Abstract In recent years, carbon nanotubes have received widespread attention as promising carbon-based nanoelectronic devices. Due to their exceptional physical, chemical, and electrical properties, namely a high surface-to-volume ratio, enhanced electron transfer thermal conductivity, can be used effectively electrochemical sensors. The integration of with functional group provides good solid support for the immobilization enzymes. determination glucose levels using biosensors,...

Comparative benchmarking of a graphene nanoribbon field‐effect transistor (GNRFET) and nanoscale metal‐oxide‐semiconductor (nano‐MOSFET) for applications in ultralarge‐scale integration (ULSI) is reported. GNRFET found to be distinctly superior the circuit‐level architecture. The remarkable transport properties GNR propel it into an alternative technology circumvent limitations imposed by silicon‐based electronics. Budding GNRFET, using modeling software SPICE, exhibits enriched performance...

The carriers in a carbon nanotube (CNT), like any quasi‐1‐dimensional (Q1D) nanostructure, have analog energy spectrum only the quasifree direction; while other two Cartesian directions are quantum‐confined leading to digital (quantized) spectrum. We report salient features of mobility and saturation velocity controlling charge transport semiconducting single‐walled CNT (SWCNT) channel. ultimate drift SWCNT due high‐electric‐field streaming is based on asymmetrical distribution function that...

Addiction is a chronic relapsing brain disease associated with substantial individual and societal burden. It includes complex phyco-physiological conditions can be recognized by compulsive harmful behaviors towards substance or activity, despite negative consequences “bio-psycho-social-spiritual” disorder. This paper aims to comprehensively review previous research which applied machine learning electroencephalography (EEG) signals for automatic detection of addiction. A systematic search...

Two sets of vertical-shaft Francis turbine-generator unit 10MW capacity are installed in Genyem hydropower station Indonesia with 192.33m rated water head. Adopting the spectrum turbine series models, high-efficiency and good cavitation performance is prioritized based on domestic developed technologies. Then determine installation elevation main parameters draw curve power station. Governor oil pressure device, inlet valve auxiliary system equipment system, compressed air etc. selected. The...

Stanene, a two‐dimensional (2D) material and an allotrope of tin (Sn) from Group IV, possesses honeycomb structure similar to graphene features significant bandgap, making it promising for applications in room‐temperature spintronics, quantum devices, gas sensors, topological insulators. However, research into the electronic properties stanene, particularly nanoribbon remains limited. This study addresses this gap by using nearest‐neighbor tight‐binding (NNTB) method nonequilibrium Green’s...

This study investigated the electronic properties and optical joint density of states (JDOS) graphene nanoribbons (GNRs), with a specific focus on zigzag GNRs (ZGNRs) armchair (AGNRs). Using tight‐binding method MATLAB simulations, we analysed impact first‐, second‐ third‐nearest‐neighbour interactions band structure, DOS JDOS GNRs. Our findings revealed that ZGNRs exhibited metallic characteristics, whereas AGNRs displayed semiconducting characteristics. The inclusion higher‐order resulted...

This study investigates the performance of bit patterned media (BPM) in hard disk drives. It is revealed that written-in errors, rather than traditional signal-to-noise ratio, drive recording BPM. The staggered BPM structure allows for a larger write pole size, resulting field. However, lateral spacing between adjacent islands typically less conventional BPM, leading to higher error rate. investigation determines effective switching field affected by magneto-interaction and finds 21%...

The von Neumann bottleneck is a major challenge in the development of energy-efficient processors capable handling high-workload computations. Computing-in-memory (CiM) technique offers promising solution to overcome memory wall restrictions that limit performance. By embedding processing units directly into memory, CiM can mitigate issues latency and energy consumption during access. In this study, we implemented dual-port design method for 10-Transistor (10T) SRAM bit-cell perform...

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT MOSFET models considered agree well with the trends in available experimental data. results obtained show that nanotubes can significantly reduce drain-induced barrier lowering effect subthreshold swing silicon channel replacement while sustaining smaller area at higher current density. Performance metrics both...

A shopping trolley is a necessary tool for in supermarkets or grocery stores. However, there are trolleys abandoned everywhere after being used. In addition, also safety issues such as sliding down from an escalator. It known to be inconvenience and time wasting customers who rush search desired products supermarket. Therefore, automatic human line following with smart system developed solve these problems. portable robot installed under the lead users items’ location that they plan purchase...

