) is presented. It operates the same principle of well-known quartz crystal micro-balance, at an operation frequency extended up to several GHz. The larger output signal, associated higher frequency, a condition improve device sensitivity. TFBARs have been implemented (001) Si wafers, using Si3N4∕AlN membranes, obtained by anisotropic etching Si. Time response and calibration curves tested TFBAR sensors...

10.1063/1.2112187 article EN Applied Physics Letters 2005-10-18

We report for the first time on dc and RF performance of novel MISFETs fabricated hydrogen-terminated (H-terminated) single crystal diamond film using vanadium pentoxide (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> ) as insulating material. The active devices were characterized in terms static I-V characteristics transconductance well S-parameters calculation maximum cutoff...

10.1109/ted.2016.2617362 article EN IEEE Transactions on Electron Devices 2016-10-27

An electroacoustic micro-device based on the propagation of guided acoustic Lamb waves in AlN/Al plate is described. The AlN thin film deposited by sputtering technique, optimized to achieve a high degree orientation (rocking curve full-width at half-maximum /sp lap/ 3.5 degrees ) c-axis perpendicular surface. micromachined using anisotropic reactive ion etching (RIE), followed isotropic RIE remove silicon underlayer. Simulation results for dispersion phase velocity curves and...

10.1109/tuffc.2010.1530 article EN IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control 2010-05-01

It is shown that the dielectric and piezoelectric properties of Ba(Ti0.8Zr0.2)O3-x(Ba0.7Ca0.3)TiO3 (x = 0.45) (BCTZ 45) epitaxial thin films have a nontrivial dependence on film thickness. BCTZ 45 with different thicknesses (up to 400 nm) been deposited SrTiO3 by pulsed laser deposition investigated combined techniques: conventional off-axis X-ray diffraction, high resolution transmission electron microscopy piezoforce microscopy. The changes occurring in when their thickness increases...

10.1038/s41598-018-20149-y article EN cc-by Scientific Reports 2018-01-26

The development of organic electronic requires a non contact digital printing process. European funded e-LIFT project investigated the possibility using Laser Induced Forward Transfer (LIFT) technique to address this field applications. This process has been optimized for deposition functional and inorganic materials in liquid solid phase, set polymer dynamic release layer (DRL) developed allow safe transfer large range thin films. Then, some specific applications related heterogeneous...

10.1117/12.2004062 article EN Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE 2013-03-29

Among the many biological effects caused by low intensity extremely high frequency electromagnetic fields (EHF-EMF) reported in literature, those on nervous system are a promising area for further research. The mechanisms which these alter neural activity still unclear and thus far there appears to be no dependence regarding neuronal responses. Therefore, proper vitro models preliminary screening studies of interaction between cells with EMF needed. We designed an artificial axon model...

10.1038/s41598-018-27630-8 article EN cc-by Scientific Reports 2018-06-12

Piezoelectric c-axis oriented zinc oxide (ZnO) thin films, from 1.8 up to 6.6 µm thick, have been grown by radio frequency magnetron sputtering technique onto fused silica substrates. A delay line consisting in two interdigital transducers (IDTs) with wavelength λ = 80 was photolith-ographically implemented the surface of ZnO layers. Due IDTs split finger con-figuration and metallization ratio (0.5), propagation both fundamental, third nineth harmonic Rayleigh waves is excited; also, three...

10.20944/preprints202406.1804.v1 preprint EN 2024-06-26

In this work, a single crystal CVD diamond film with novel three-dimensional (3D) interdigitated electrode geometry has been fabricated the Reactive Ion Etching (RIE) technique in order to increase charge collection efficiency (CCE) respect that obtained by standard superficial electrodes. The geometrical arrangement of electric field lines due 3D patterning electrodes results shorter travel path for excess carriers, thus contributing more efficient mech-anism. CCE device was mapped means...

10.1209/0295-5075/108/18001 article EN EPL (Europhysics Letters) 2014-09-25

The effectiveness and long-term stability of the surface transfer doping H-terminated diamond induced by a very thin V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> /Al xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> double layer were deeply investigated. experimental results demonstrate that deposition 5 nm Al does not alter properties /H-terminated interface remarkably improves...

10.1109/led.2019.2903578 article EN IEEE Electron Device Letters 2019-03-07
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