This paper describes the analysis and design of saturated silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) switches for millimeter-wave applications. A switch optimization procedure is developed based on detailed theoretical then used to multiple variants. The utilize IBM's 90-nm 9HP technology, which features SiGe HBTs with peak f T/ fmax 300/350 GHz. Using a reverse-saturated configuration, single-pole double-throw measured insertion loss 1.05 dB isolation 22 achieved at 94...

This paper presents the design and thorough on-wafer characterization of two G-band low-noise amplifiers (LNAs) implemented using 0.13-μm silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) with peak f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> 300/500 GHz. The impact substrate network optimized via interconnections on SiGe HBT performance is investigated to...

This paper presents a 138-170 GHz active frequency doubler implemented in 0.13 μm SiGe BiCMOS technology with peak output power of 5.6 dBm and power-added efficiency 7.6%. The achieves conversion gain 4.9 dB consumes only 36 mW DC at drive through the use push-push doubling stage optimized for low power, along low-power buffer. To best our knowledge, this highest efficiency, fundamental suppression all D-band G-band HBT doublers to date.

This letter presents a novel implementation of V-band single-pole double-throw switch that facilitates the internal calibration radiometers by integrating an ambient noise source and avalanche source. The is implemented in 0.13-μm SiGe bipolar-CMOS (BiCMOS) process uses shunt topology with λ/4 directional couplers inject from using collector-base junction heterojunction bipolar transistor (HBT) attains measured excess ratio 18.7 dB at 60 GHz. achieves midband insertion loss 2.0 isolation 22...

The single-event transient (SET) response of a SiGe-based, L-band low-noise amplifier (LNA) is investigated, with focus on providing recommendations for radiation event simulation techniques. Pulsed-laser, two-photon absorption experiments show that the SET sensitivity SiGe LNA highly dependent operating conditions and strike location. Time frequency-domain analyses raise potential concerns digital data modulated RF carrier signals. Device circuit-level ion-strike TCAD simulations are...

This work provides a detailed examination of the stability SiGe cascode low noise amplifiers (LNAs). The upper base is identified as problematic node for stability. S-probe simulations are used to extract reflection coefficients internal circuit and provide insight on how improve amplifier thereby establish "best practices" designers. These techniques incorporated into LNA design fabricated 180 nm, 150 GHz f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...

A 1 V supply voltage, 10-22 GHz wideband low-power low noise amplifier (LNA) is implemented in a 0.13 μm SiGe BiCMOS technology, targeting portable single-chip remote sensing radar application. This LNA exhibits measured gain of 15.5 dB at 16 and -3 bandwidth 12 GHz, while dissipating only 4 mA from supply, with intentionally biasing the HBTs weak saturation. The has figure (NF) 3.4 less than 4.4 across operating 10 to 22 GHz. In addition, design offers reduced operational mode 10-16 for...

This paper presents a broadband low-loss quadrature-hybrid-based network that enhances the phase and amplitude matching of quadrature signals. The performance this is investigated, detailed theoretical analysis provided. Several stages can be cascaded to generate balanced Each stage has loss 0.5 dB image rejection ratio (IRR) by approximately 8 dB. Compared with conventional polyphase signal generation methods, proposed enables lower insertion loss, wider bandwidth, reduced sensitivity...

This paper presents a low Phase Noise (PN) and wide tuning range Voltage-Controlled Oscillator (VCO) for V-band applications implemented with silicon-germanium (SiGe) Heterojunction Bipolar Transistor (HBT) switched capacitor bank doubler. A 5-bit binary weighted was using novel Series-Shunt Anti-Parallel (SSAP) SiGe HBT switch, achieving 40% higher quality factor 1.5 dB better PN than those of conventional CMOS bank. Also, owing to Cunit inductance high Q in the LC-tank, this work achieved...

The transmit–receive (T/R) operation of an ultra-thin organic antenna array is presented at a center frequency 9.5 GHz. High transmit power achieved while maintaining ultra-low profile in novel system-on-a-package scheme whereby 32 silicon–germanium (SiGe), transmit/receive integrated-circuit (TRIC) modules have been flip-chip bonded to the board. Each SiGe TRIC drives pair slot-coupled microstrip patch antennas that form 8 <formula formulatype="inline"...

