A5052303654- Advancements in PLL and VCO Technologies
- Radio Frequency Integrated Circuit Design
- Hair Growth and Disorders
- Analog and Mixed-Signal Circuit Design
- Microwave Engineering and Waveguides
- Dermatology and Skin Diseases
- Dermatologic Treatments and Research
- Semiconductor materials and devices
- Advancements in Transdermal Drug Delivery
- Autoimmune Bullous Skin Diseases
- melanin and skin pigmentation
- Skin and Cellular Biology Research
- Colorectal Cancer Treatments and Studies
- Advanced Power Amplifier Design
- Intracranial Aneurysms: Treatment and Complications
- Technology and Data Analysis
- Advanced Wireless Communication Techniques
- Dispute Resolution and Class Actions
- Acne and Rosacea Treatments and Effects
- Tuberculosis Research and Epidemiology
- Electromagnetic Compatibility and Noise Suppression
- Food Allergy and Anaphylaxis Research
- Outsourcing and Supply Chain Management
- Anorectal Disease Treatments and Outcomes
- Obsessive-Compulsive Spectrum Disorders
Yonsei University
2017-2022
Purdue University West Lafayette
2004-2007
Samsung (South Korea)
2003-2004
A fractional-N frequency synthesizer (FNFS) in a 0.5-/spl mu/m SiGe BiCMOS technology is implemented. In order to operate wide-band range, switched-capacitors bank LC tank voltage-controlled oscillator (VCO) and an adaptive calibration (AFC) technique are used. The measured VCO tuning range as wide 600 MHz (40%) from 1.15 1.75 GHz with sensitivity 5.2 17.5 MHz/V. 3-bit fourth-order /spl Sigma/-/spl Delta/ modulator used reduce out-of-band phase noise meet resolution of less than 3 Hz well...
This paper presents an integrated 3GHz ultra low power CMOS noise amplifier (LNA) based on a cascode topology where both MOS transistors are biased in subthreshold region. At 160muW DC consumption and supply of 0.6V, this LNA has measured gain 4.5dB figure 6.3dB. 400muW consumption, the delivers 9.1dB 4.7dB. The IIP3 under 400uAV dissipation is -11dBm while input output matching better than -13dB. By using merit that contains effect figure, gain, linearity, operating frequency, we have shown...
A subthreshold low power, phase-noise voltage controlled oscillator (VCO) is demonstrated in a commercial 0.18 mum CMOS process. In regime, MOS drain current dominated by diffusion mechanism resulting high ratio of transconductance to and suppressed phase noise. Therefore, power noise characteristics are achieved without using nonconventional passive components. The VCO measures -106 dBc/Hz at 400 kHz offset from 2.63 GHz oscillation frequency with 0.43 mW dissipation drawn 0.45 V supply....
A fractional-N frequency synthesizer (FNFS) in a 0.5-/spl mu/m SiGe BiCMOS technology is implemented. In order to operate wideband range, switched capacitor bank LC tank VCO and an adaptive calibration (AFC) technique are used. 3-bit 4th /spl Sigma/-/spl Delta/ modulator used reduce out-of-band phase noise meet resolution of less than 3Hz as well agile switching time. The experimental results show -80dBc/Hz in-band within the loop bandwidth 25 kHz -129dBc/Hz at 400kHz-offset frequency....
This paper presents an integrated 2.4GHz ultra low power CMOS frequency down-converting active mixer based on a single balanced Gilbert-cell resistor-loaded topology where all MOS transistors of core are optimally biased in subthreshold region. At only 500μW DC consumption under 1.0V supply and small LO -9dBm, this has measured conversion gain 15.7dB DSB noise figure 18.3dB. same dissipation power, -9dBm IIP3 -28dBm input PldB obtained while the return losses at RF IF ports better than -20dB...
An extremely low power phase noise CMOS LC voltage controlled oscillator (VCO) has been fully integrated in a commercial 0.18 mum process. To achieve and noise, complementary NMOS PMOS cross-coupled differential structure is used. The tank composed of octagonal-shaped inductors with 2 Al metal standard varactors. measured -111 dBc/Hz at 1 MHz offset from 1.87 GHz carrier when the VCO core consumes only 0.5 mW 0.9 V supply. consumption lowest reported literature for VCOs. This figure merit...
