A5026815311- Semiconductor Lasers and Optical Devices
- Semiconductor Quantum Structures and Devices
- Photonic and Optical Devices
- Laser Design and Applications
- Spectroscopy and Laser Applications
- Solid State Laser Technologies
- Advanced Fiber Laser Technologies
- Advanced Optical Sensing Technologies
- Atmospheric Ozone and Climate
- GaN-based semiconductor devices and materials
- Advanced Semiconductor Detectors and Materials
- Photonic Crystals and Applications
- Atmospheric and Environmental Gas Dynamics
- Laser-Matter Interactions and Applications
- Optical Coatings and Gratings
- Integrated Circuits and Semiconductor Failure Analysis
- Magneto-Optical Properties and Applications
- Ocular and Laser Science Research
- Pulsed Power Technology Applications
- Photonic Crystal and Fiber Optics
- Optical Network Technologies
- Semiconductor materials and interfaces
- Terahertz technology and applications
- Near-Field Optical Microscopy
- Quantum optics and atomic interactions
Ioffe Institute
2016-2025
Saint Petersburg State Electrotechnical University
2022-2024
Physical and Technical Institute
2023
National Technical University "Kharkiv Polytechnic Institute"
2020
Russian Academy of Sciences
2006-2015
Physico-Technical Institute
2003-2014
Ministry of Education and Science
2012
International Research and Training Center
2012
Voronezh State University
2006
International Center for Astronomical, Medical and Ecological Research
2005
16 W continuous-wave room temperature front facet output optical power and 74% wallplug efficiency were attained in 100 µm-aperture 1.06 µm-emitting laser diodes with 2–3 mm cavity length. The lasers are based on AlGaAs/GaAs/InGaAs quantum well asymmetric heterostructures 1.7 µm-thick waveguide having 0.34 cm−1 internal loss.
We present an approach to similarity‐based retrieval from knowledge bases that takes into account both the structure and semantics of base fragments. Those fragments, or analogues, are represented as sparse binary vectors allow a computationally efficient estimation structural semantic similarity by vector dot product. representation scheme experimental results for was previously used testing leading analogical models MAC/FAC ARCS. The experiments show proposed single‐stage provides...
Semiconductor lasers based on MOVPE-grown asymmetric separate-confinement heterostructures with a broadened waveguide and emitting in the wavelength range are studied. It is found that intensity of spontaneous emission from active region increases increasing pump current above lasing threshold this caused by growth concentration charge carriers due to modal gain enhancement needed compensate for growing internal optical loss at high pulsed currents. shown increase one main reasons saturation...
Compact high-power sub-nanosecond laser pulse sources with a wavelength of 940 nm are developed and studied. A design for based on vertical stack is proposed, which includes semiconductor chip current switch chip. To create compact high-speed switch, three-electrode heterothyristor developed. It found that the use heterothyristor-based switches allows creation low-loss pump circuit, generating short pulses operating in gain-switching mode. For chip, an asymmetric heterostructure quantum-well...
A dynamic model of a laser thyristor based on semiconductor heterostructure has been developed. The takes into consideration for the first time optically activated impact ionization in space-charge region (SCR) and nonlinear photogeneration excess carriers base region, with latter accounting threshold nature optical emission. It is shown that maximum turn-ON rate determined by SCR collector p-n junction, current, region. satisfactory agreement between calculated experimental voltage current...
This letter shows an experimentally studied approach that increases injection efficiency of high-power laser thyristors emitting in the 890–910 nm spectral band. The developed exhibit 43-W maximum peak output power pulses at 95-nm full width half duration. At same time, amplitude current pulse generated laser-thyristor circuit reached 90 A.
The effect of a local current turn-on in the heterostructure plane has been observed for low-voltage lasers-thyristors. It was shown that spatial dynamics current-turn-on region is determined by blocking voltage and control amplitude. For first mode (blocking voltages up to 15 V), nonuniformity flux distribution spontaneous emission from active laser part side p-base phototransistor heterostructure. transition second exceeding V) due sharp rise generation rate excess carriers In this case,...
An experimental technique for measuring internal optical loss in high-power edge-emitting semiconductor lasers is demonstrated. The based on coupling a probe beam into the waveguide of pulse-pumped laser diode. It allows free-carrier absorption (FCA) heterostructure at different temperatures and pump current levels up to 30 kA/cm2. Measurement results are presented two designs, which vary doping level material. For both heterostructures, increase induces significant rise FCA corresponding...
Abstract Ridge quantum-cascade lasers emitting at a wavelength near 8 μm are fabricated and studied. Lasing room temperature with maximum output peak power exceeding 1 W from one facet is demonstrated.
Experimental light-current characteristics of high-power semiconductor lasers operating at ultrahigh drive currents have been studied in terms numerical models taking into account the effect carrier drift velocity saturation. It was shown that simplest diffusion-drift (DD) model underestimates optical loss high currents, which leads to overestimation peak power when compared with experimental results. The inclusion saturation DD results a strong-electric-field domain is formed interface...
We present a study of near-field dynamics ultrawide-aperture (800 μm) high-power diode lasers pumped by nanosecond current pulses. The studied are based on AlGaAs/InGaAs/GaAs asymmetric heterostructure with wide waveguide and operate at 1060 nm. It is shown that an increased aperture width 800 μm makes it possible to maintain high emission efficiency currents for 3 ns determined lasing turn-on delay inhomogeneous along the aperture. Initial occurs edges, while near center reaches 180-450 ps...
Laser diodes based on AlGaInAs/InP heterostructures with an ultra-narrow waveguide are developed. It is shown that the use of this in conjunction profiled doping ensures a balance between internal optical losses and heat resistance. stripe contact 100 μm wide demonstrate at room temperature output power exceeding 4 W continuous-wave mode 20 pulsed mode.
High-power pulse semiconductor lasers based on epitaxially integrated thyristor heterostructures were developed. The possibility of generating high-power laser light pulses with duration the order 100 ns at control signal amplitude 40–100 mA extremely low turn-on voltage 10 V was demonstrated. values reached for peak optical power and current 28 W 37 A, respectively.
We report an experimental study of power characteristics semiconductor lasers based on MOVPE-grown asymmetric separate-confinement heterostructures with a broadened waveguide as functions cavity length, stripe contact width and mirror reflectivities. It is shown that at high current pump levels, the variation parameters laser (width, length reflectivities) influences light – characteristic saturation maximum optical by affecting such characteristics, density output loss. A model elaborated...