A5068925809- Semiconductor materials and devices
- Advanced ceramic materials synthesis
- Ion-surface interactions and analysis
- Silicon Carbide Semiconductor Technologies
- Diamond and Carbon-based Materials Research
- Semiconductor materials and interfaces
- Metal and Thin Film Mechanics
- Advanced materials and composites
- Nuclear materials and radiation effects
- High-pressure geophysics and materials
- Silicon and Solar Cell Technologies
- Intermetallics and Advanced Alloy Properties
- Aluminum Alloys Composites Properties
- ZnO doping and properties
- Nuclear Materials and Properties
- Integrated Circuits and Semiconductor Failure Analysis
- Nonlinear Optical Materials Studies
- Underwater Acoustics Research
- Energetic Materials and Combustion
- Radioactive element chemistry and processing
- Fatigue and fracture mechanics
- Gold and Silver Nanoparticles Synthesis and Applications
- Mechanical Failure Analysis and Simulation
- Hydrogen embrittlement and corrosion behaviors in metals
- Multiferroics and related materials
University of Pretoria
2015-2024
Busitema University
2018
Plasmonic based hybrid noble metal nanoclusters (NCs) have gained much interest in various technological applications such as optoelectronics, photonic devices and nonlinear media including biomedical due to their tunable optical properties. Here, Ag NCs are grown embedded glass using simple ion‐exchange process effect of parameter post thermal treatment is studied on tunability behavior (plasmonic, nonlinearity, photoluminescence properties) view potential nanophotonics media. The optical,...
The effect of swift heavy ion (Xe 167 MeV) irradiation on polycrystalline SiC individually implanted with 360 keV Kr and Xe ions at room temperature to fluences 2×10 16 cm -2 1×10 respectively, was investigated using transmission electron microscopy (TEM), Raman spectroscopy Rutherford backscattering spectrometry (RBS).Implanted specimens were each irradiated MeV +26 a fluence 8.3×10 14 temperature.It observed that implantation amorphized the from surface up depth 186 219 nm...
TEM, RS and RBS were used to characterize polycrystalline SiC specimens individually implanted with 360 keV I<sup>+</sup> or Kr<sup>+</sup> ions at room temperature thereafter either irradiated 167 MeV Xe a fluence of 5 × 10<sup>13</sup> cm<sup>−2</sup> 500 °C annealed under vacuum.
The effects of implantation Samarium ions (Sm+), a rare earth ion (RE) on the properties ZnO films grown Si (001) substrate by RF sputtering system are presented. structural virgin and Sm–implanted thin were investigated Atomic force microscopy, Rutherford backscattering spectroscopy Raman spectroscopy. Local lattice softening caused incorporation highly mismatched Sm+ (ionic radii 0.096 nm 0.113 for Sm3+ Sm2+ respectively) into Zn antisites was detected as red shift in E2 (high) mode likely...
The effects of helium (He) bubbles and annealing on the structural evolution migration silver (Ag) implanted into polycrystalline silicon carbide were investigated. Ag ions 360 keV SiC to a fluence 2 × 10 16 cm−2 at 350 °C (Ag-SiC). Some samples then with He 17 1 1017 also (Ag + He-SiC). Ag-SiC He-SiC annealed 1100 for 5 h. as-implanted characterized by Raman spectroscopy, scanning electron microscopy (SEM) atomic force (AFM), Rutherford backscattering spectrometry (RBS) transmission (TEM)....
A study of a tungsten (W) thin film deposited on single crystalline 6H–SiC substrate and annealed in Ar at temperatures 700 °C, 800 900 °C 1000 for 1 hour was conducted.