Routes to semi-stable phases of Ga2O3 are the subject extended discussions based on review growth methods, conditions, and precursors in works that report other than thermally stable β phase. The focus here is mist chemical vapor deposition because it has produced single-phase α, γ, ε (or κ) terms substrate materials, features this method for phase control emphasized. Recent reports by technology give a deeper understanding how determine phases, increasing opportunities fully utilize novel...

α-Ga2O3 is a metastable phase of gallium oxide (Ga2O3) and important for application in solar-blind region optoelectronic devices. High-quality thin films can be grown by mist chemical vapor deposition (mist-CVD). We systematically investigate the growth mechanism mist-CVD using acetylacetonated Ga source solutions. propose which acetylacetonate ligands anchor to surface hydroxyls Ga–O bonds are formed ligand exchange mechanism. The origin oxygen atoms impurity concentration profiles...

Ga(1-x)In(x)N(y)As(1-y) is a promising material system for the fabrication of inexpensive "last-mile" optoelectronic components. However, details its atomic arrangement and relationship to observed optical properties not fully known. Particularly, blueshift emission wavelength after annealing. In this work, we use x-ray absorption fine structure study chemical environment around N atoms in before We find that as-grown molecular beam epitaxy consists nearly random distribution atoms, while...

Abstract The growth mechanisms of zinc oxide and sulfide films by mist chemical vapor deposition (mist-CVD) were experimentally investigated from the viewpoint behaviors reactions. proper model, either vaporization or Leidenfrost was studied supplying two kinds mists with different sources, such as H 2 16 O 18 for ZnO ZnCl thiourea ZnS growth. Moreover, origin oxygen atoms using a quantitative analysis. role chloro complex in aqueous solutions also examined systematic studies.

Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation M. Kawamura, Yoshio Nakahara, Mitsuhiro Ohse, Maki Kumei, K. Uno, Hidefumi Sakamoto, Keiichi Kimura, Ichiro Tanaka; Investigation of polysilsesquioxane as a gate dielectric material for organic field-effect transistors. Appl. Phys. Lett. 30 July 2012; 101 (5): 053311. https://doi.org/10.1063/1.4742891 Download...

Abstract Zinc sulfide (ZnS) films were successfully grown by using mist chemical vapor deposition (mist‐CVD) with fine‐channel susceptor made of quartz. For the investigation growth dynamics, two types generators and susceptors prepared distribu¬tion profiles film thickness examined. Thermal efficiency depends on heat¬penetration line‐velocity mists, which are influenced gap‐height susceptors. Using larger size mists requires higher thermal in to obtain a flat distribution. This result...

α ‐Ga 2 O 3 is a suitable material for UV‐C optical devices owing to its absorption edge wavelength. In this study, thin films are grown on c‐, a‐, m‐, n‐, and r‐oriented sapphire substrates by mist chemical vapor deposition. Furthermore, their structural fluctuations, (normal direction of the surface) (rotational surface), examined. As result, a‐oriented exhibit smallest . Based results previous examination, metal–semiconductor–metal (MSM) photodetectors fabricated using c‐ photoconducting...

Abstract We investigated the dominant factors affecting Al composition of α -(AlGa) 2 O 3 alloy thin films in mist CVD, focusing on acetylacetonation source solutions. The Al–acetylacetonate (acac) complex formation time was evaluated using Fourier-transform IR spectroscopy to examine effectiveness heating during stirring Then, were grown solutions which state acac changed by adding ammonia water and/or hydrochloric acid, and increased with increasing pH value due acceleration...

We have investigated contact and channel resistances of organic field-effect transistors (FETs) based on benzodithiophene (BDT)-dimer films deposited thin pentacene layers used as crystallinity control (CCLs). The resistance source/drain electrodes made conductive instead Au has been reduced for pentacene-CCL/BDT-dimer FETs; the carrier mobility improved to 1.2 cm2 V−1 s−1 at maximum. Because FETs is found be lower than that reference FETs, transport in BDT-dimer more important CCLs high mobility.

We fabricated pentacene-based memory field-effect transistors (FETs) in which a monolayer of semiconductor colloidal nano-dots (NDs) is embedded as floating gate. After sufficiently large writing voltage was applied on the control gate, FETs showed positive threshold ( V th ) shift that attributed to electrons trapped NDs. The measured function voltage, and it shown minimum for with small NDs significantly larger than ones. This result supports proposed model effect tunneled from nearby...

