A5057758904- ZnO doping and properties
- Transition Metal Oxide Nanomaterials
- Copper-based nanomaterials and applications
- Gas Sensing Nanomaterials and Sensors
- Semiconductor materials and devices
- Metal and Thin Film Mechanics
- Electronic and Structural Properties of Oxides
- Semiconductor materials and interfaces
- Chalcogenide Semiconductor Thin Films
- Thin-Film Transistor Technologies
- Ga2O3 and related materials
- Intermetallics and Advanced Alloy Properties
- Phase-change materials and chalcogenides
- Advanced Welding Techniques Analysis
- MXene and MAX Phase Materials
- Advanced ceramic materials synthesis
- Quantum Dots Synthesis And Properties
- Copper Interconnects and Reliability
- Multiferroics and related materials
- 3D IC and TSV technologies
- Advanced Thermoelectric Materials and Devices
- Electronic Packaging and Soldering Technologies
- Magnetic and transport properties of perovskites and related materials
- High-Temperature Coating Behaviors
Ming Chi University of Technology
2014-2025
National Taiwan University
2016-2022
β-Zn4Sb3 is a promising thermoelectric material due to its environmental friendliness and suitability for mid-temperature applications. However, maintaining pure β-phase during fabrication remains significant challenge, as phase instabilities often degrade performance. Here, we demonstrate the successful optimization of thin films through controlled Sn doping using ion beam-assisted deposition. By precisely regulating concentration at 0.97 %, preserved, resulting in maximum power factor 1.4...
High Power Impulse Magnetron Sputtering (HiPIMS) has generated a great deal of interest by offering significant advantages such as high target ionization rate, plasma density, and the smooth surface sputtered films. This study discusses deposition copper nitride thin films via HiPIMS at different pressures then examines impact pressure on structural electrical properties Cu3N At low pressure, Cu-rich were obtained, which results in n-type semiconductor behavior When is increased to above 15...
In this work, p-type non-stoichiometric Ni1−xO thin films were deposited by oxygen ion beam assisted RF sputtering on glass substrates. The influence of the flow ratio (0–100%) films’ optoelectronic properties was investigated. our experimental conditions, all are crystallized in cubic NiO phase. However, their crystallinity and mean grain size decreases with increasing ratios. Meanwhile, conductivity improves from 9.1 to 25.4 S·cm−1. This is due fact that nickel vacancies along hole...
In-doped NiO films with indium concentrations ranging from 0 to 30.3 at. % were deposited on glass substrates investigate corresponding structural, optical, and electrical property variations. The x-ray diffraction patterns show that all display only peaks. When In atoms added films, the peaks shifted lower angles, indicating lattice parameters of increased due larger ions substituting for smaller Ni ions. An resistivity (ρ) too high be measured occurred when concentration in film was less...