Arijit Roy

ORCID: 0000-0003-2803-8169
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About
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Research Areas
  • Solidification and crystal growth phenomena
  • Luminescence Properties of Advanced Materials
  • nanoparticles nucleation surface interactions
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Aluminum Alloy Microstructure Properties
  • Radiation Detection and Scintillator Technologies
  • Luminescence and Fluorescent Materials
  • Transition Metal Oxide Nanomaterials
  • Perovskite Materials and Applications
  • Metallurgical Processes and Thermodynamics
  • Supercapacitor Materials and Fabrication
  • Fluid Dynamics and Thin Films
  • Block Copolymer Self-Assembly
  • Spacecraft and Cryogenic Technologies
  • Solid State Laser Technologies
  • Cyclone Separators and Fluid Dynamics
  • ZnO doping and properties
  • Electronic and Structural Properties of Oxides
  • Aluminum Alloys Composites Properties
  • Electrocatalysts for Energy Conversion
  • Glass properties and applications
  • Conducting polymers and applications
  • Inorganic Fluorides and Related Compounds
  • IoT-based Smart Home Systems

Kookmin University
2018-2024

Banaras Hindu University
2021-2023

Indian Institute of Technology BHU
2022

Materials Science & Engineering
2022

Indian Institute of Technology Bombay
2015-2021

Seoul National University
2018

Clemson University
2013

Indian Institute of Technology Kharagpur
2009

This study introduces a novel ZnSE electrode fabrication method, stabilizing the (002) crystal plane to reduce Zn dendrite growth, lower HER, and enhance corrosion resistance.

10.1039/d4ta01013b article EN Journal of Materials Chemistry A 2024-01-01

Optical emission spectra of nanocrystalline zinc gallate (ZnGa2O4) and trivalent chromium ion doped (ZnGa2O4:Cr3+) are reported for different concentrations the dopant ion. The measurements have been carried out over temperature range between 77 296 K. spectrum ZnGa2O4 shows two broad peaks. intensity variation in these peaks, with temperature, is indicative effect symmetry breaking electronic band structure samples. In addition, we find that relative intensities sharp spectral lines Cr3+...

10.1063/1.3224866 article EN Journal of Applied Physics 2009-09-15

Although it has been commonly accepted that resistive random access memories (ReRAMs) operate by exploiting the electric field to form or break conducting filaments (CFs), formation of CF still remains elusive and so is correlation physiochemical properties with electrical responses. Using phase model, we show complete between process driven responses in ReRAM systems, specifically electrochemical metallization (ECM) memory cells. We could qualitatively validate all unique I–V...

10.1063/5.0026350 article EN Journal of Applied Physics 2020-11-25

I–V characteristics that are commonly observed in resistive switching memories based on organic or organic–inorganic hybrid materials investigated using a drift–diffusion model. The characteristic current deflection region at specific voltage high-resistance-state (HRS) is predicted the drift-diffusion model and compared with experimental results of methylammonium lead iodide (MALI, CH3NH3PbI3). accumulation oppositely charged defects Debye layers found to play dominant role determining...

10.1063/1.5051499 article EN Applied Physics Letters 2018-11-05

The morphological evolution of the conducting filament (CF) predominantly controls electric response resistive random access memory (ReRAM) devices. However, parameters—in terms material and processing—which control growth such CF are plenty. Extending phase field technique for ReRAM systems presented by Roy Cha [J. Appl. Phys. 128, 205102 (2020)], we could successfully model complete SET (to attain low resistance state) RESET high processes due to application sweeping voltage. key...

10.1063/5.0087758 article EN Journal of Applied Physics 2022-05-10

During solid–solid precipitation, interface free energy anisotropy is known to drive faceting of precipitates. In this paper, using a recently developed phase field formulation based on higher order tensor terms, we develop and implement family models indicate the parameter choices which lead faceted precipitate morphologies. We also how choose parameters given either morphology or interfacial anisotropy. Specifically, study precipitates in systems with cubic hexagonal anisotropies; 2 3D...

