- Advanced Surface Polishing Techniques
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Machining and Optimization Techniques
- Advanced machining processes and optimization
- Diamond and Carbon-based Materials Research
- Polymer Surface Interaction Studies
- Copper Interconnects and Reliability
- Microbial Fuel Cells and Bioremediation
- Wound Healing and Treatments
- Nanofabrication and Lithography Techniques
- Corrosion Behavior and Inhibition
- Metal and Thin Film Mechanics
- Force Microscopy Techniques and Applications
- Analytical Chemistry and Sensors
- Quantum Dots Synthesis And Properties
- Advanced ceramic materials synthesis
- Electrochemical Analysis and Applications
- Surface Modification and Superhydrophobicity
- Surface Roughness and Optical Measurements
- Electrochemical sensors and biosensors
- Advanced Photocatalysis Techniques
- Minerals Flotation and Separation Techniques
- Adhesion, Friction, and Surface Interactions
- Electrodeposition and Electroless Coatings
Lewis University
2015-2025
University of South Dakota
2015
Indiana State University
2015
University of Missouri
2015
Purdue University West Lafayette
2015
Argonne National Laboratory
2012
Cabot Microelectronics (United States)
2007-2009
Clarkson University
2000-2003
Materials Processing (United States)
2003
Hydroxyl radicals play an important role in the planarization of copper films using hydrogen peroxide‐based slurries during microelectronic device fabrication. The generation hydroxyl (*OH) from peroxide presence several amino acids and ions was monitored p‐nitrosodimethylaniline as *OH trapping agent. While addition either acid or to does not generate significant amounts *OH, both them together resulted a increase concentration. This suggests that complex (chelate) is extremely effective...
In this paper, we investigate the potential of a High Efficiency Selective Electrochemical Cell (HESEC) to recover copper from variety semiconductor wastewater streams while also achieving EPA discharge compliance. The chemical-mechanical planarization (CuCMP), wet etch, and electroplating processes produce significant levels laden wastewaters with complex matrices that make recovery difficult. Based on our experimental results, HESEC provides insight into how novel electrochemical cell...
We investigated the tribological, thermal, kinetic, and surface microtextural characteristics of chemical mechanical polishing (CMP) 300 mm p-type <100> prime silicon wafers (and their native oxide) at various pressures, sliding velocities, starting platen temperatures. Results showed dominant tribological mechanism for both oxide to be boundary lubrication. Using frictional data, we pinpointed exact time that corresponded total removal onset polishing. This allowed us separately...
ABSTRACT The synthesis and characterization of a biomimetic composite material composed cellulose acetate embedded with copper‐based metal‐organic framework, MOF‐199 (HKUST‐1), is reported has been investigated for use as an adsorbent in water remediation. Incorporation into enhances the stability framework allowing flexible tunable polymeric material. adsorption methylene blue to cellulose‐MOF199 was tracked spectroscopically over time best described by mixed Langmuir–Freundlich isotherm...
We examined the effect of structure corrosion inhibitors benzotriazole (BTA) and 1,2,4-triazole (TAZ) on Cu removal rate during chemical mechanical planarization. Removal rates were higher for solutions containing TAZ than BTA. Corrosion inhibitor films characterized using atomic force microscopy, cyclic voltammetry, impedance spectroscopy, surface-enhanced Raman mass spectrometry. Inhibitor formed from thicker, more permeable, rougher The addition glycine to showed an increase in...
With the rapid miniaturization of advanced technologies, limiting device defects has become utmost importance in maintaining high performing integrated circuits. Shallow trench isolation (STI) chemical mechanical planarization (CMP) uses a synergistic balance ceria (CeO2) nanoparticles and functional chemistry to modulate surface adsorption interactions necessary remove excess topography. This work aims develop post-CMP cleaning that enhances nanoparticle removal via "soft" encapsulation by...
As feature sizes continue to shrink well beyond the 7 nm node, understanding delicate balance present in chemical mechanical planarization (CMP) process is of utmost importance. In order achieve high through-put and defect-free CMP processes it critical develop predictive analytical techniques that directly correlate macroscopic STI performance metrics (i.e. oxide/nitride removal, defectivity, dishing/erosion). This work employed a suite monitor CeO 2 nanoparticle interfacial redox presence...
A novel add-on hardware device is placed near the point of slurry dispense that can instantaneously activate performance during polishing via megasonic irradiation. This new technology (Flucto-CMP® able to overcome inherent polisher-slurry weaknesses such as wafer-level defects, process vibrations, cost ownership, waste, remval rate (RR), and RR selectivity. Flucto-CMP® has been successfully applied various types CMP slurries resulting in significant increases removal rates copper, SiC,...
Supramolecular nanocomposite materials have emerged as a leading interdisciplinary research area that exploits synergistic relationships at the nanoscale to enhance properties (mechanical and chemical) of next-generation biopolymeric materials. Hydrogels synthesized from natural biopolymers because their intrinsic such noncytotoxicity biodegradability well well-defined three-dimensional, noncovalent network is ideal for modification functionalization. Therefore, it critical develop...
