Spintronic devices use spin instead of charge to process information and are widely considered as promising candidates for next-generation electronic devices. In past decades, the main motivation in spintronics has been discover new mechanisms novel material systems improve both device performance application prospects spintronics. Recently, researchers have found that ferrimagnetic materials—in which sublattices coupled antiferromagnetically—offer an emerging platform realizing...

The data transfer bottleneck in Von Neumann architecture owing to the separation between processor and memory hinders development of high-performance computing. computing (CIM) concept is widely considered as a promising solution for overcoming this issue. In article, we present time-domain CIM (TD-CIM) scheme using spintronics, which can be applied construct energy-efficient convolutional neural network (CNN). Basic Boolean logic operations are implemented through recording bit-line output...

As the basic storage unit of spin transfer torque magnetic random-access memory (STT-MRAM), perpendicular anisotropy (PMA) tunnel junction (MTJ) has been extensively studied in recent years. Lowering critical switching current and improving data retention are two crucial pathways to optimize performance STT-MRAM. However, conventional MTJ can merely achieve both. In this paper, we present a physics-based compact model Ta/CoFeB/MgO PMA double-barrier (DMTJ) with enhanced thermal stability...

In spintronics, ferrimagnets continue to draw intense attention for their ultrafast dynamics, but reduced magnetization near the compensation point plus small spin-mixing conductance do not help spin-orbit torque in ferrimagnet/heavy-metal multilayers. This study uses two heavy metals with opposite spin Hall angles flanking a typical ferrimagnetic alloy achieve effective enhancement of angle, as well stable, controllable multilevel current-induced switching based on proposed heterostructure....

Computing in memory (CIM) is a promising candidate for high throughput and energy-efficient data-driven applications, which mitigates the well-known bottleneck Von Neumann architecture. In this paper, we present reconfigurable bit-serial operation using toggle spin-orbit torque magnetic random access (TSOT-MRAM) to perform computation completely bit-cell array instead of peripheral circuit. This CIM (BSCIM) scheme achieves higher energy efficiency CIM. First, basic Boolean logic operations...

As a common water pollutant, ammonia nitrogen poses serious risk to human health and the ecological environment. Therefore, it is important develop simple efficient sensing scheme achieve accurate detection of nitrogen. Here, we report fabrication electrode for electrochemical synthesis platinum–zinc alloy nanoflowers (PtZn NFs) on surface carbon cloth. The obtained PtZn NFs/CC was applied by differential pulse voltammetry (DPV). enhanced electrocatalytic activity NFs larger active area...

Information storage and transfer via current-induced domain wall (DW) motions exhibit significant density-speed-energy advantages, which inspires numerous emerging devices circuits, such as racetrack memory (RM). However, the bi-directional propagation of DWs in conventional tape-shaped nanowire will lead to data overflow issue, implicitly deteriorating density operational performances. In this paper, we propose a non-volatile cache design based on spin-orbit torque-driven ring-shaped RM....

While spintronic memories, for example, spin transfer torque magnetic random access memory (STT-MRAM), have shown huge potential building next-generation due to their attractive characteristics, the relatively large write latency and deficient read mechanism preclude further application emerging concepts, such as in-memory-processing neuromorphic computing. A toggle (TST) MRAM combining STT orbit (SOT) has recently been proposed alleviate issue. However, sensing featuring a good balance...

Low on/off ratio gravely hinders the application of magnetoresistance (MR) devices for accurate and reliable data fetch. In this paper, a rectified tunnel MR (R-TMR) device is fabricated by integrating perpendicular-magnetic-anisotropy magnetic junction (PMA MTJ) Schottky diode. High ratio, intrinsic non-volatility multi-dimensional regulation capabilities can be obtained, which makes emerging spintronic suitable in-memory computing (IMC). By reversing rectifying direction diode tuning...

Abstract Magnetoresistance (MR) effects not only have great applications in magnetic sensors, hard disk drive (HDD) read heads, and random access memory (MRAM), but also are expected to develop next‐generation computing systems. Recently, the MR ratio is found be significantly increased diode‐enhanced (DEMR) devices by coupling Hall effect or anomalous of materials nonlinear transport property diodes. However, these cannot satisfy requirement high sensitivity at low field small working...

In this letter, we propose a 3D spintronic device stacked by ferrimagnetic (FIM) alloy CoTb layers with thickness gradient for realizing multi-bit storage and efficient in-memory computing (IMC). Firstly, spin-orbit torque (SOT) induced multi-level magnetization switching of Pt/CoTb/W/CoTb/Pt stack is experimentally achieved micromagnetically modeled. Furthermore, 3D-FIM IMC multiple constructed analyzed. Its functionalities ultra-dense reconfigurable logic are both validated through...

