A5073775990- Ga2O3 and related materials
- GaN-based semiconductor devices and materials
- ZnO doping and properties
- Photocathodes and Microchannel Plates
- Semiconductor Quantum Structures and Devices
- Copper-based nanomaterials and applications
- Gas Sensing Nanomaterials and Sensors
- Molecular Junctions and Nanostructures
- Electronic and Structural Properties of Oxides
- Plasma Diagnostics and Applications
- Luminescence Properties of Advanced Materials
- Metal and Thin Film Mechanics
- Biosensors and Analytical Detection
- Electrocatalysts for Energy Conversion
- Graph Theory and Algorithms
- Perovskite Materials and Applications
- Pigment Synthesis and Properties
- Advanced Nanomaterials in Catalysis
- Nanowire Synthesis and Applications
- Iron Metabolism and Disorders
- Surface Roughness and Optical Measurements
University of Calcutta
2016-2021
Indian Institute of Engineering Science and Technology, Shibpur
2019-2020
Indian Institute of Technology Kharagpur
2009
Optical emission spectra of nanocrystalline zinc gallate (ZnGa2O4) and trivalent chromium ion doped (ZnGa2O4:Cr3+) are reported for different concentrations the dopant ion. The measurements have been carried out over temperature range between 77 296 K. spectrum ZnGa2O4 shows two broad peaks. intensity variation in these peaks, with temperature, is indicative effect symmetry breaking electronic band structure samples. In addition, we find that relative intensities sharp spectral lines Cr3+...
Ultraviolet (UV) MSM photodetectors (PD) based on AlGaN alloys find many applications, including flame sensing. In this work we investigate the dependence of grown by MBE kinetics growth. were fabricated in interdigitated configuration with Ni/Au contacts having 400 μm finger length and 10 spacing. Bulk Al0.4Ga0.6N films to sapphire substrates using an AlN buffer layer. A series PDs developed under different group III/V flux ratios ranging from stoichiometric conditions much higher than...
We have developed a purely protein-based multilayered semiconducting 3D material using iron-storage protein ferritin. It is electronically homogeneous; capable of long range electron transport having exciton radius, and shows<italic>z</italic>-confinement.
Abstract A novel reactor was designed and implemented for water purification using deep ultraviolet light emitting diodes (LEDs). The focus on minimizing the number of LEDs required effective germicidal action. Simulation studies were carried out flow as well irradiance UV. Variation made in beam divergence UV sources reflectivity optical coatings used photon recycling. Based optimized designs, both static flow-through configuration. Water from various spiked with a known bacterial strain,...
The detection of a specific spectral line in ultraviolet the presence broadband ambient lighting is necessary for many applications. We report wavelength-selective photodetection using AlGaN multiple quantum wells grown by molecular beam epitaxy. A near-Gaussian photoresponse peak at 300 nm with width 17 was achieved lateral photocurrent, along much faster transient response compared devices based on bulk AlGaN. wavelength selectivity, controlled formation and subsequent splitting excitons,...
Photo-electrochemically active nanostructured (Zn<sub>0.97</sub>Ga<sub>0.03</sub>)(O<sub>0.95</sub>N<sub>0.05</sub>) synthesized by solution combustion technique exhibiting anomalous red emission in room temperature.
AlGaN alloys find important applications in UV emitters and detectors, as well high-power high-frequency electronics. While reflection high energy electron diffraction (RHEED) is a standard technique for situ monitoring of the growth by plasma assisted molecular beam epitaxy, this paper investigates new mode its application. During alloys, ratio group III (Al + Ga) to V (active nitrogen) adatoms critically controls materials property films optimal within very narrow window operation....
We report on the development of deep-ultraviolet (DUV) wavelength-selective top-illuminated photodetectors based AlGaN/AlN quantum-dots-in-wells. Structures consisting 100 AlGaN wells and AlN barriers were grown by plasma-assisted molecular beam epitaxy sapphire substrates. Interdigitated metal–semiconductor–metal photodetector devices formed lithographically using indium as contact metal. The effect variation group III to V flux ratio use a surfactant UV photoresponse determined. Growth...
Zinc Oxide (ZnO) nanowires were deposited by vapor–liquid–solid (VLS) method on to aluminum doped ZnO (AZO) thin films grown sol-gel technique. For various device applications, current injection into such is critical. This expected be more efficient for AZO compared those a foreign substrate as silicon. In this work we compare the morphological and optical properties of with under similar conditions silicon (Si) wafers. silicon, diameters around 44 nm heights 2.2 μm obtained. growth AZO, 90...
In this work, we report on the growth of AlGaN nanostructures by droplet epitaxy process. Initially, well-oriented vertical AlN nanorod clusters were grown to c-plane sapphire substrates Plasma Assisted Molecular Beam Epitaxy (PA-MBE). On top these nanorods an Al0.76Ga0.24N layer was deposited, followed 40 pairs Al0.76Ga0.24N/AlN Multiple Quantum Wells (MQWs). Spontaneously formed nanodots and nanowires observed Field Emission Scanning Electron Microscopy (FESEM) planes arrays. For nearly...
Correction for ‘Anomalous red emission with competition and coexistence of defect band edge in photo-electrochemically active (Zn<sub>0.97</sub>Ga<sub>0.03</sub>)(O<sub>0.95</sub>N<sub>0.05</sub>) solid solution’ by Sumithra Sivadas Menon <italic>et al.</italic>, <italic>RSC Adv.</italic>, 2016, <bold>6</bold>, 103081–103087.