Hyuk Jin Kim

ORCID: 0000-0003-4620-9443
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About
Contact & Profiles
Research Areas
  • 2D Materials and Applications
  • ZnO doping and properties
  • Chalcogenide Semiconductor Thin Films
  • Transition Metal Oxide Nanomaterials
  • Thin-Film Transistor Technologies
  • Advanced Sensor and Energy Harvesting Materials
  • MXene and MAX Phase Materials
  • Electronic and Structural Properties of Oxides
  • Perovskite Materials and Applications
  • Machine Learning in Materials Science
  • Semiconductor materials and devices
  • Advanced Materials and Mechanics
  • Advanced Thermoelectric Materials and Devices
  • Multiferroics and related materials
  • Gas Sensing Nanomaterials and Sensors
  • Advanced Chemical Sensor Technologies
  • Graphene research and applications
  • Nanomaterials and Printing Technologies
  • Quantum Dots Synthesis And Properties
  • Organic and Molecular Conductors Research
  • Analytical Chemistry and Sensors
  • Thermal Radiation and Cooling Technologies
  • Advanced Semiconductor Detectors and Materials
  • Heusler alloys: electronic and magnetic properties
  • Force Microscopy Techniques and Applications

Materials Science & Engineering
2025

Seoul National University
2013-2025

University of Seoul
2015-2024

Electronics and Telecommunications Research Institute
2016

In situ reflective high-energy electron diffraction (RHEED) is widely used to monitor the surface crystalline state during thin-film growth by molecular beam epitaxy (MBE) and pulsed laser deposition. With recent development of machine learning (ML), ML-assisted analysis RHEED videos aids in interpreting complete data oxide thin films. The quantitative allows us characterize categorize modes step step, extract hidden knowledge epitaxial film process. this study, we employed method...

10.1186/s40580-023-00359-5 article EN cc-by Nano Convergence 2023-02-20

Abstract Transition metal dichalcogenides, as a kind of 2D material, are suitable for near‐infrared to visible photodetection owing the bandgaps ranging from 1.0 2.0 eV. However, limited light absorption restricts photoresponsivity due ultrathin thickness materials. 3D tubular structures offer solution solve problem because trapping effect which can enhance optical absorption. In this work, thanks mechanical flexibility materials, self‐rolled‐up technology is applied build up structure and...

10.1002/smll.201902528 article EN Small 2019-09-04

Micro-light-emitting diodes (μLEDs) have gained significant interest as an activation source for gas sensors owing to their advantages, including room temperature operation and low power consumption. However, despite these benefits, challenges still exist such a limited range of detectable gases slow response. In this study, we present blue μLED-integrated light-activated sensor array based on SnO

10.1007/s40820-024-01486-2 article EN cc-by Nano-Micro Letters 2024-08-08

Nanoscale-layered ferromagnets have demonstrated fascinating two-dimensional magnetism down to atomic layers, providing a peculiar playground of spin orders for investigating fundamental physics and spintronic applications. However, the strategy growing films with designed magnetic properties is not well established yet. Herein, we present versatile method control Curie temperature (TC) anisotropy during growth ultrathin Cr2Te3 films. We demonstrate an increase TC from 165 310 K in sync...

10.1021/acsanm.1c00391 article EN ACS Applied Nano Materials 2021-04-15

This study examined the structural, chemical, and electrical properties of solution-processed (Zn,Sn)O3 (ZTO) films with various Sn/[Zn+Sn] ratios for potential applications to large-area flat panel displays. ZTO a Zn-rich composition had polycrystalline wurtzite structure. On other hand, Sn-rich exhibited rutile structure, where Zn atom was speculated replace Sn site, thereby acting as an acceptor. In intermediate regions (Sn/[Zn+Sn] ratio from 0.28 0.48), amorphous even after annealing at...

10.1021/am503351e article EN ACS Applied Materials & Interfaces 2014-08-04

Micro light-emitting diodes (micro-LEDs) are pivotal in next-generation display technologies, driven by the need for high pixel density. This study introduces a novel methodology utilizing wide sapphire nanomembranes (W-SNM) as dual-purpose template high-quality epitaxial growth and mechanical lift-off of individual micro-LEDs. Micro-LEDs grow individually on W-SNM, obviating chip singulation process. By employing fracturing thin our method facilitates transfer micro-LEDs without...

