A distributed Bragg reflector (DBR) tapered diode laser with a record optical output power of 12 W and conversion efficiency about 44% is presented. The device has sixth-order surface grating shows single longitudinal mode emission at 979 nm as well nearly diffraction limited beam. At 11.4 the lateral beam propagation factor M21/e2=1.1 72% in central lobe.

We present experimental results about edge-emitting distributed-Bragg-reflector-tapered diode lasers emitting at 980 nm. The investigated show an output power of up to 12 W with a conversion efficiency 45%. also exhibit small vertical divergence <15deg full-width half maximum (FWHM), nearly diffraction-limited beam quality, and narrow spectral linewidth FWHM smaller than pm. These properties allow efficient single-pass second harmonic generation levels more 1 488

In this work we report the first quasi-continuous in-situ photoluminescence study of growing InGaN LED structures inside an industrial-grade metal-organic vapor phase epitaxy (MOVPE) reactor at growth temperature. The spectra contain information about temperature, thickness and composition epitaxial layers. Furthermore, – even early stage active region can be used to predict emission wavelength structure room accuracy predicted in range ± 1.3 nm (2σ) is demonstrated. This technique thus...

We manufactured and investigated distributed Bragg reflector ridge-waveguide diode lasers having sixth-order surface gratings an emission wavelength around 974 nm. The single-mode output power of the with a total length 4 mm exceeded 1 W. A very small spectral linewidth 1.4 MHz (3 dB) consisting Lorentzian part 146 kHz Gaussian 1308 was measured using self-delayed heterodyne measurement technique.

We studied the deoxidation of several (001) III–V semiconductors in metal-organic vapour phase epitaxy using in-situ reflectance anisotropy spectroscopy and spectroscopic ellipsometry. The oxide desorption started as soon kBT reaches 1/15th bond strength crystal if there is hydrogen or group V precursor present. thickness decreases first afterwards surface slowly reconstructs. At a constant temperature decreased according to second order reaction. found two processes on InAs GaAs, but only...

Abstract We report on an optical multichannel RAS (Reflectance Anisotropy Spectroscopy) setup capable of measuring at multiple photon energies simultaneously in the spectral range between 1.4 and 5.0 eV a temporal resolution up to 30 ms. The is specifically designed for time‐resolved studies surface processes (e.g. epitaxial growth). Its accuracy was evaluated static surfaces by comparison with spectra acquired using conventional scanning setup. performance demonstrated studying 2D island...

Small-sized modules that have an output power P&gt;100 mW with a spectral width &lt;0.25 pm at 15°C are presented. The modules, aimed HeNe laser applications, stabilised 632.8 nm reflective volume Bragg gratings the rear side of tapered gain medium. medium consists AlGaInP layers grown on GaAs metal-organic vapour-phase epitaxy, which allows for emission between 629 and 636 in external cavity configuration. Free running lasers from same material achieve room temperature continuous wave...

Red-emitting diode lasers currently do not offer a small spectral linewidth, which is required in variety of applications like spectroscopy, interferometry and holography. We will present details our work on with internal surface DBR gratings. These exhibit effective operation the gratings at four different lasing wavelengths from 632.2 nm to 638.1 nm. 30 μm wide obtain spectrally stabilized optical output power 250 mW pulsed operation. estimate reflectivity rear grating exceed 60%.

Flying-spot display applications require high luminance (&gt; 100 TCd/m²) red-emitting lasers. High is defined as a optical output power and nearly diffraction limited beam quality at wavelength with good visibility of the human eye. Diode lasers, all their beneficial properties such direct modulation capability, small size electro-optical efficiency, are so far unable to achieve luminance, due catastrophic mirror damage (COMD) caused by facet loads. (See manuscript for full abstract.)

Polarized infrared reflection measurements in an ellipsometric set-up and reflectance anisotropy spectroscopy (RAS) were used for the first time combined in-situ characterization of electrochemical growth (potentiostatic pulse method) thin polypyrrole (PPy) films on Si(110). Both methods can monitor material thickness related changes during deposition are shown as sensitive tools studying development PPy under varying potential. In detail polarized delivered information chemical structure...

