A5059325548- Photonic and Optical Devices
- Optical Network Technologies
- Advanced Fiber Laser Technologies
- Semiconductor Lasers and Optical Devices
- Mechanical and Optical Resonators
- Advanced Photonic Communication Systems
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Geophysical Methods and Applications
- Neural Networks and Reservoir Computing
- Seismology and Earthquake Studies
- Force Microscopy Techniques and Applications
- Photonic Crystals and Applications
- GaN-based semiconductor devices and materials
- Electrostatic Discharge in Electronics
- Advanced Fiber Optic Sensors
- Seismic Waves and Analysis
University of California, San Diego
2016-2021
Samsung (South Korea)
2018
We experimentally demonstrate a silicon photonic chip-scale 16-channel wavelength division multiplexer (WDM) operating in the O-band. The chip consists of common-input bus waveguide integrated with sequence 16 spectral add-drop filters implemented by 4-port contra-directional Bragg couplers and resonant cladding modulated perturbations. combination these features reduces bandwidth improves crosstalk. An apodization perturbations between add/drop waveguides is used to optimize strength...
We report an advanced Fourier transform spectrometer (FTS) on silicon with significant improvement compared our previous demonstration in [ Nat. Commun. 9 , 665 ( 2018 ) 2041-1723 ]. retrieve a broadband spectrum (7 THz around 193 THz) 0.11 or sub nm resolution, more than 3 times higher previously demonstrated Moreover, it effectively solves the issue of fabrication variation waveguide width, which is common photonics. The structure balanced Mach–Zehnder interferometer 10 cm long serpentine...
Current silicon waveguide Bragg gratings typically introduce perturbation to the optical mode in form of modulation width or cladding. However, since such a approach is limited weak perturbations avoid intolerable scattering loss and higher-order modal coupling, it difficult produce ultra-wide stopbands. In this Letter, we report an ultra-compact grating device with strong by etching nanoholes core enable ultra-large stopband apodization achieved proper location nanoholes. With approach, 15...
Research thrusts in silicon photonics are developing control operations using higher order waveguide modes for next generation high-bandwidth communication systems. In this context, devices allowing optical processing of multiple can reduce architecture complexity and enable flexible on-chip networks. We propose demonstrate a hybrid resonator dually resonant at the 1st 2nd waveguide. observe 8 dB extinction ratio modal conversion range 20 nm quasi-TE mode input.
We present an experimental demonstration of notch filters with arbitrary center wavelengths capable tunable analog output power values varying between full extinction 15 and 0 dB. Each filter is composed highly modular apodized four-port Bragg add/drop to reduce the crosstalk concatenated devices. The constructed photonic integrated circuit experimentally demonstrates spectra shaping using four independent filters. supports a bandwidth <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"...
We demonstrate a laser tunable in intensity with gigahertz tuning speed based on III/V reflective semiconductor optical amplifier (RSOA) coupled to silicon photonic chip. The chip contains Bragg-based Fabry-Perot resonator form passive bandpass filter within its stopband enable single-mode operation of the laser. observe side mode suppression ratio 43 dB, linewidth 790 kHz, and an output power 1.65 mW around 1530 nm. also investigate using micro-ball lens as alternative coupling method between RSOA
We investigate the influence of second-harmonic generation efficiency through choice dielectric cladding for a GaN integrated ring resonator. Our devices suggest can enhance or inhibit intrinsic nonlinearities electric field induced second harmonic (EFISH) contribution.
We demonstrate a multimode device simultaneously resonant at the 1st and 2nd order modes of adjacent silicon waveguides. This introduces design flexibility represents an interesting alternative to traditional mode conversion devices.
This paper reports an un-expected latchup scenario identified when utilizing the forward body bias (FBB) technique in fully depleted silicon-on-insulator (FDSOI) technology. It was found that a parasitic silicon controlled rectifier (SCR) can be formed between p-well/deep n-well/p-sub/n-well which is different from conventional SCR observed bulk CMOS technology (p+/n-well/p-sub/n+). The vertical injection mechanism p-well emitter to deep n-well base and p-sub base, larger area, overdrive...
The current optical technology is costly, bulky, fragile in their alignment, and difficult to integrate with electronic systems, both terms of the fabrication process delivery retrieval massive volumes data that elements can process. Our most recent work emphasizes construction subsystems directly onchip, same lithographic tools as surrounding electronics. Arranged a regular pattern, subwavelength features act metamaterial whose properties are controlled by density geometry pattern its...