A5101543026- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena
- Advanced Fiber Optic Sensors
- Semiconductor materials and devices
- Photonic and Optical Devices
- Advanced Semiconductor Detectors and Materials
- Advancements in Semiconductor Devices and Circuit Design
- Photonic Crystal and Fiber Optics
- Semiconductor Lasers and Optical Devices
- Reservoir Engineering and Simulation Methods
- Advanced Optical Sensing Technologies
- Enhanced Oil Recovery Techniques
- Optical Systems and Laser Technology
- Electronic and Structural Properties of Oxides
- Optical Network Technologies
- Advanced Fiber Laser Technologies
- Structural Health Monitoring Techniques
- Railway Engineering and Dynamics
- Hydraulic Fracturing and Reservoir Analysis
- Analytical Chemistry and Sensors
- Surface and Thin Film Phenomena
- Thermal properties of materials
- Power System Reliability and Maintenance
- Transplantation: Methods and Outcomes
- Ocular and Laser Science Research
Ningde Normal University
2025
China Three Gorges University
2021-2023
Research Institute of Petroleum Exploration and Development
2020-2022
China South Industries Group (China)
2008-2011
Huazhong University of Science and Technology
2008-2009
Heilongjiang University
2007-2008
University of Maryland, College Park
1991-2000
Texas Instruments (United States)
1988-1990
Princeton University
1985-1988
We report experiments in which we determine the rate of LO-phonon emission by hot electrons. High-energy tails photoluminescence spectra are used to measure distributions electrons, heated both optically and electrically. Comparison resultant temperatures shows that virtually all excess kinetic energy an excited electron-hole pair stays electron system. Both this result analysis themselves show scattering is much faster than emission. The measured agreement with theory. Hot phonons do not...
Background: The stable, safe, and reliable operation of the electric actuator valve system is crucial in industrial production. However, its faults can lead to production interruptions, equipment damage, increased costs. Therefore, detecting analyzing causes fault modes for exploring methods reduce their occurrence ensuring normal actuators. Methods: Taking IQ20-F14-A from Rotork, UK, as a reference, this paper analyzes phase loss mode three aspects: software, circuitry, external conditions....
The conductance method has been used to measure the density of interface states ZnS/Hg0.775Cd0.225Te metal-insulator-semiconductor (MIS) system with three different HgCdTe surface treatments. It is found that fast increases from ∼1011 eV−1 cm−2 at conduction-band minimum ∼1013 near valence-band maximum. In addition, located in lower part band gap communicate valence so efficiently effective reduced. Our observations explain why p-type MIS photodiode superior n-type version terms breakdown...
The online static voltage stability assessment (VSA) has attracted more attention due to the complexity of operating conditions modern power systems. Considering that first category error VSA misclassification serious influence than second error, an integrated data-driven scheme for real-time with restriction is proposed make it practical industrial applications. In scheme, bagging nearest-neighbor prediction independence test (BNNPT) employed in feature selection process, and Neyman-Pearson...
We have studied photoluminescence from GaAs/Al0.3Ga0.7 As modulation-doped single heterojunctions, using excitation sources infrared to ultraviolet near-liquid-helium temperature. The spectra a strong interface component, accompanied by bulk GaAs and AlGaAs band-gap luminescence. Using instead of as the excitation, signal is greatly enhanced relative can be shifted higher energies when semitransparent front gate positively biased. Our observations indicate that luminescence comes...
We report the first observation of negative persistent photoconductivity at 4.2 K in an n-channel modulation doped GaAs/Al0.33Ga0.67As single heterostructure, where two-dimensional electrons have a mobility ∼550 000 cm2/V s when density is ∼3.0×1011 cm−2. Based on extensive magnetotransport measurements, we conclude that effect comes from time dependence (1) annihilation by photoexcited holes, and (2) trapping de-trapping shallow donors Al0.33Ga0.67As. A model quantitatively explains...
We present device characteristics of a field-effect, unipolar, resonant tunneling transistor. An oscillatory current in the transfer is observed for first time. Our observation confirms recent hypothesis that mere three-to-two dimensional can occur when scattering rate less than attempt frequency electrons quantum well.
Infrared photoluminescence has been used to study the band-gap energy of InAs1−xSbx digital superlattices and band alignment InAs1−xSbx/AlSb quantum wells at 5 K. It is found that alloys have a smaller effective gap than random alloys. In addition, valence offset between type-II InAs/AlSb determined be 130 meV. This number reduces as Sb mole fraction in increased, becomes type I when x>0.15.
A tunneling field-effect transistor with an ultrashort channel-length of 25 nm has been experimentally realized using InAs/AlSb heterostructures. The conduction between the source and drain is through a sequential process, including drift-diffusion mechanisms. According to its operating principle, inherently free conventional short-channel effects. results demonstrate new scheme building nanometer-scale transistors.
We have investigated magneto-transport and cyclotron resonance (CR) of two-dimensional electron gas in silicon δ-doped p-InSb under a magnetic field up to 12 T at 4.2 K. Because there are multiple subbands occupied, Shubnikov–de Haas oscillations show beating behavior. The CR spectra also display several peaks originating from different subbands. Effective masses electrons associated with the lowest three can therefore be directly determined, they excellent agreement self-consistent...
A spatial and wavelength division multiplexing fiber Bragg grating (FBG) sensing system for monitor the temperature pressure (T-P) of hot water pipeline in petrochemical factory is reported. The FBG has 72 channels independently, it provides capability to large number sensors at same time. resolution 0.1°C 0.01 MPa with a measurement bandwidth 150 Hz been achieved.
An experimental realization and application of a new quantum transistor is reported herein. The conduction mechanism resonant-tunneling process between regions two-dimensional density states. As result, the displays current-voltage characteristics. A static memory cell using single demonstrated.
The authors report the observation of an incoherent tunnelling phenomenon in Al/ZnS/p-Hg1-xCdxTe metal-insulator-semiconductor (MIS) capacitors temperature range 15<or=T<or=110 K. Under thermal equilibrium, both capacitance-voltage and conductance-voltage characteristics show strong oscillations when MIS capacitor is biased into inversion. data can be understood as being due to electron between three-dimensional (3D) valence band p-type Hg1-xCdxTe 2D inversion layers at interface ZnS. This...
We have observed incoherent tunneling in $\frac{\mathrm{Al}}{\frac{\mathrm{ZnS}}{{\mathrm{Hg}}_{1\ensuremath{-}x}{\mathrm{Cd}}_{x}\mathrm{Te}}}$ metal-insulator-semiconductor (MIS) capacitors below $T\ensuremath{\sim}110$ K. Under thermal equilibrium, both the conductance-voltage and capacitance-voltage characteristics show strong oscillations when MIS is biased into inversion regime. On basis of temperature dependence oscillation amplitudes, we explain data by electrons from...