Polysilsesquioxane (PSQ) is a low-temperature curable polymer that compatible with low-cost plastic substrates. We cured PSQ gate dielectric layers by irradiation ultraviolet light at ~60 °C, and used them for 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) thin film transistors (TFTs). The fabricated TFTs have shown the maximum average hole mobility of 1.3 0.78 ± 0.3 cm2V-1s-1, which are comparable to those previously reported using single-crystalline TIPS-pentacene...

We fabricated organic memory field-effect transistors (FETs) using PbS colloidal nano-dots (NDs) dispersed in thin poly(methyl methacrylate) (PMMA) layers inserted between gate insulators (SiO 2 ) and pentacene active as floating gates. The NDs were chloroform solution with PMMA, spin-coated on SiO surfaces. FETs showed significantly large threshold voltage shifts of 64.5 V at maximum after a writing 100 was applied to their control gates, carrier mobility 0.36 cm -1 s , which comparable...

Polysilsesquioxane (PSQ) comprising 3-methacryloxypropyl groups was investigated as an ultraviolet (UV)-light curable gate dielectric-material for pentacene thin film transistors (TFTs). The surface of UV-light cured PSQ films smoother than that thermally ones, and the layers deposited on UV-Iight consisted larger grains. However, carrier mobility TFTs using lower ones. It shown cross-linker molecules, which were only added to films, worked a major mobility-limiting factor TFTs.

Abstract Photoluminescence (PL) thermal quenching properties of zinc sulfide (ZnS) films, which were grown by mist chemical vapor deposition (mist‐CVD), systematically investigated. The samples from thiourea‐based solutions at various temperatures. Strong PL emissions related to S vacancies observed the sample 600 and 700 °C their very small. spectra 500 contains oxide (ZnO) peaks. ZnO peaks has almost no energy shift with increase temperature. This would be due mismatch expansion...

Abstract α -Ga 2 O 3 is a semi-stable phase of Ga and known as an ultra-wide-bandgap semiconductor material. -(AlGa) alloys are important for their applications in electronic optoelectronic devices. We investigated the growth mechanism process by mist chemical vapor deposition using acetylacetonated Al aqueous solutions. The contribution ions to epitaxial was investigated. effects anchoring on mosaic spread were experimentally evaluated. Investigating <mml:math...

We fabricated organic field-effect transistors (OFETs) based on benzodithiophene (BDT)-dimer films by vacuum evaporation. The surface of the BDT-dimer deposited a SiO2 gate insulator was so rough that excellent FET characteristics were not obtained. However, morphology poly(methyl methacrylate) buffer layers significantly improved, and dense grains submicron size formed. Grain increased from scale to micron reducing growth rate 0.035 0.02 nm/s. OFETs have shown p-type with carrier mobility...

Pentacene thin-film transistors (TFTs) were fabricated with ultraviolet-light (UV)-cured polysilsesquioxane (PSQ) gate dielectric layers using cross-linker molecules or without ester groups. To polymerize PSQ groups, thiol-ene reaction was adopted. The TFTs comprising ester-free cross-linkers showed a higher carrier mobility than the cross-linked which had large electric dipole moments that limited mobility. It demonstrated is more suitable conventional radical for UV-cured small constant.

Thermal quenching properties of disordered superlattices (d-SLs) are experimentally investigated. Three types d-SLs with (1) various band-gap differences, (2) unit lengths disorder, and (3) appearance probabilities layers used for experiments. photoluminescence intensities investigated the estimation strength disorder. Consistent results obtained in that thermal becomes small increasing disorder each type d-SL. Abrupt changes characteristics observed at type-I/type-II transitions...

The radiative efficiency of dilute nitride GaInNAs alloys is improved by thermal annealing. However, the band gap these found to significantly blueshift. structural changes occur during In this study, we studied local atomic configuration around atoms using fluorescence X-ray absorption fine structure spectroscopy. By comparing radial distribution functions as-grown and annealed thin films, it was that number surrounding N increases after

Zinc oxide (ZnO) thick film growth on n-GaN using an electrodeposition technique was investigated. Although the reaction temperature is about 70 °C in cathodic electrodeposition, ZnO can grow epitaxially GaN owing to their small lattice mismatch. However, quality of grown too high for electrons be supplied from substrate. As a consequence, continue only 50 min. On other hand, case highly oriented pyrolytic graphite (HOPG), electrochemical over 15 h supply via grain boundaries or defects. For...