While the etiology of sarcoidosis remains uncertain, mycobacteria have been suggested as a causative infectious agent. To investigate causal relationship between and sarcoidosis, we performed reverse blot hybridization assay (REBA) to identify from skin samples nine patients with sarcoidosis. Six were shown be positive for by REBA, including Mycobacterium tuberculosis non-tuberculous mycobacteria. This is first study using our results could strengthen etiologic association
A fully integrated 10 GHz LC voltage controlled oscillator is presented. The VCO implemented in 6 metal 0.18/spl mu/m CMOS process. achieves a wide tuning range of 20.1% (10.20 to 12.48 GHz), and provides an output power -3 dBm, while drawing 22.7 mA from 2.2 V supply. measured phase noise -125.33 dBc/Hz at 1 MHz offset the carrier 10.3 GHz. figure merit record low -188 dBc/Hz.
A 2 GHz wide band low phase noise voltage-controlled oscillator (VCO) is presented. To achieve excellent performance while maintaining frequency tuning characteristic, a 6-bit digitally controlled switched-capacitor bank and tail current control scheme are used. The effect of the gate length MOS switches on Q-factor LC tank also analysed qualitatively. measured -115 dBc/Hz at an offset 100 kHz from operating frequency. total range as 550 MHz (30%) RF output power about -10 dBm single ended...
Abstract Excess glucocorticoids (GCs) with either endogenous or exogenous origins deteriorate skin barrier function. GCs bind to mineralocorticoid and GC receptors (MRs GRs) in normal human epidermal keratinocytes (NHEKs). Inappropriate MR activation by mediates various GC-induced cutaneous adverse events. We examined whether antagonists can ameliorate GC-mediated dysfunction NHEKs, reconstructed epidermis (RHE), subjects under psychological stress (PS). In a preliminary clinical...
None declared. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by authors. Any queries (other than missing content) should be directed to corresponding author article.
A fully integrated 10 GHz LC voltage controlled oscillator is presented. The VCO implemented in 6 metal 0.18 mum CMOS process. achieves a wide tuning range of 20.1% (10.20 to 12.48 GHz), and provides an output power -3 dBm, while drawing 22.7 mA from 2.2 V supply. measured phase noise -125.33 dBc/Hz at 1 MHz offset the carrier 10.3 GHz. figure merit record low -188
The morphology of hair regrowth in alopecia areata (AA) patches could be classified into four types, namely diffuse, irregular, marginal, and targetoid patterns, according to the DIMT classification. However, factors affecting patterns have not been investigated.We investigated whether DIMT-classified AA are associated with treatment modality patch size.We conducted a retrospective, cross-sectional study 152 regrowth.The associations between diffuse pattern size >2 cm (p=0.006; odds ratio...
As a building block for GSM/PCN dual band RF transceiver IC, low noise variable gain down conversion mixer is designed and fabricated using 15 GHz-f/sub T/, 0.5 /spl mu/m 3-metal 2-poly BiCMOS process. Careful consideration paid to the performance of mixer. Moreover, constant-impedance input/output stages, input IF output return losses are maintained under -16 dB both high modes. Measured DSB figure 10.9 9.1 dB, respectively, GSM band, 9.6 8.1 PCN band. Gain difference between modes 11 11.8...
This paper presents a fractional-N synthesizer with 3-bit 4th-order interpolative /spl Sigma/-/spl Delta/ modulator for GSM/GPRS direct conversion transceiver. With an integrated VCO and loop filter, the achieves phase noise performances less than -78dBc/Hz at close-in offset -116dBc/Hz 400kHz offset. The chip was fabricated evaluated in 0.35 mu/m SiGe BiCMOS process.
A multi-mode GSM direct conversion receiver with integrated synthesizer is implemented by a 0.35 /spl mu/m BiCMOS technology. The proposed IP2 (second order intercept point) calibration method analyzed and verified measurements. maximum IIP2 input of 66 dBm achieved an 8 bit resistive code. draws 57/63mA from 2.7 V supply.