Two-dimensional material hexagonal boron nitride (h-BN), and its one-dimensional thin strips, nanoribbons (BNNRs) are electrically insulating with high thermal stability, making them excellent conductors suitable for high-temperature application. BNNRs wide bandgap semiconductors bandgaps ranging from 4 to 6 eV. This study investigates the electronic properties of single vacancy defects in armchair zigzag configurations. The nearest-neighbour tight-binding model numerical method were used...

The ballistic saturation velocity in a nanoscale metal-oxide-semiconductor field effect transistor (MOSFET) is revealed to be limited the Fermi degenerately induced channel appropriate for quasi-two-dimensional nature of inverted channel. point drain shown rise with increasing voltage approaching intrinsic velocity, giving equivalent channel-length modulation. Quantum confinement degrades mobility confining gate electric as well increases effective thickness oxide. When theory developed...

The current at the onset of saturation in a metal-oxide-semiconductor field-effect transistor (MOSFET) is shown to be limited by drain velocity that increases toward its value with increase voltage. crops up as randomly oriented vectors equilibrium realign themselves become unidirectional presence an extremely high electric field. intrinsic velocity, ultimate function carrier concentration and temperature, consistent predictions ballistic transport. quantum emission either phonon or photon...

As the technology node size decreases, number of static random‐access memory (SRAM) cells on a single word line increases. The coupling capacitance will increase with load line, which reduces performance SRAM, more obvious in SRAM signal delay and power usage. main purpose this study is to investigate stability evaluate consumption 14 nm gate length FinFET‐based 6T cell functionality for direct current (DC) transient circuit analysis, namely, resistor‐capacitor (RC) delay. In particular,...

Ohm's law, a linear drift velocity response to the applied electric field, has been and continues be basis for characterizing, evaluating performance, designing integrated circuits, but is shown not hold its supremacy as channel lengths are being scaled down. In high collision-free ballistic transport predicted, while in low field remains predominantly scattering-limited long-channel. micro/nano-circuit, even logic voltage of 1 V gives an that above critical value εc (ε⪢εc) triggering...

The charge transport in nanowires suitable for high-speed applications depends on carrier's mobility and saturation velocity the conducting channel. It is shown that high does not always lead to higher carrier drift velocity. ultimate (the intrinsic velocity) due high-electric-field streaming based asymmetrical distribution function converts randomness zero-field a streamlined one very electric field. limited an appropriate thermal non-degenerately doped nanowire, increasing with...

High-field electron transport properties in a two-dimensional nanolayer are studied by an application of the anisotropic nonequilibrium distribution function, natural extension Fermi-Dirac inclusion energy gained/absorbed mean free path (mfp). The drift velocity for conical band structure graphene is shown to rise linearly with electric field low that below critical field. field, equal thermal voltage divided mfp, marks transition from ohmic linear saturated behavior high As rises beyond its...

The scaling process of the conventional 2D‐planar metal‐oxide semiconductor field‐effect transistor (MOSFET) is now approaching its limit as technology has reached below 20 nm technology. A new nonplanar device architecture called FinFET was invented to overcome problem by allowing transistors be scaled down into sub‐20 region. In this work, structure implemented in 1‐bit full adder investigate performance and energy efficiency subthreshold region for cell designs Complementary MOS (CMOS),...

Morphology effect is one of the essential factors that influence performance electrochemical biosensors based on ZnO nanostructures. These nanostructures are characterized by anisotropic growth with different dimensionalities such as zero-dimensional, one-dimensional, and two-dimensional. More interestingly, when combining each dimension into another advanced dimensionality, i.e. three-dimensional (3-D), exceptional properties can be generated not otherwise found in low dimensionalities. The...

The equilibrium Fermi–Dirac distribution is revealed to transform an asymmetric in a very high electric field where the energy gained (or lost) mean free path of paramount importance. stochastic velocity vectors randomly oriented and opposite quasifree direction nanowire are shown streamline presence extremely field. complete velocity-field characteristics acquired. ultimate directed drift towering be limited appropriately averaged Fermi strongly degenerate limit only half quantum states...