Arun Tej Mallajosyula

ORCID: 0000-0003-4112-4344
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About
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Research Areas
  • Conducting polymers and applications
  • Perovskite Materials and Applications
  • Organic Electronics and Photovoltaics
  • Advanced Memory and Neural Computing
  • Carbon Nanotubes in Composites
  • Semiconductor materials and interfaces
  • Organic Light-Emitting Diodes Research
  • Molecular Junctions and Nanostructures
  • Quantum Dots Synthesis And Properties
  • Ferroelectric and Negative Capacitance Devices
  • Chalcogenide Semiconductor Thin Films
  • Nanowire Synthesis and Applications
  • Neuroscience and Neural Engineering
  • solar cell performance optimization
  • Photovoltaic Systems and Sustainability
  • Solid-state spectroscopy and crystallography
  • Fullerene Chemistry and Applications
  • Semiconductor materials and devices
  • Transition Metal Oxide Nanomaterials

Indian Institute of Technology Guwahati
2018-2024

Los Alamos National Laboratory
2015-2016

Center for Integrated Nanotechnologies
2016

Indian Institute of Technology Kanpur
2008-2012

Low-cost solar technologies such as perovskite cells are not only required to be efficient, but durable too, exhibiting chemical, thermal and mechanical stability. To determine the stability of cells, fracture resistance a multitude solution-processed organometal trihalide films utilizing these were studied. The influence stoichiometry, precursor chemistry, deposition techniques, processing conditions on layers was investigated. In all cases, perovskites offered negligible fracture, failing...

10.1016/j.eml.2016.06.006 article EN other-oa Extreme Mechanics Letters 2016-06-28

Abstract The limits of transistor scaling and digital architectures are encouraging research into new electronic materials, devices, systems to meet growing computing demands. In the realm artificial intelligence, mimicking brain activity for neuromorphic is a promising approach. Herein, Ruddlesden–Popper (RP) perovskite‐based flexible environmentally stable memristors presented that achieve on‐demand resistive switching between several nonvolatile states by controlling number layers...

10.1002/aelm.202200908 article EN cc-by Advanced Electronic Materials 2023-02-12

Hybrid organic–inorganic metal halide perovskite (HOIP)-based memristors have captured strong attention not only as an emerging candidate for next-generation high-density information storage technology but also use in healthcare and the Internet of Things (IoT) because their unique properties: low weight, flexibility, compatibility, stretchability, power consumption. In this Perspective, we review recent advances various aspects flexible focusing on selection substrates, materials,...

10.1021/acs.jpclett.1c02105 article EN The Journal of Physical Chemistry Letters 2021-09-07

Abstract Von Neumann bottleneck necessitates the creation of dedicated processors for artificial intelligence tasks, such as in-memory computing, where memristors are formulated synapses. Perovskites great candidates owing to their mixed ionic and electronic conduction well cost-effective processing techniques. In this work, we have developed a highly stable, lead-free perovskite fabricated using thermally evaporating hot-pressed 0D Cesium Bismuth Iodide (Cs3Bi2I9) pellets on flexible PET...

10.1088/2058-8585/adacf9 article EN Flexible and Printed Electronics 2025-01-22

Poly-(3-hexylthiophene) (P3HT)—single walled carbon nanotube (SWNT) solar cells were fabricated and compared with single layer P3HT devices. P3HT:SWNT devices found to have higher efficiencies than only by at least a factor of two. Zero field mobility values 1.20×10−7 cm2 V−1 s−1 5.97×10−7 calculated from space charge regime for P3HT:SWNT, respectively. The SWNTs predominantly metallic nature, as revealed Raman spectroscopy. Morphology studies show that the increase local ordering...

10.1063/1.3493067 article EN Journal of Applied Physics 2010-11-01

Abstract This paper analyzes the effects of scaling and measurement conditions on performance hybrid organic inorganic perovskite (HOIP) devices having bipolar resistive switching characteristics. Electroforming voltage, SET current, ON/OFF ratios are found to be area dependent. Linear voltage sweep pulse characterization showed that parameters such as compliance scan rate, width, amplitude, frequency significantly alter device parameters. The CH 3 NH PbI memristors fabricated has FORMING,...

10.1002/aelm.202100472 article EN Advanced Electronic Materials 2021-08-20

The charge transport properties of bulk heterojunction solar cells formed by blending poly-(3-hexylthiophene) (P3HT) and [6,6] phenyl C61 butyric acid methyl ester (PCBM) were improved doping with single walled carbon nanotubes (SWNTs). SWNTs used not functionalized, contained both metallic semiconducting tubes. Their work function was found to be 4.89 eV. Unlike P3HT:PCBM interface, the P3HT:SWNT interface has been inefficient for generation. Using at concentrations below 1 wt. %, cell...

