A5075600435- Advanced Memory and Neural Computing
- Transition Metal Oxide Nanomaterials
- Electronic and Structural Properties of Oxides
- Ferroelectric and Negative Capacitance Devices
- Phase-change materials and chalcogenides
- Metal and Thin Film Mechanics
- Diamond and Carbon-based Materials Research
- Magnetic and transport properties of perovskites and related materials
- ZnO doping and properties
- Perovskite Materials and Applications
- Neural dynamics and brain function
- Neural Networks and Reservoir Computing
- Plasma Diagnostics and Applications
- Organic and Molecular Conductors Research
- Copper Interconnects and Reliability
- Solid-state spectroscopy and crystallography
- Advanced Condensed Matter Physics
- Photoreceptor and optogenetics research
- Geophysics and Sensor Technology
- Gas Sensing Nanomaterials and Sensors
- Machine Learning in Materials Science
- Ga2O3 and related materials
- Engine and Fuel Emissions
- Porphyrin and Phthalocyanine Chemistry
- Spectroscopy and Quantum Chemical Studies
Nantes Université
2008-2024
Institut des Matériaux Jean Rouxel
2014-2024
Centre National de la Recherche Scientifique
2012-2024
The University of Tokyo
2023
Université de Rennes
2023
Université Paris-Sud
2014
Laboratoire de physique des Solides
2014
National University of General San Martín
2014
During the last half century, tremendous development of computers based on von Neumann architecture has led to revolution information technology. However, are outperformed by mammal brain in numerous data‐processing applications such as pattern recognition and data mining. Neuromorphic engineering aims mimic brain‐like behavior through implementation artificial neural networks combination a large number neurons massively interconnected an even larger synapses. In order effectively implement...
Resistive random access memories (ReRAM) form an emerging type of non‐volatile memories, based on electrically driven resistive switching (RS) active material. This Feature Article focuses a broad class ReRAM where the material is Mott insulator or correlated system. These materials can indeed undergo various insulator‐to‐metal transitions (IMT) in response to external perturbations such as electronic doping temperature. IMT explain most observed insulators as, for example, Joule heating...
One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal to incorporate strong correlation effects into the realm electronics. In fact, taming Mott insulator-to-metal transition (IMT), which driven by electronic effects, holds promise a commutation speed set quantum transition, with negligible power dissipation. this context, one possible route control electrostatically dope systems using dielectrics, FET-like devices....
Mott insulator to metal transitions under an electric field are currently the subject of numerous fundamental and applied studies. This puzzling effect, which involves nontrivial out-of-equilibrium effects in correlated systems, is indeed at play operation a new class electronic memories, ``Mott memories.'' However, combined thermal difficult disentangle insulators undergoing such transitions. We report here comparison between properties canonical model built on realistic two-dimensional...
A major challenge in the field of neurocomputing is to mimic brain's behavior by implementing artificial synapses and neurons directly hardware. Toward that purpose, many researchers are exploring potential new materials physical phenomena. Recently, a concept Leaky Integrate Fire (LIF) neuron was proposed based on electric Mott transition inorganic insulator GaTa4Se8. In this work, we report LIF simple two-terminal devices three chemically very different compounds, oxide (V0.89Cr0.11)2O3,...
The AM4Q8 family of chalcogenide Mott insulator compounds exhibit an electric pulse induced resistive switching that could be used in data storage applications as memories. Depending on the applied field, this transition is either volatile or non-volatile. This study demonstrates theory established for can to understand non-volatile transition. It leads propose a simple model SET and RESET transitions. In addition, we show alternation short high voltage multi-pulses with long low single...
Mott insulators exhibit an electric-field-induced insulator-metal transition, which may be used to implement artificial neurons. This work focuses on the poorly understood relaxation of (filamentary) metallic state back insulating state. Extending their previous model ``leaky-integrate-and-fire neuron'' include electroelastic effects, authors show that strong electrical pulsing increase time by thickening filaments. Numerical simulations agree qualitatively with recent experiments. sheds...
Resistive random-access memory (ReRAM) made of organic materials has recently received much attention for application in flexible devices. In the latter, resistive switching is usually obtained thanks to electrochemical effects or charge trapping. This work shows that, under electric pulses, crystalline molecular Mott insulator [Au(Et-thiazdt)2] exhibits a based on an insulator-to-metal transition (IMT). Electric pulses exceeding threshold field few kilovolts/centimeter induce volatile...
Nowadays, materials science is moving towards the understanding and control of in nonequilibrium states by making use perturbative techniques to investigate their dynamical responses. From this perspective, ultrashort light pulses seems be a relevant approach as it can selectively address different degrees freedom solid-state systems more particularly electrons. Such method help decipher physical phenomena arising from electronic correlations complements conventional methodology where phase...
We report here on resistive switching measurements GaMo 4 S 8 a lacunar spinel compound with tetrahedral Mo clusters filled 11 electrons. Alike other clustered compounds 7 or electrons per cluster, this narrow gap Mott Insulator exhibits both volatile and non-volatile unipolar switching. found that the appears above threshold electric field in kV/cm range. For much larger than threshold, becomes non-volatile. Successive pulses allow back forth between high low resistance states. All these...
The chalcogenide compound GaV4S8 is promising for applications as active materials in non-volatile memory applications. We report here a comprehensive study on the thin-film deposition of this using stoichiometric target and H2S/Ar reactive sputtering. show that fraction 0.5% to 1% H2S plasma sufficient compensate sulfur deficiency appears films deposited pure Ar plasma. This method allows avoiding addition elemental during annealing treatment required obtain crystallized layer. A simple...
Triggering new stable macroscopic orders in materials by ultrafast optical or terahertz pump pulses is a difficult challenge, complicated the interplay between multiscale microscopic mechanisms, and excitation profiles samples. In particular, differences two types of excitations are still unclear. this article, we compare response on acoustic timescale V2O3 Paramagnetic Metallic (PM) thin film excited (THz) an pump, at room temperature. We show that penetration depth deposited energy has...