A5069878154- Silicon Carbide Semiconductor Technologies
- Electromagnetic Compatibility and Noise Suppression
- Multilevel Inverters and Converters
- Real-time simulation and control systems
- HVDC Systems and Fault Protection
- Electric Motor Design and Analysis
- Sensorless Control of Electric Motors
- Microgrid Control and Optimization
- Thermal properties of materials
- Power Systems and Technologies
- Advancements in Semiconductor Devices and Circuit Design
- High-Voltage Power Transmission Systems
- Industrial Technology and Control Systems
- Electrostatic Discharge in Electronics
- Power Systems and Renewable Energy
- Advanced DC-DC Converters
- Heat Transfer and Optimization
- Semiconductor materials and devices
- Induction Heating and Inverter Technology
Zhejiang University
2022-2024
For interior permanent magnet synchronous motor (IPMSM) drives, the accurate solution for optimal current set point under full-speed region is an essential issue to ensure its efficient and reliable operation. However, influence of parameters, including saturation stator resistance on modeling, makes it a challenge accuracy. This article proposes complete online control methods considering cross-saturation inductances resistance. First, effective logic sequence proposed identify specific...
With the development of power electronic converters (PECs), thermal properties high-power insulated gate bipolar transistor (IGBT) module are significant importance in reliability analysis, design, and management PECs. However, present commonly used three-dimensional (3-D) network model, still has limitations accurately obtaining junction temperature IGBT modules. Particularly under high-temperature conditions, its performance is not ideal. This paper proposes a 3-D model considering effect...
Reliability-oriented evaluation of power module has emerged as a pivotal aspect in addressing the demands high-reliability design and cost-effective maintenance for electric vehicle (EV) converter. In this article, fast simulation strategy based on mission profile (MP) is proposed 750-V/820-A insulated gate bipolar transistor (IGBT) used an EV This depends multistep mapping structure, including MP, load condition, junction temperature with detailed electrothermal modeling. A numerical...
Due to the disparate timescale behavior in electrical and thermal aspects, achieving a balance between simulation efficiency accuracy electrothermal analysis of insulated gate bipolar transistor (IGBT) modules has been challenging task. A physical-based stress evaluation approach combining with artificial neural network (ANN) model is proposed this paper, which significantly improves performance circuit simulation. The training data for ANN models are derived from Hefner physical model,...
Numerical simulation-based digitalization has aroused great research interests recently in power electronic design. As the basic but most important problem, numerical stability is sensitive to accumulation of errors, which becomes a new challenge with high-frequency application simulation due switching features and discontinuous events. In this article, factors affecting are systematically analyzed. Then, phase-trajectory region criterion proposed simplify judgement process based on dominant...
This paper deals with a maximum torque per voltage control method of the interior permanent magnet synchronous motor, which aims at high demands for convergence speed and accuracy in electric vehicles applications. First, Newton downhill is adopted solving nonlinear constraints within few iterations, guarantees iterative speed. Second, motor parameters used iteration are identified by hybrid affine projection algorithm (APA) dual sample time. In this approach, effect temperature ignored...
The paper proposes a small-signal model for diode rectifier (DR) in polar frame. From the perspective of amplitudes and phases voltage current on AC side DC side, proposed takes commutation overlap angle dynamics into account explains interaction among state variables sides DR. Furthermore, HVDC line parameters are considered, forming DR-HVDC. Simulation results verify both frequency domain time domain.
Based on the different requirements for IGBT thermal model from device to system level, timescales of time constants each layer package structure are used establish an device-to-system-level simulations. Simulation results verify its accuracy.
The paper gives an analysis about the control strategy of particular multi-terminal ultra high voltage direct current system with parallel converters based on overview reference materials. Main argument focus respective mode for two inverters, i.e. whether one voltage-control while another current-control or both voltage-control. After comparison suitability structure adopting MTDC and UHVDC method respectively as well considering development HVDC project technology, this prefers that...