10.1080/14786435.2017.1348633 article EN The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics 2017-07-06

A wide range of morphologies, such as dipyramids, rods, plates, and their truncated variants with more than one type facet, are experimentally observed in tetragonal systems. In many cases, the origin these morphologies is strong anisotropy interfacial free energy. Phase field models that restricted to second-rank tensor term for gradient energy coefficient can give rise neither square cross sections nor faceted morphologies. this paper, using phase simulations based on implementation a...

10.1021/acs.cgd.0c01424 article EN publisher-specific-oa Crystal Growth & Design 2021-02-20

We have studied the growth kinetics of isolated precipitates growing from a supersaturated matrix in 3-dimensions (3-D) using phase field models; we assume isotropic interfacial energy consider both constant and variable diffusivity. report compare our numerical rates with classic analytical solutions Zener Frank (ZF). The results deviate ones. These deviations can be understood terms generalised Gibbs-Thomson effect. Specifically, due to higher capillary contribution 3-D (curvature is twice...

10.48550/arxiv.1412.6922 preprint EN other-oa arXiv (Cornell University) 2014-01-01

This research paper presents the knowledge about Humidity prediction model based on Arduino Uno, DHT11 Sensor and 16*2 LCD display. The combines real-time data acquisition with predictive machine learning algorithm to estimate future humidity levels. microcontroller of processes from DHT sensor shows predicted actual in system gives a low-cost user-friendly solution for monitoring various environments. Keyword: UNO, DHT-11,

10.55041/ijsrem34625 article EN INTERANTIONAL JOURNAL OF SCIENTIFIC RESEARCH IN ENGINEERING AND MANAGEMENT 2024-05-27

Formation of oxygen vacancy-rich conducting filament in the metal-oxide insulating layer due to applied electric field is studied using phase modelling. We consider that formation Frenkel defects plays a dominant role process formation. The choice any other type have been neglected consideration charge neutrality. find during initial stages formation, intrinsic defect concentration crucial role. However, late stages, when approaches completion, because increased field, generation new...

10.2320/matertrans.mt-mb2022010 article EN MATERIALS TRANSACTIONS 2022-10-27

We use extended Cahn-Hilliard (ECH) equations to study faceted precipitate morphologies; specifically, we obtain four sided precipitates (in 2-D) and dodecahedron 3-D) in a system with cubic anisotropy, and, six-sided 2-D, the basal plane), hexagonal dipyramids prisms systems anisotropy. Our listing of these ECH is fairly comprehensive complete (upto sixth rank tensor terms Taylor expansion free energy). also show how parameters that enter model are be obtained if either interfacial energy...

10.48550/arxiv.1604.05208 preprint EN other-oa arXiv (Cornell University) 2016-01-01

A wide variety of morphologies arise due to the tetragonal anisotropy in interfacial free energy. In this paper, we report on a family Extended Cahn-Hilliard (ECH) models for incorporating We list non-zero and independent parameters that are introduced our model constraints them. For appropriate choice these parameters, can produce many seen systems such as di-pyramids, rods, plates their truncated variants. analyse show they indeed equilibrium consistent with Wulff construction.

10.48550/arxiv.1708.01712 preprint EN other-oa arXiv (Cornell University) 2017-01-01

The morphological evolution of the conducting filament (CF) predominantly controls electric response resistive random access memory (ReRAM) devices. However, parameters -- in terms material and processing which control growth such CF are plenty. Extending phase field technique for ReRAM systems presented by Roy Cha [J. Appl. Phys. 128, 205102 (2020)], we could successfully model complete SET (low resistance state) RESET (high sates due to application sweeping voltage. key that influence...

10.48550/arxiv.2201.12304 preprint EN cc-by-nc-nd arXiv (Cornell University) 2022-01-01
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