We study the effects of magnetic and electric fields on g factors spins confined in a two-electron InAs nanowire double quantum dot. Spin sensitive measurements are performed by monitoring leakage current Pauli blockade regime. Rotations single driven using electric-dipole spin resonance. The extracted from resonance condition as function field direction, allowing determination full tensor. Electric tuning can be used to maximize g-factor difference some cases altogether quench response,...

We demonstrate a total charge parity measurement by detecting the radio frequency signal that is reflected lumped element resonator coupled to single InAs nanowire double quantum dot. The high response of circuit used probe effects Pauli exclusion principle at interdot transitions. Even transitions show striking magnetic field dependence due singlet-triplet transition, while odd are relatively insensitive field. measured agrees well with cavity input-output theory, allowing accurate...

The authors demonstrate an electric-field control of tunneling magnetoresistance (TMR) effect in a semiconductor quantum-dot spin-valve device. By using ferromagnetic Ni nanogap electrodes, they observe the Coulomb blockade oscillations at small bias voltage. In vicinity peak, TMR is significantly modulated and even its sign switched by changing gate voltage, where value changes resonant condition.

The authors have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. MTJ shows clear hysteretic magnetoresistance (TMR) effect, is evidence for spin transport through semiconductor QD. TMR ratio and the curve shapes are varied by changing gate voltage.

We experimentally study the tunneling magnetoresistance (TMR) effect as a function of bias voltage $({V}_{\mathrm{SD}})$ in lateral $\mathrm{Ni}∕\mathrm{In}\mathrm{As}∕\mathrm{Ni}$ quantum-dot (QD) spin valves showing Coulomb blockade characteristics. With varying ${V}_{\mathrm{SD}}$, TMR value oscillates and oscillation period corresponds to conductance changes observed current-voltage $(I\text{\ensuremath{-}}{V}_{\mathrm{SD}})$ also find an inverse near ${V}_{\mathrm{SD}}$ values where...

Single-crystalline rock-salt PbS nanowires (NWs) were synthesized using three different routes; the solvothermal, chemical vapor transport, and gas-phase substitution reaction of pregrown CdS NWs. They uniformly grown with [100] or [110], [112] direction in a controlled manner. In solvothermal growth, oriented attachment octylamine (OA) ligands enables NWs to be produced morphology growth direction. As concentration OA increases, evolves from higher surface-energy [110] directions under more...

Coupling carbon nanotube devices to microwave circuits offers a significant increase in bandwidth (BW) and signal-to-noise ratio. These facilitate fast non-invasive readouts important for quantum information processing, shot noise correlation measurements. However, creation of device that unites low-disorder with low-loss resonator has so far remained challenge, due fabrication incompatibility one the other. Employing mechanical transfer method, we successfully couple gigahertz...

We demonstrate high-frequency mechanical resonators in ballistic graphene p–n junctions.

We demonstrate charge sensing of an InAs nanowire double quantum dot (DQD) coupled to a radio frequency (rf) circuit. measure the rf signal reflected by resonator using homodyne detection. Clear single and DQD behavior are observed in response. rf-reflectometry allows measurements stability diagram few-electron regime even when dc current through device is too small be measured. For signal-to-noise ratio one, we estimate minimum detection time 350 microseconds at interdot transitions 9 for...

We have investigated electron filling in single InAs quantum dots (QDs) using a lateral transport structure, i.e., nanolithographically defined metallic leads with nanogaps. Elliptic QDs diameter of ∼60∕80nm exhibited clear shell up to 12 electrons before the gate leakage became significant. Shell-dependent charging energies and level quantization for s, p, d states were determined from addition energy spectra. Furthermore, it was found that tunneling conductances strongly depend on shell,...

Using a laterally fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in electron transport through semiconductor QD with an odd number of electrons (N). In parallel magnetic configuration ferromagnetic electrodes, resonance at N=3 splits clearly without external fields. With applying fields (B), splitting is gradually reduced, and then almost restored B=1.2T. This means that, regime, inverse effective field B∼1.2T can be applied to electrodes.

