Gallium oxide (Ga2O3) is rapidly emerging as a material of choice for the development solar blind photodetectors and power electronic devices which are particularly suitable in harsh environment applications, owing to its wide bandgap extremely high Baliga figure merit (BFOM).The Ga2O3 based show robustness against chemical, thermal radiation environments.Unfortunately, current technology still not mature commercial usage., Thus, extensive research on growth various polymorph materials has...

Two-dimensional material-based flexible devices are extremely suitable for smart, portable, and wearable applications. However, the inevitability of substrate strain, which significantly affects device performance, makes it difficult to get a function efficiently. Herein, first time, we report MoS2/β-Ga2O3 broadband photodiode with an enhancement in photocurrent responsivity bending. The electrical analysis heterojunction demonstrated excellent photoresponse characteristics photo-to-dark...

Space charge limited currents in organic semiconductors are frequently observed to obey the power law J−Vm and attributed an exponential distribution of traps having two parameters, namely characteristic energy Et trap concentration Ht. We determine these parameters from J(V) characteristics at or more temperatures reported literature.

Wearable gallium oxide solar-blind photodetector fabricated on muscovite mica is reported for room-temperature as well high-temperature operations. The ultrahigh photoresponsivity of 9.7 A/W obtained 5 V applied bias at room temperature under 75 μW/cm2 weak illumination 270 nm wavelength. detector enables very low noise equivalent power (NEP) 9 × 10–13 W/Hz1/2 and detectivity 2 1012 jones which shows the magnificent detection sensitivity. Further, bending tests are performed robust...

Molybdenum diselenide (MoSe2)/silicon (Si) heterostructures hold promise for advanced devices with improved performance, especially broadband photodetectors a fast response. In this study, we investigate the impact of growth temperature on ultrathin MoSe2 films grown Si(111) substrate using molecular beam epitaxy. The in range 450 to 550 °C is explored. 500 found be optimum crystalline and uniform films. quality thoroughly examined techniques such as reflection high-energy electron...

The polymorphic nature of ultrathin transition metal dichalcogenide (TMDC) materials makes the phase engineering these an interesting field investigation. Understanding phase-controlling behavior different growth parameters is crucial for obtaining large-area a desirable phase. Here, we report detailed study on effect phases few-layer MoTe

SummarySepticaemia is a major threat to survival during the early stages of life. There are several reports that suggest reactive oxygen species (ROs) play role in wide variety diseases. We estimated activity xanthine oxidase (XO), malondialdehyde (MDA) content, creatine phosphokinase (CPK) activity, activities key enzymatic antioxidants, such as superoxide dismutase (SOD), glutathione peroxidase (GPx) and (PO), non-enzymatic viz. uric acid (UA) albumin (ALB), 30 neonates with sepsis 20...

Gallium telluride thin films have emerged as a promising material for various electronic and optoelectronic applications due to their unique properties. In this study, we investigate the growth of nanometer-thick GaTe on sapphire substrates using molecular beam epitaxy explore influence temperature structural, electronic, optical properties films. X-ray diffraction, scanning electron microscopy, photoelectron spectroscopy, Raman measurements are employed characterize structural quality...

According to the approximate theory of transport in a conducting organic material containing exponential traps, ln J versus V plots are straight lines with slope l=TC/T, where TC is characteristic temperature trap distribution. It assumed this that concentration pt trapped holes much larger than p free holes. Our experiments and recent literature results show at high applied voltages observed deviate from bend down. The numerical solution presented article shows contribution space charge...

It is well known in classical mechanics that the frequencies of a periodic system can be obtained rather easily through action variable, without completely solving equation motion. Analogously, equivalent quantum variable appearing Hamilton–Jacobi formalism provide energy eigenvalues bound state problem, necessity corresponding Schrödinger explicitly. This elegant and useful method elucidated here context some not so well-known solvable potentials. also shown how this provides an...

Molybdenum-di-sulfide (MoS2) is being considered as an alternative 2-D material to graphene. Deposition of ultrathin MoS2 layer from bulk sample important criterion in determining the viability its application. This paper discusses about growth and characterization pellet powder exfoliation it. The pellets were sintered at different temperatures (500 - 850 ° nitrogen atmosphere. samples found be polycrystalline nature with hexagonal flakes 100 nm – 1.0 µm sizes. In addition phase, surface...

We improve the trapping model of carrier transport in conducting polymers by integrating coupled Poisson and continuity equations numerically. In case exponentially distributed traps calculated log J vs 1/T plots are straight lines indicating that activation carriers to extended states can be described one single energy, Eeff. The improved agrees well with recent experimental data at high temperatures (i.e., near room temperature). At low does not work since available thermal energy is...

A generalized commutation relation of a single-mode oscillator is proposed. Bose-Einstein, Fermi-Dirac, and Greenberg's infinite statistics are shown to be special cases this relation. The Fock states, coherent analogs squeezed states for constructed. Finally, the quantization free infinite-statistics field discussed using Umezawa-Takahashi procedure [H. Umezawa Y. Takahashi, Prog. Theor. Phys. 9, 14 (1953); Nucl. 51, 193 (1964)].

In this paper, we propose a compact model of the short-channel double-gate (DG) JFETs, which are devices intended for low-power logic applications. order to make current equation continuous through all operating conditions from subthreshold well above threshold without nonphysical fitting parameters, mobile carriers in depletion regions considered. For describing behavior, relevant parameters extracted 2-D analytical solution Poisson's used modify long-channel equations. The field-dependent...