Highly efficient operation of 637-nm broad-area (BA) laser diodes and bars with a small vertical far field 30 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">deg</sup> (full-width at half-maximum) is reported. The structure consists an InGaP quantum well embedded in AlGaInP waveguide layers n-AlInP p-AlGaAs cladding layers. Single BA emitters stripe width mum emitted maximum continuous-wave (CW) power 540 mW 15degC. Six-millimeter-wide 12 30-...

Tapered diode lasers in the red spectral range with nearly diffraction-limited output are prospective light sources for display applications and analytic methods such as fluorescence microscopy. The authors have studied influence of number quantum wells lateral design 660 nm high-power tapered on power beam quality. From these investigations developed an optimised achieved a record 1.5 W quality close to diffraction limit (M2(1/e2)=1.5). also demonstrate operation over 4500 h at levels...

A 980 nm DBR tapered laser is presented which achieves 12 W power in a single longitudinal mode and nearly diffraction limited beam with conversion efficiency of 44%. The device has 6 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sup> -order surface grating.

Development and manufacturing of LED structures is still driven by production cost reduction performance improvements. Therefore, in-situ monitoring during the epitaxial process plays a key role in view further yield improvement optimization. With continuing trend towards larger wafers, stronger bow increased aspherical curvature are additional challenges growers have to face, leading non-uniform LED-emission. Compared traditional metrology like measurement near UV pyrometry,...

The spin‐coating and subsequent low‐temperature annealing processes of organic/inorganic halide perovskites are investigated using in situ high‐speed spectral reflectance measurements. Methyl ammonium lead triiodide (CH 3 NH PbI , MAPI), methyl tribromide PbBr MAPBr), formamidinium (HC(NH 2 ) FAPI), triple cation‐based (TripleCat) perovskite Cs 0.05 (FA 0.83 MA 0.17 0.95 Pb(I Br used as precursor solutions. After ≈1 s spin coating, interference fringes develop that to determine the thickness...

In article number 2000479, Jörg Rappich and co-workers address early stages of film formation crystallization organic lead triiodide perovskites by employing in-situ high-speed spectral reflectance measurements. The time scale ranges from 0.2 milliseconds to seconds. Data were taken during spincoating subsequent low-temperature annealing. measurements enable the investigation changes in solution spin-coating process. evaporation solvent results spontaneous perovskite layer. During annealing...

We will present novel 633 nm diode lasers operating continuous wave with lateral, using a taper laser geometry, and longitudinal, external volume Bragg gratings, mode filtering at room temperature.

Abstract Gallium Nitride (GaN) and Indium (InGaN) have become important semiconductor materials for the LED lighting industry. Recently, a photoluminescence (PL) technique direct in-situ characterization of GaN InGaN layers during epitaxial growth in planetary metalorganic vapor phase epitaxy (MOVPE) reactor was reported. The PL signals reveal – at earliest possible stage information about current layer thickness, temperature, composition, surface roughness, self-absorption. Thus, data is...

Red-emitting lasers with longitudinal and lateral single mode emission are currently required for non-destructive spectroscopy methods based on quantum mechanical effects (e.g. MID-IR quantum-OCT). So far, the size of used solid state prevents effective miniaturization, which is successful out-of-the lab usage. To address this challenge FBH developed specialized ridge waveguide (RWL) near 660 nm an integrated fourth order distributed Bragg reflector (DBR) surface grating, requiring only a...

In this paper we present a study of the single pass normalized second harmonic generation (SHG) conversion efficiency as function beam propagation factor M² and diameter in lateral vertical direction. It can be shown that an increase results dramatic changes for optimal focusing conditions, comparison to SHG with Gaussian beam. Based on measurements developed model simulate conditions partial coherent beams.

We present results of recently developed DBR-tapered lasers, which emit nearly diffraction limited beams with optical powers >; 10 W and spectral widths <; pm. Lifetime tests the lasers show reliable operation up to 8 W. The high brilliance these is demonstrated by efficient single-pass second-harmonic generation over 1 green or cyan power on a micro module. In preliminary lifetime test green-emitting module was operated at 200 mW for more than 100 h.