In 2004, pilots reported 46 laser illumination events to the Federal Aviation Administration (FAA), with number increasing approximately 3,600 in 2011. Since that time, of incidents has ranged from 3,500 4,000. Previous studies indicate potential for flight crewmember distraction bright light being introduced cockpit. Compositional variations photoresponsive nanocomposite coatings were applied an aircraft windscreen using a modified liquid dispersion/heating curing process. The attenuating...
Due to the emergence of sub-7 nm technologies, next generation CMP slurry formulations have continued increase in additive (nanoparticle and chemistry) complexity meet stringent device specifications. Therefore, it is essential probe molecular level interactions at nanoparticle/slurry chemistry/substrate interface turn correlate them key performance metrics such as removal rate, post defects, planarization efficiency. This work will address through a series case studies focusing on role...
After defining certain sign conventions for sliding velocity and shear force a PVA brush scrubbing process, simple kinematics model is used to calculate net velocities in the brush-wafer contact region. Next, series of experiments are performed where gradually increased while wafer kept stationery, repeated again with rotating at velocity. For stationary wafer, increasing velocity, partial lubrication takes effect which results less asperity (i.e. reduction SF). SF decreases significantly....
The Chemical Mechanical Planarization (CMP) process can cause various defects, and they be classified as mechanical (i.e., scratching), chemical corrosion), or physiochemical adsorbed contaminants) according to the mechanism of formation. Traditionally, a contact cleaning method involving poly-vinyl alcohol (PVA) brush is used transfer chemistry substrate interest well provide necessary energy for defect removal. While this effective in contaminant removal its reliance on shear forces induce...
We examine the effects of nonionic triblock copolymer surfactant Pluronic P103 on three surfaces different wettability relevant to chemical mechanical planarization (CMP). Two are low-k organosilicate glass (OSG) films, Coral and Black Diamond; third is a silica surface. Atomic force microscopy (AFM) curves were used probe forces over each surface in solutions P103. Each was also examined potassium sulfate investigate effect ionic strengths. The AFM show that both eliminate adhesive at...
In this paper, we investigate the potential of a High Efficiency Selective Electrochemical Cell (HESEC) to recover copper from variety semiconductor wastewater streams while also achieving EPA discharge compliance. The chemical-mechanical planarization (CuCMP), wet etch, and electroplating processes produce significant levels laden wastewaters with complex matrices that make recovery difficult. Based on our experimental results, HESEC provides insight into how novel electrochemical cell...
With the persistent advancement of semiconductor technology, demand for high-efficiency device manufacturing processes has surged. Chemical Mechanical Planarization (CMP) is a cornerstone achieving angstrom-scale surface uniformity crucial integrated circuits (IC) and logic devices. Shallow Trench Isolation (STI) CMP involves selective removal bulk oxide to electrically isolate active components on wafer surfaces. The modulation Ce 3+ 4+ state essential improved performance in both post-CMP...
Microbial fuel cells (MFCs) have emerged as renewable energy sources due to their intrinsic properties directly convert organic substrates into electrical energy. However, sub-optimal power density, limited long-term stability, and high operational costs stunted integration at the industrial scale. These systems function through exploitation of catalytic events microbes under anaerobic conditions. The bacterial interactions electrode interface associated electron transfer mechanisms impact...
Advancement in the utility of conductive polysaccharide-based (i.e., agar, alginate, pectin, cellulose) composite materials for charge transfer applications requires effective surface functionalization and dopant matching to overcome limitations electron these dielectric materials. A promising approach is design a biomimetic nanocomposite material, coupled with Fe-carboxyl coordination chemistry photoinitiate radical polymerization polyaniline (PANI) uniform manner throughout templated...
As integrated circuit and logic devices continue to decrease, limiting induced defectivity during Chemical Mechanical Planarization (CMP) processes (polishing substrate cleaning) is imperative. Defects resulting from the CMP process can be classified as mechanical (i.e., scratching), chemical corrosion), or physiochemical adsorbed contaminants) according mechanism of formation. Traditionally, a contact cleaning method implements polyvinyl alcohol (PVA) brush transfer chemistry interest...
Increasing demand for improved Integrated Circuit (IC) technology has propelled the advancement from silicon as a semiconductor material to Wide Band Gap (WBG) materials (i.e., Silicon carbide (SiC), Gallium nitride (GaN)) due their intrinsic properties increased thermal stability, wear resistance, etc.). While these traits make WBGs ideal materials, Chemical Mechanical Planarization (CMP) process becomes difficult surfaces are more chemically inactive. To overcome this, CMP shifted...
Copper (Cu) removal from chemical mechanical polishing (CMP) waste is critical to maintaining discharge compliance with local municipalities and the Environmental Protection Agency (EPA). Typical treatment of this stream has followed two conventions: either coagulant-based precipitation or ion exchange (IX). 1 Many industries use iron-based coagulants for metal wastewater meet compliance. However, process often cumbersome, requires long settling times significant utilization, results in a...