10.1063/1.3598081 article EN Journal of Applied Physics 2011-06-15

A prerequisite for carbon nanotube-based optoelectronic devices is the ability to sort them into a pure semiconductor phase. One of most common sorting routes enabled through using specific wrapping polymers. Here we show that subtle changes in polymer structure can have dramatic influence on figures merit photovoltaic device. By comparing two commonly used polyfluorenes (PFO and PFO-BPy) (7,5) (6,5) chirality SWCNTs, demonstrate they contrasting effects device efficiency. We attribute this...

10.1021/acsnano.6b04885 article EN ACS Nano 2016-11-27

In this work, a hybrid organic–inorganic perovskite (HOIP)-based memristor is presented that shows two different types of bipolar resistive switching (BRS) by applying electric fields opposite polarities. The first type BRS, referred to as "type A" here, exhibits VSET, VRESET, and ON/OFF ratio 0.47 V, −0.32 369.91, respectively. On the other hand, second B" VSET VRESET 0.42 respectively, along with an excellent 5882.32. pristine HOIP requires positive voltage for electroforming, followed...

10.1021/acsaelm.1c01200 article EN ACS Applied Electronic Materials 2022-03-02

Poly(3-hexylthiophene) (P3HT):single walled carbon nanotube (SWNT) and poly(3-octylthiophene) (P3OT):SWNT thin films bulk heterojunction solar cells were fabricated with 0, 1, 2 wt % of SWNTs. The current density in P3HT is found to be higher than that P3OT by an order magnitude at 5 V. Hole mobility P3OT. Photoluminescence measurements show the nature electronic interaction SWNTs not same. For P3OT:SWNT (1 %) devices, a ∼3 times increase short circuit Jsc was obtained compared pristine...

10.1143/jjap.48.011503 article EN Japanese Journal of Applied Physics 2009-01-01

Most of the memristor devices require an electroforming step to initiate resistance switching in them. Electroforming a pristine could alter material composition and/or device structure, thereby, altering its electrical resistance. This acts as vital optimize for memory applications. In this work, commercially available Ge2Se3 chalcogenide memristors have been characterized electrically. these devices, active layer is sandwiched between tungsten bottom electrode and silver top layer, their...

10.1088/1361-6463/aba56e article EN Journal of Physics D Applied Physics 2020-07-13

An improved understanding of photovoltaic and electrical properties poly-3(hexylthiophene) (P3HT) - single walled carbon nanotubes (SWNT) bulk heterojunction solar cells was achieved by studying light dark characteristics current density voltage (J-V) devices fabricated with different blend ratios. The SWNTs inside P3HT were found to be in the form ropes diameters up 30 nm. open circuit (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</inf>...

10.1109/pvsc.2008.4922722 article EN Conference record of the IEEE Photovoltaic Specialists Conference 2008-05-01

In this work, various metal nanoparticles have been used to improve the efficiency of a single layer 2D/3D mixed-dimensional hybrid tin perovskite solar cell, exploiting surface plasmon effect. Silvaco TCAD and Lumerical FDTD software for study. As first step, thickness layer, without presence any nanoparticles, has optimized using experimentally determined optical constants. It found that best possible 14.13% is obtained at 180 nm. At thickness, size position in varied. With spherical...

10.1109/pvsc48317.2022.9938955 article EN 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC) 2022-06-05

In this paper, lead-free tin perovskite solar cell has been investigated using 2D-Sentaurus TCAD simulation. A planar structure consisting of PEDOT:PSS as the hole transport layer, FASnI <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> absorber layer and PCBM electron simulated. Using physics-based optical transfer matrix drift-diffusion models, effect thicknesses angle incidence have investigated. The results show that in order to...

10.1109/pvsc43889.2021.9518909 article EN 2021-06-20

In this work, the impact of spherical silver nanoparticles (Ag NPs) on performance mixed-dimensional tin perovskite solar cells (Sn-PSCs) was explored using Silvaco 2D TCAD and Lumerical software. Embedding 10 nm Ag NPs within electron transport layer at cathode interface led to an increase 8.65% boost in photocurrent density (JPH) through a plasmonic effect, resulting maximum power conversion efficiency 23.16%. However, presence metal hole reduced absorption active layer. Notably, our...

10.1021/acsaelm.3c01166 article EN ACS Applied Electronic Materials 2024-01-19
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