Dependence of gate leakage current on Al mole fraction AlGaN/GaN high-electron mobility transistors (HEMTs) is studied using temperature-dependent current-voltage and capacitance-voltage characteristics. The reverse mostly dominated by Poole-Frenkel (PF) emission in the structures used this brief. However, it observed that at higher fractions, due to electric field across barrier, Fowler-Nordheim (FN) tunneling also contributes even room temperature above. An expression for critical below...

In this article, the impact of gamma (<inline-formula> <tex-math notation="LaTeX">$\gamma $ </tex-math></inline-formula>) irradiation on passivated and unpassivated AlGaN/GaN HEMT is presented in detail. Passivated GaN-HEMT devices have been exposed to <inline-formula> </tex-math></inline-formula>-radiations a total dose 10 kGy. Post-<inline-formula> </tex-math></inline-formula>-irradiation, refinement ohmic contact, which makes device source/drain, recorded. Alteration Schottky gate...

This work presents the optimization and performance evaluation of AlGaN/GaN high‐electron‐mobility transistors (HEMT) devices through comprehensive Technology Computer‐Aided Design (TCAD) simulations. The conventional experimental device is accurately calibrated to serve as a baseline for analysis. barrier thickness T B analyzed from 25 4 nm, energy band analysis indicated that between 7 nm optimal creating strong two‐dimensional electron gas (2DEG). sheet carrier density further supported...

Gallium nitride/aluminium gallium nitride (GaN/AlGaN) etching in BCl <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /Cl xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based inductively coupled plasma (ICP) is investigated for high electron mobility transistor (HEMT) mesa using rarely preferred mask-photoresist. The critical issues related to photresist burning/deforming, resist removal, selectivity, edge roughening, and nonuniform...

The design and fabrication of gate/source connected multi-finger field plate structures using TCAD ATLAS simulation software is presented. designed are fabricated on indigenous AlGaN/GaN HEMT devices. devices with exhibit about three times improvement in breakdown voltage device close agreement the results. Integration plates have resulted higher VDS (drain to source voltage) operation output power Incorporation also decrease reverse leakage current

This brief investigates the influence of a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Pi $ </tex-math></inline-formula> -shaped gate in extending microwave performance thin GaN buffer AlGaN/GaN HEMT. A well-calibrated simulation deck based on in-house fabricated HEMT demonstrates better reliability when is coupled with buffer. The sample has been investigated under different operating conditions...

This paper presents the electrical comparison of Au and Ni/Au gated HEMT devices diodes. Schottky diodes on an AlGaN/GaN heterostructure exhibit better performance in to conventional with improved barrier height (SBH) lower reverse leakage current. The SBH extracted from I-V for is 1.29 eV 0.74 eV, respectively. contacts GaN have a ideality factor 1.55 than Ni, which 1.61. Capacitance-voltage measurement revealed positive shift threshold voltage case reduced capacitance value respect...

The field plate technology has been regarded as the best practical solution for alleviating several reliability issues observed with high power GaN HEMTs mm-Wave applications. A nonoverlapping sunken source-connected architecture significantly boosts OFF-state breakdown characteristics of device while inflicting modest trade-offs to RF performance. This work focuses on TCAD-based assessment develop physical insights into qualify space-electronics. is studied identify vulnerable points heavy...

GaN thin film etching is investigated and compared for mesa formation in inductively coupled plasma (ICP) of Cl2 with Ar BCl3 gas additives using photoresist mask. Etch characteristics are studied as a function ICP process parameters, viz., power, radio frequency (RF) chamber pressure at fixed total flow rate. The etch rate each ICP/RF power 0.1–0.2 μm/min higher Cl2/Ar mixture mainly due to Cl dissociation efficiency additive that readily provides ion/radical reaction comparison Cl2/BCl3...

A study of Cl2/BCl3-based inductively coupled plasma (ICP) was conducted using thick photoresist mask for anisotropic etching 50 μm diameter holes in a GaAs wafer at relatively high average rate depths more than 150 μm. Plasma etch characteristics with ICP process pressure and the percentage BCl3 were studied greater detail constant coil/bias power. The measured peak-to-peak voltage as function used to estimate minimum energy ions bombarding substrate. found have substantial influence on...

This paper presents the fabrication and electrical characterization of dual metal gated high electron mobility transistors (DMG-HEMTs) on AlGaN/GaN/SiC hetero-structure using oblique normal angle deposition Nickel Titanium respectively as gate metals. A noteworthy advance in device characteristics has been achieved including DC pulse drain current, transconductance, ON-resistance. The upsurge current transconductance is ∼8% 11% respectively. Pulse I–V measurements have executed to evaluate...

Abstract In this work, a comprehensive technology computer aided design-based investigation of buffer-free high electron mobility transistor under proton radiation is presented. With 37.55% thinner architecture (without thick and highly doped Fe buffer) grown on silicon carbide substrate, device design improves the two-dimensional gas (2DEG) confinement helps to eliminate various dispersion effects buffer leakage. To gain better insight into architecture, direct current (DC), thermal, radio...

Abstract In this paper, a metallurgical step-graded uniform quantum barrier (QB) laser diode (LD) structure is proposed, which leads to performance enhancement in terms of reduced electron seepage current, threshold diminished polarization charges at interfaces, and increased power, hole injection efficiency, optical confinement etc. The proposed LD demonstrated the best results among all three structures considered study. output power was from 118 mW 160 QB as compared ungraded reference...

This study presents a modified version of MIS-HEMT via incorporation dielectric pocket with dual metal enabled gate (DP-DMG) architecture to achieve an enhancement in the electrical performance AlGaN/GaN HEMT. A noteworthy improvement DC/RF characteristics is observed DP-DMG HEMT comparison conventionally used single gated Schottky (SMG) including leakage. Moreover, further studied different dielectrics tune its along depth pocket. The maximum rise drain current and transconductance achieved...

This paper presents an extensive Victory TCAD based assessment to evaluate the device performance under heavy ion particle strike induced single event effects (SEEs). The impact of SEEs on π-shaped AlGaN/GaN HEMT architecture has been compared with conventional HEMT. For validation simulation, models have calibrated against experimental data in-house fabricated GaN HEMTs SiC wafers, after which is realized using Silvaco's Process simulation tools. Comparisons demonstrate that π-Gate a SEE...