A5007783777- GaN-based semiconductor devices and materials
- Metal and Thin Film Mechanics
- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Ga2O3 and related materials
- Electronic and Structural Properties of Oxides
- Semiconductor materials and interfaces
- Silicon Carbide Semiconductor Technologies
- Acoustic Wave Resonator Technologies
- ZnO doping and properties
- Quantum Computing Algorithms and Architecture
- Diamond and Carbon-based Materials Research
- Semiconductor Quantum Structures and Devices
- Intensive Care Unit Cognitive Disorders
- Near-Field Optical Microscopy
- Silicon Nanostructures and Photoluminescence
- Metal-Organic Frameworks: Synthesis and Applications
- Copper-based nanomaterials and applications
- Cardiac Arrest and Resuscitation
- Traumatic Brain Injury and Neurovascular Disturbances
- Plasmonic and Surface Plasmon Research
- Quantum Mechanics and Applications
- Advanced Photocatalysis Techniques
- Quantum Information and Cryptography
- Nanomaterials for catalytic reactions
Fujian University of Technology
2023-2024
Fujian Provincial Hospital
2022
Fujian Medical University
2022
Nanchang University
2021
South China Normal University
2014-2017
Sun Yat-sen University
2017
State Key Laboratory of Optoelectronic Materials and Technology
2017
National Taiwan University
2014
GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series film were grown (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology investigated multiple characterization techniques Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), synchrotron...
A well-designed magnetic rodlike MOF-based nanocomposite confining highly dispersed Pt single atoms and clusters (denoted as Fe3O4-NR@ZIF-8/Pt) is fabricated plays dual functional roles in high-efficient nanocatalysis magnetically actuated stirring. Results of the catalytic experiments for dye degradation, hydrogen production NaBH4, hydrogenation olefins show that Fe3O4-NR@ZIF-8/Pt exhibits enhanced performance absence external stirring, compared with those traditional systems, which need Of...
A series of cubic 3C–SiC/Si samples with different thicknesses grown by chemical vapor deposition (CVD) was studied Raman spectroscopy using laser excitation wavelengths plus spectral line shape analysis via two theoretical methods. Through comparative UV and visible measurements analysis, the TO intensity mainly affected penetration depth crystalline quality. The difference spectra were utilized to remove second-order signal from Si substrate. Using simulation on LO-phonon plasmon-coupling...
A series of indium nitride (InN) thin films have been grown on sapphire substrates by molecular beam epitaxy (MBE) technology under different growth conditions temperature and plasma power. Their structural, surface, optical properties are studied a variety techniques scanning electron microscopy, Hall effect, x-ray diffraction, photoluminescence (PL), Raman scattering, photoelectron spectroscopy (XPS), synchrotron radiation absorption near edge structure (XANES), so on. The lower carrier...
The microRaman scattering of 4H-SiC films, fabricated by low pressure chemical vapor deposition under different growth conditions, is investigated at temperatures ranging from 80K to 550K. effects conditions on E2(TO), E1(TO) and A1(LO) phonon mode frequencies are negligible. temperature dependences linewidth lifetime E2(TO) modes analyzed in terms an anharmonic damping effect induced thermal conditions. results show that the increases when quality sample improves. Unlike other phone modes,...
By combining spectroscopic ellipsometry (SE) and optical transmission (OT) characterization methods we have systematically investigated the influence of AlN intermediate layer transition on properties AlGaN epilayers grown sapphire by metalorganic chemical vapor deposition (MOCVD) method. Most dielectric functions III-nitrides obtained different research groups show significant band-tail absorption—which is not anticipated for such a direct band gap material. The are studied series...
MgZnO possesses a tunable bandgap and can be prepared at relatively low temperatures, making it suitable for developing optoelectronic devices. Mg
Boron doped aluminium nitride (B)AlN films are prepared on diamond substrate by using a co–sputtering system. The dielectric function of and with B contents 0%, 3%, 5% extracted the spectroscopic ellipsometry. Whereas having lower than considered important for improving crystalline electronic properties buffer layers - ≤3%, however, do not cause appreciable changes in its direct bandgaps.
Inspired by the protocol presented Bagherinezhad and Karimipour [Phys. Rev. A 67 (2003) 044302], which will be shown to insecure, we present a multipartite quantum secret sharing using reusable Greenberger—Horne—Zeilinger (GHZ) states. This is robust against eavesdropping could used for circumstance of many parties.
AbstractThe lack of parts k-space regions will lead to the missing some spatial frequencies and even generate artificial details in super-resolution imaging. We report a convenient scheme constructed with subwavelength grating supported by metal–dielectric multilayer realize imaging whole but without increment measuring complexity.KEYWORDS: Super-resolution imagingmetasurface Disclosure statementNo potential conflict interest was reported author(s).Additional informationFundingThis work is...
Indium cluster in InGaN epilayers prepared with different H2-treating times was investigated. In the form of lower atom bonds evidenced by Raman spectra. Carrier lifetime found to increase time.
Mg0.06Zn0.94O films are epitaxially grown at 350 to 650 °C. Depolarization effect was found occurs ~390 nm, while the thickness non-uniformity increases with growth temperature, ascribed increased Mg incorporation into hexagonal ZnO phase.