10.1021/acsami.4c05958 article EN ACS Applied Materials & Interfaces 2024-08-05

The advancement of the Internet Things and artificial intelligence has increased demand for air quality monitoring to protect human health. Nitrogen dioxide (NO2), a hazardous pollutant, causes inflammatory responses, even at low concentrations, necessitating sensitive gas sensors. Although metal oxide semiconductor sensors are commonly used, their high-operating temperature reliance on additional heaters limit miniaturization increase power consumption. Here, lead-free, transparent,...

10.1021/acs.nanolett.4c06149 article EN Nano Letters 2025-02-04

Transition metal dichalcogenides (TMDCs) have emerged as promising catalysts for the hydrogen evolution reaction (HER) owing to their abundance, low cost, and electronic diversity. However, role of oxidation in...

10.1039/d5ta00991j article EN Journal of Materials Chemistry A 2025-01-01

Assembling transition metal dichalcogenides (TMDCs) at the two-dimensional (2D) limit is a promising approach for tailoring emerging states of matter such as superconductivity or charge density waves (CDWs). Single-layer (SL) VSe$_2$ stands out in this regard because it exhibits strongly enhanced CDW with higher temperature compared to bulk addition an insulating phase anisotropic gap Fermi level, causing suppression anticipated 2D ferromagnetism material. Here, we investigate interplay...

10.1021/acs.nanolett.0c04409 article EN Nano Letters 2021-02-18

Abstract Transition metal dichalcogenides have attracted renewed interest for use as thermoelectric materials owing to their tunable bandgap, moderate Seebeck coefficient, and low thermal conductivity. However, parameters such electrical conductivity, conductivity are interdependent, which is a drawback. Therefore, it necessary find way adjust one of these without affecting the other parameters. In this study, we investigated effect helium ion irradiation on MoSe 2 thin films with objective...

10.1186/s11671-022-03665-9 article EN cc-by Nanoscale Research Letters 2022-02-10

The oxygen ratio-dependent device performance and reliability of zinc tin oxide (ZTO) thin-film transistors (TFTs) were examined. ZTO TFTs fabricated under pure Ar conditions exhibited a high saturation mobility 21.5 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs, low subthreshold gate swing 0.34 V/decade, I <sub xmlns:xlink="http://www.w3.org/1999/xlink">ON/OFF</sub> ratio (10 xmlns:xlink="http://www.w3.org/1999/xlink">9</sup>...

10.1109/ted.2014.2318055 article EN IEEE Transactions on Electron Devices 2014-05-01

We present a post-growth ex-situ annealing method to control the Curie temperature and magnetic anisotropy of Cr2Te3 van der Waals ferromagnetic thin films. The as-grown films exhibit ∼ 170 K with an out-of-plane easy axis. Upon high (300–400 °C) annealing, phase film changes: is significantly increased 300 axis reoriented in-plane direction. Electronic, chemical, structural analyses suggest that c-axis lattice constant expansion, accompanying process, origin ex-situ-annealing-induced...

10.1016/j.apsusc.2023.159057 article EN cc-by Applied Surface Science 2023-12-03

This study examined the effect of sputtering power on performance zinc-tin-oxide field-effect transistors and stability under photobias stress. Large improvements in saturation mobility subthreshold swing were found devices fabricated at higher powers; 13.80 cm2/V·s, 0.33 V/decade a 400 W compared with 2.70 1.19 50 W. The threshold voltage shift negative bias illumination stress (NBIS) for device shows superior properties (−2.41 V) that (−5.56 electrical NBIS attributed to formation denser...

10.1116/1.4832329 article EN Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 2013-11-18

Combining chemical reaction and low-temperature annealing allows to form perfectly stoichiometric 1T-VS 2 , where multiple charge density wave orders are observed due strong electron–phonon coupling.

10.1039/d2tc04186c article EN Journal of Materials Chemistry C 2022-01-01

https://2DMat.ChemDX.org is a comprehensive data platform tailored for 2D materials research, emphasizing the handling and analysis of experimental through specialized management, visualization, machine learning tools.

10.1039/d3dd00243h article EN cc-by Digital Discovery 2024-01-01
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