The magnetic domain is a promising solution for realizing the next-generation information storage, example, racetrack memory (RM). However, nucleation and wall (DW) motion are limited by tunnel junctions (MTJs) as write read heads. Moreover, size of single limits further increase in storage density. In this paper, we report cross structure efficient manipulations. With help voltage control anisotropy (VCMA) effect antiferromagnetic/ferromagnetic (AFM/FM) couplings, fast, low-power, highly...

Ultrafast current-driven domain wall (DW) motions have been realized in ferrimagnetic (FiM) nanowires. However, the FiM dynamics can be significantly affected by Joule-heating. In this work, we propose a highly efficient XNOR logic gate properly leveraging thermal effect on DW motions. Its functionality and advantageous performance confirmed micromagnetic simulations. Moreover, majority full adder functions also reconfigured based proposed scheme. Lastly, fully binary neural network (BNN) is...

All spin logic device (ASLD) is a promising option to realize the ultra-low power computing systems. However, low transport efficiency and non-local switching of detector have become two key challenges ASLD. In this paper, we analyze energy consumption graphene based ASLD with ferromagnetic layer assistance by voltage control magnetic anisotropy (VCMA) effect. This structure has significant potential towards consumption: applied can not only shorten time layer, but also decreases critical...

The considerable power consumption on logic and memory circuit system will be an unavoidable bottleneck with the shrinking of complementary metal oxide semiconductor (CMOS) technology size. One promising solution is to build non-volatile spintronic device, e.g. spin transfer torque magnetic random access (STT-MRAM). basic storage unit STT-MRAM, i.e. tunnel junction (MTJ), has thus been extensively studied. Double-barrier MTJ (DMTJ), as optimized structure, enhances STT effect a second MgO...

Computing-in-memory (CIM) is widely studied to solve the Von Neumann bottleneck, which improves energy-efficient computing. In this work, we propose a CIM with series bit-cell (SBCIM) scheme, can perform multi-bit analog multiplication in spin-transfer torque magnetic random access memory (STT-MRAM). Utilizing proposed structure consisting of three transistors and one tunnel junction (MTJ), multiple bit-cells on column be connected overcome inherent low on/off ratio MTJ CIM. Then, by...

In-memory computing is highly promising to address the processor-memory data transfer bottleneck in current computational paradigm. We firstly propose a timedomain in-memory (TIMC) scheme based on highspeed low-power toggle spin torque random access memory (TST-MRAM). The difference of voltage drops bitline caused by simultaneously-activated bit-cells reflected time domain. Reconfigurable logic operations can be performed utilizing D flip-flops (DFFs) record outputs at different moments. In...

Magnetoresistance (MR) effects have been intensively investigated and widely recognized as an effective path for realizing information sensing, storage, processing. In particular, giant MR (GMR) effect discovered in ferromagnetic/nonmagnetic multilayers or junctions exhibits high magnetic-field sensitivity has successfully applied magnetic sensors hard disk drive (HDD) read heads. However, the relatively small ratio becomes Achilles' Heel its further application high-reliability electronic...

This paper proposes a novel in-memory computing (IMC) scheme based on toggle spin torque magnetic random access memory (TST-MRAM), called TST-IMC, which makes full use of the unique TST writing mechanism. In this scheme, all results are directly written in bit-cells without transferring data out array. Varied Boolean logic operations, such as, NAND, NOR and XOR, can be achieved by specially configuring decision cells. We also implement three-input majority through replacing cell with datum...

Spin transfer torque magnetic random access memory (STT-MRAM) has shown great potential in building future universal memory. However, the core of STT-MRAM, conventional perpendicular magnetization anisotropy (PMA) tunnel junction (MTJ) is facing challenges keeping high thermal stability factor (ΔE), which essential for reliable data storage. Despite solving problem ΔE, shape (PSA) MTJ still drawbacks slow STT switching and breakdown risk. In this paper, we proposed a spin obit...

This paper proposes a novel voltage sensing scheme in order to improve reliability and reduce read delay for spin transfer torque magnetic random access memory (STT-MRAM). utilizes two reference voltages form difference from voltage. The states of tunnel junction (MTJ) cells are then accurately by three-input sense amplifier. Simulation results using 28nm Complementary Metal Oxide Semiconductor (CMOS) technology show that time can be reduced 0.7ns with 100mV at 1V supply Read is 83.5% 53.3%...

Polyaniline is a promising material for the development of high performance flexible supercapacitor devices. However, loose structure polyaniline materials and intermolecular transport impedance between molecular chains remain significant technical barriers, particularly at loading density. In this study, we developed copper ion doped electrode (Cu-PANI@CC) on carbon cloth using simple one-step in-situ electrochemical deposition method. The properties were investigated via different testing...