Abstract Wide-bandgap chalcopyrite Cu(In,Ga)S 2 (CIGS) solar cell is a promising material because its bandgap suitable for top-cell of tandem cell. Highly efficient CIGS cells are typically fabricated through the sulfurization Cu–Ga–In metal precursors. In this study, stacked Cu–Ga/In metal-precursors were prepared with varying [Ga]/([Ga] + [Cu]) (GGC) ratio ranging from 0 to 0.55. These precursors analyzed using X-ray diffraction based on Cu–Ga and phase diagrams. The results confirmed that...

In this study, a peeling‐off technique is developed for fabricating flexible, lightweight, and bifacial perovskite/Cu(In,Ga)Se 2 (CIGSe) tandem solar cells (TSCs). The process involves forming perovskite/CIGSe TSC on glass substrate then peeling it off. effectiveness of the proposed investigated using CIGSe single‐junction cell. A MoSe atomic layer with c ‐axis orientation observed at Mo/CIGSe interface, which promotes process. lightweight cell power conversion efficiency (PCE) 12.3%...

Abstract In recent years, the increase in conversion efficiency of CIGSe solar cells has plat-eaued, necessitating improvements back contact properties for further gains. this study, we conduct a structural analysis to investigate feasi-bility applying Li-doped NiO as hole transport layer cells. XRD and AFM analyses demonstrate that grown on NiO:Li exhibits crystallinity comparable Mo. However, TEM EDS mapping images Mo/NiO:Li/CIGSe structure reveal significant interlayer diffusion, leading...

Abstract Cu‐deficient layer (CDL) on Cu(In,Ga)Se 2 (CIGS) promotes Cd diffusion from CdS buffer and forms a valence band offset (Δ E V ) between CDL CIGS. We quantitively demonstrate the effects of formation performance CIGS solar cells through experiments theoretical simulation. To investigate Δ by CDL, analysis was carried out for cell with surface which simulated at CdS/CIGS interface. It revealed that when electron concentration in n‐type is higher than absolute carrier absorber ( N D...

A meeting environment for casual communication in a networked community, FreeWalk provides 3D common area where everyone can meet and talk freely. represents participants as polygon pyramids, on which their live video is mapped. Voice volume remains proportional to the distance between sender receiver. For evaluation, we compared communications conventional desktop videoconferencing system face-to-face meeting.

Abstract Cd‐free Cu(In,Ga)(S,Se) 2 (CIGSSe) solar cells are fabricated by an all‐dry process (a and CIGSSe cell) with aged thin film absorbers. The films kept in a desiccator cabinet under partial pressure of oxygen ≈200 Pa for aging time up to 10 months. It is reported the first that increased results significant enhancement photovoltaic performance cells, regardless alkali treatment. Based on carrier recombination analysis, rates at interface depletion region reduced owing avoidance...

Flexible Cu(In,Ga)Se2 (CIGSe) solar cells on stainless steel (SUS) substrates are developed. The contribution concentrates the investigation of correlation between Urbach energy (EU) and open-circuit voltage deficit (VOC,def). several CIGSe soda-lime glass SUS with various VOC,def values fabricated through variations [Ga]/([Ga] + [In]) ratio (GGI), substrate temperature (TSUB), Fe concentration their absorbers. EU is determined based external quantum efficiency in long-wavelength edge. It...

We inserted Cu(In,Ga)3Se5 into the CdS/Cu(In,Ga)Se2 interface of Cu(In,Ga)Se2 solar cells with a flat band profile and energy bandgaps (Eg) 1.2 1.4 eV in order to investigate repelling holes by effect valence offset (ΔEv). found that open circuit voltage (VOC) was clearly improved from 0.66 0.75 V Eg eV, although VOC only increased 0.63 0.64 eV. For high efficiency, we fabricated single-graded an average Eventually, conversion efficiency 14.4% obtained when thickness 30 nm inserted, 10.5%...

Abstract Se irradiation with time, t , was introduced after the second stage of a three-stage process to control Cu 2 layer during Cu(In,Ga)Se (CIGS) deposition. Open circuit voltage and fill factor CIGS solar cells could be improved by introducing irradiation. We concluded that led formation Cu-depletion (CDL), which conversion efficiency owing suppression interfacial recombination valence band offset formed between CDL. Finally, highest 19.8% achieved 5 min. This very simple new technique...

The structures of K or Cs alkaline-treated Cu(In,Ga)(S,Se)2 (CIGSSe) solar cells are developed, and their carrier recombination rates scrutinized. It is determined that short-circuit current density (JSC) enhanced (decreased optical loss), when ZnS(O,OH), (Cd,Zn)S, Zn0.8Mg0.2O buffers with a large band gap energy (Eg) applied as replacement CdS buffer. JSC further increased, reducing the loss more, Zn0.9Mg0.1O:B used transparent conductive oxide (TCO) larger Eg lower free absorption than...

The application of two-dimensional MoSe2 atomic layers to the lift-off process is proposed for preparation light-weight and flexible bifacial Cu(In, Ga)Se2 (CIGS) solar cells. results show that CIGS cells are successfully peeled from a Mo rear contact when c-axis MoSe2, formed between layers, vertically oriented surface. In this study, 11.5% efficient fabricated, indicating high-performance ratio 95.0% compared with 12.1% substrate cells, thereby suggesting usefulness layered-grown...

Cd-free Cu(In,Ga)(S,Se)2 (CIGSSe) solar cells with a structure of glass/Mo/CIGSSe/Zn1- xMg xO (buffer)/Zn1- xO:Al (TCO), fabricated by an all dry process, are characterized using ultraviolet light excited time-resolved photoluminescence (UV-TRPL). The impact bandgap energy ( Eg) values buffer and transparent conductive oxide (TCO) layers, denoted Eg TCO, is examined. TCO layers kept almost similar varied from 3.30 to 3.94 eV. In this work, UV-TRPL measurement performed examine the carrier...