About
Contact & Profiles
A5057217615
Research Areas
- Perovskite Materials and Applications
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
University of Nebraska–Lincoln
2022
We report the elevated temperature (22 °C ≤ T 600 °C) dielectric function properties of melt grown single crystal ZnGa2O4 using a spectroscopic ellipsometry approach. A dependent Cauchy dispersion analysis was applied across transparent spectrum to determine high-frequency index refraction yielding slope 3.885(2) × 10−5 K−1. model critical point examine and transitions for each temperature. The lowest energy M0-type associated with direct bandgap transition in is shown red-shift linearly as...
10.1063/5.0087623
article
EN
publisher-specific-oa
Applied Physics Letters
2022-03-28
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