This paper demonstrates the use of an RF power detector to sense occurrence single-event transients (SETs) in circuits and systems. The was connected a low-noise amplifier (LNA), relationship between output LNA investigated via two-photon absorption, pulsed-laser testing, together with mixed-mode TCAD simulations. response shows strong correlation generated SET. An analytical expression for is derived utilized fit data. effects parameters affecting circuit performance on SETs are explored...

We present a co-designed Dicke switch and low-noise amplifier (LNA) in which the incorporates transformer-based topology serves as input matching network of LNA. This is configured to minimize gain mismatch between two switching states caused by process variations while providing low noise figure (NF). The circuit implemented 0.13- μm SiGe BiCMOS technology, it achieves more than 20-dB minimum NF values 4.5 0.58 dB at 300 20 K, respectively. It consumes dc power 15 mW. front-end presents...

This paper presents a 42.5–51.0 GHz integrated tunable bandpass filter and attenuator; hereinafter referred to as "filttenuator," which is implemented in 130 nm SiGe BiCMOS process technology. The filttenuator utilizes with third-order coupled lines high-Q capacitive loads, digital step attenuator zero-compensation technique, loss compensation amplifier achieve precise amplitude control, frequency, high attenuation range, sharp roll-off, rejection. achieves 38 dB worst-case stopband...

This paper discusses the motivation for and accomplishments to date in our ongoing effort develop an integrated G-band SiGe radiometer use large-scale production of remote sensing CubeSats. The constrained nature these platforms necessitates highly integrated, low-power electronics that are well-suited production, assembly, testing. high speeds emerging 4 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sup> -generation BiCMOS technologies...

This paper presents a front-end switch that integrates the ability to provide both loop-back testing and transmit-receive operation. In addition, power detectors are integrated with capacitive couplers sense levels at transmitter output receiver input. The measured results show have constant responsivity can predict level within 0.5 dB. These capabilities added while maintaining an insertion loss of 2.3-2.5 dB isolation 19.5 94 GHz.

This work presents a switchable-core SiGe HBT low-noise amplifier topology that can greatly improve the performance of millimeter-wave Dicke radiometer front-ends. In presented topology, instead implementing switch preceding amplifier, switchable core is proposed enables operation without any insertion loss penalty and substantially improved isolation. A prototype realized in 90 nm BiCMOS technology. The measured results indicate provide functionality with minimum degradation.

For the first time, a transmit-receive (TR), 64-element phased array fully driven by Silicon Germanium (SiGe) integrated circuits and implemented on organic substrates is demonstrated at 9.5GHz. The was realized duroid liquid crystal polymer substrate stack-up. radiating elements are SiGe-based TR modules power amplifiers. Additionally, radio-frequency micro-electromechanical switches allow toggled operation between transmit receive modes. Measurements showed an average bandwidth of 2.55GHz,...

This paper presents the design, optimization, and characterization of a square-law power detector for heterodyne millimeter-wave radiometers implemented using 0.13 μm SiGe HBTs. A 3-dB bandwidth 19–34 GHz (56% fractional bandwidth) is obtained through use inductively degenerated HBTs with large emitter lengths. The achieves minimum noise-equivalent (NEP) 0.49 pW/VHz at 24 peak responsivity 17.1 kV/W. Through careful transistor biasing judicious resistors, measured 1/f noise corner frequency...

Small satellites are increasingly attractive platforms for performing high-quality Earth science radiometric observations. Traditional scientific and instruments extremely expensive, one-of-a-kind designs with long design cycles. In order to maintain long-term uninterrupted data collection, re-designing new large each application every few decades may not be practical. satellites, however, relatively economical can deployed in constellations collect global high spatial temporal resolution....

This paper presents two 18.7 GHz low-noise amplifiers (LNAs) for radiometer applications designed in a SiGe technology featuring HBTs with peak fT / fMAX of 300/500 GHz. Back-side substrate etching is utilized to reduce inductor losses and improves the noise figure (NF) LNAs by an average 0.12 dB across measured band. At GHz, first LNA achieves 1.10 NF, 17.1 dBm OIP <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> , 8.6 gain while...