A5013571315- Physics of Superconductivity and Magnetism
- Graphene research and applications
- Quantum and electron transport phenomena
- Surface and Thin Film Phenomena
- Superconducting and THz Device Technology
- Cold Atom Physics and Bose-Einstein Condensates
- Diamond and Carbon-based Materials Research
- Fullerene Chemistry and Applications
- 2D Materials and Applications
- Photonic and Optical Devices
- Molecular Junctions and Nanostructures
- Chalcogenide Semiconductor Thin Films
- Vacuum and Plasma Arcs
- Gas Dynamics and Kinetic Theory
- Electronic and Structural Properties of Oxides
- Topological Materials and Phenomena
TU Wien
2023-2025
University of Cologne
2022-2025
We synthesized and spectroscopically investigated monolayer (ML) C60 on the topological insulator (TI) Bi4Te3. This C60/Bi4Te3 heterostructure is characterized by an excellent translational order in a novel (4 × 4) superstructure (9 9) cell of Angle-resolved photoemission spectroscopy (ARPES) reveals that ML accepts electrons from TI at room temperature, but no charge transfer occurs low temperatures. temperature-dependent doping further Raman spectroscopy, photoluminescence (PL),...
The occupied electron energy bands of monolayer ${\mathrm{MoS}}_{2}$ are composed from out-of-plane $d$ orbitals at the Brillouin zone (BZ) center and in-plane BZ corner. If a dopant would interact in an orbital selective manner with bands, it could provide tuning knob to modulate according wave vector. Here we directly show by angle-resolved photoemission spectroscopy (ARPES) that Fe doping epitaxial is selective. That is, causes larger upshift valence band compared optical properties...
We synthesize and spectroscopically investigate monolayer C$_{60}$ on the topological insulator (TI) Bi$_4$Te$_3$. This C$_{60}$/Bi$_4$Te$_3$ heterostructure is characterized by excellent translational order in a novel (4 x 4) superstructure (9 9) unit of measure full two-dimensional energy band structure using angle-resolved photoemission spectroscopy (ARPES). find that accepts electrons from TI at room temperature but no charge transfer occurs low temperatures. unravel this peculiar...
An instrument for the simultaneous characterization of thin films by Raman spectroscopy and electronic transport down to 3.7 K has been designed built. This setup allows in-situ preparation air-sensitive samples, their spectroscopic with different laser lines five-probe measurements using sample plates prefabricated contacts. The lowest temperatures that can be achieved on are directly proven measuring superconducting transition a Niobium film. temperature-dependent shift narrowing Silicon...
An instrument for the simultaneous characterization of thin films by Raman spectroscopy and electronic transport down to 3.7 K has been designed built. This setup allows in situ preparation air-sensitive samples, their spectroscopic with different laser lines five-probe measurements using sample plates prefabricated contacts. The lowest temperatures that can be achieved on are directly proven measuring superconducting transition a niobium film. temperature-dependent shift narrowing silicon...
We propose a bolometer intended for room-temperature operation and based on 100-nm-wide ruthenium (Ru) strip fabricated thin layer of cross-linked polymethyl methacrylate (XPMMA). This provides thermal isolation between the silicon substrate Ru nanostrip increasing nonlinearity <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}-{V}$ </tex-math></inline-formula> curve due to more intensive self-heating by...