We present a mechanical memory device based on dynamic motion of nanoelectromechanical (NEM) resonator. The NEM resonator exhibits clear nonlinear resonance characteristics which can be controlled by the dc bias voltage. For operations, is driven to region, and binary values are assigned two allowed states bifurcation branch. transition between achieved modulating with Our works at room temperature modest vacuum conditions maximum operation frequency about 5 kHz.

We experimentally study the transport features of electrons in a spin-diode structure consisting single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic and ferromagnetic (FM) lead, which QD has an artificial atomic nature. A Coulomb stability diamond shows asymmetric with respect polarity bias voltage. For regime two-electron tunneling, we find anomalous suppression current for both forward reverse bias. discuss possible mechanisms terms spin blockade via QD-FM interface at...

We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When they were switched from low to high states, power spectral density voltage fluctuation was increased by approximately five orders magnitude. At 100 K, relative fluctuation, SR/R2, in state displayed a law dependence on R with exponent w = 1.6. This behavior can be explained percolation theory; however, at higher temperatures or near switching voltage, SR/R2 becomes enhanced further. large...

We explore the potential of bilayer graphene as a cryogenic microwave photodetector by studying absorption in fully suspended clean pn junctions frequency range $1-5$ GHz at temperature 8 K. observe distinct photocurrent signal if device is gated into regime, while there almost no for unipolar doping either nn or pp regimes. Most surprisingly, strongly peaks when one side junction to Dirac point (charge-neutrality CNP), other remains highly doped state. This different previous results where...

Transition metal oxide-based memristors have widely been proposed for applications toward artificial synapses. In general, two or more electrically switchable stable resistance states that device researchers see as an analogue to the ion channels found in biological The mechanism behind resistive switching oxides has divided into electrochemical metallization models and valence change models. stability of memristor vary depending on: oxide material, electrode deposition conditions, film...

The bottom-up synthesis process often allows the growth of metastable phase nanowires instead thermodynamically stable phase. Herein, we synthesized Cd3As2 with a controlled three-dimensional Dirac semimetal using chemical vapor transport method. Three different phases such as body centered tetragonal (bct), and two primitive (P42/nbc P42/nmc) were identified. conversion between three (bct → P42/nbc was achieved by increasing temperature. direction is [110] for bct [100] P42/nmc,...

The electron transport through single self-assembled InAs quantum dots (QDs) grown on GaAs surfaces has been investigated by using metallic leads with narrow gaps. Clear Coulomb staircases and gaps have observed at 4.2K. blockade oscillation which reflects charging in the QDs was also when a backgate voltage swept. It is found that uncapped as-grown diameter ⩾50nm contain electrons without applying gate bias.

We observed the spin-half Kondo effect for a single uncapped large InAs self-assembled quantum dot at zero and high magnetic field. At field we standard effect. The high-field appears only when first second spin-resolved Landau states become degenerate because of Zeeman effect, which confirmed from dependence

Semiconducting nanowires (NWs) are a versatile, highly tunable material platform at the heart of many new developments in nanoscale and quantum physics. Here, we demonstrate charge pumping, i.e., controlled transport individual electrons through an InAs NW dot (QD) device frequencies up to $1.3\,$GHz. The QD is induced electrostatically by series local bottom gates state art geometry. A periodic modulation single gate enough obtain dc current proportional frequency modulation. bias,...

Single-crystalline PbTe nanowires were synthesized using the chemical vapor transport method. They consisted of rock-salt structure nanocrystals uniformly grown in [100] direction. We fabricated field-effect transistors a single nanowire, providing evidence for its intrinsic n-type semiconductor characteristics. The values carrier mobility and concentration estimated to be 0.83 cm2 V−1 s−1 8.8 × 1017 cm−3, respectively. Seebeck coefficients (−72 µV K−1) individual measured show their...

We report on the fabrication and measurements of a superconducting junction single-crystalline Au nanowire, connected to Al electrodes. The current−voltage characteristic curve shows clear supercurrent branch below transition temperature quantized voltage plateaus application microwave radiation, as expected from Josephson relations. Highly transparent (0.95) contacts very close an ideal limit 1 are formed at interface between normal metal (Au) superconductor (Al). high transparency is...