A5037970969- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Quantum and electron transport phenomena
- Semiconductor Quantum Structures and Devices
- Photonic and Optical Devices
- Nanowire Synthesis and Applications
- Spectroscopy and Laser Applications
- Semiconductor Lasers and Optical Devices
- Electronic and Structural Properties of Oxides
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and interfaces
- Thin-Film Transistor Technologies
- Topological Materials and Phenomena
- Atmospheric Ozone and Climate
- Electron and X-Ray Spectroscopy Techniques
- Physics of Superconductivity and Magnetism
- Magnetic properties of thin films
- Mechanical and Optical Resonators
- Laser Design and Applications
- Advanced Photonic Communication Systems
- Surface and Thin Film Phenomena
- 3D IC and TSV technologies
- Advanced Fiber Laser Technologies
- Quantum-Dot Cellular Automata
- Silicon and Solar Cell Technologies
National Taiwan University
2016-2025
Taiwan Semiconductor Manufacturing Company (Taiwan)
2019-2025
National Applied Research Laboratories
2015-2022
Sandia National Laboratories
2020-2022
University of New Mexico
2022
Center for Integrated Nanotechnologies
2020
Princeton University
2009-2014
City University of Hong Kong
2004
Research Center for Applied Science, Academia Sinica
2004
Nanjing University
1986
Three-layer electroluminescent devices fabricated from 1,3,5-tris(2-(9-ethylcarbazyl-3)ethylene) benzene (TECEB) (see Figure) are shown to exhibit bright and efficient white light with a maximum luminescence current efficiency of 1200 cd m–2 1.1 A–1, respectively. It is suggested that these represent the best reported results for single-emitting-component date.
Abstract Silicon has been a core material for digital computing owing to its high mobility, stability oxide interface, mature manufacturing technologies more than half century. While Moore’s law seems further advance via various extend expiration date, some intractable problems that requires processing times growing exponentially cannot be solved in reasonable scale of time. Meanwhile, quantum is promising tool perform calculations much efficiently classical certain types problems. To...
For the first time, CMOS inverters and 6T-SRAM cells based on vertically stacked gate-all-around complementary FETs (CFETs) are experimentally demonstrated. Manufacturing difficulties of source drain electrodes CFETs have been overcome by using junctionless transistors, thereby reducing number lithographic steps required. Furthermore, with post metallization treatments, both voltage transfer characteristics (VTCs) butterfly curves SRAM show significant improvements due to symmetry nMOS pMOS...
In this article, heterogeneous complementary field-effect-transistor (CFET) constructed by vertically stacking amorphous indium gallium zinc oxide (a-IGZO) n-channel on poly-Si p-channel with their own dielectric layer and work function metal gate inverters were demonstrated. Meanwhile, high-frequency IGZO radio frequency (RF) devices as guard ring material simultaneously fabricated in the same process. High <inline-formula> <tex-math notation="LaTeX">${f}_{\text {T}}$...
A U-gate vertical tunneling field-effect transistor (TFET) of band-to-band (BTBT) normal to the gate at low operation voltages is proposed and investigated by TCAD simulation. In this structure, drive current OFF-state leakage can be separately controlled insertion a spacer layer between channel drain layers. The dominant mechanisms for are BTBT source-to-drain (SDT), respectively. modified structure side gates hetero-spacer enables high-performance InGaAs/GaAsSb heterojunction TFETs with...
Si-based spin qubits are promising due to their long decoherence time and the compatibility with state-of-the-art semiconductor technology have been demonstrated using quantum dots (QDs) host single electrons for manipulation. In this work, we simulate electrostatics transport properties of on a Si metal–oxide–semiconductor platform Si/SiGe heterostructure. We investigate effects gate configurations SiGe spacer thickness device characteristics, such as capacitances, Coulomb blockade, charge...
We report the magneto-transport study and scattering mechanism analysis of a series increasingly shallow Si/SiGe quantum wells with depth ranging from ∼ 100 nm to 10 away heterostructure surface. The peak mobility increases depth, suggesting that charge centers near oxide/semiconductor interface are dominant source. power-law exponent electron versus density curve, μ ∝ nα, is extracted as function Si well. At intermediate densities, dependence characterized by α 2.3. highest achievable...
Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest exploring alternate material platforms that may provide advantages, such enhanced control, longer coherence times, improved extensibility. Recent advances heterostructure growth have opened new possibilities for employing hole spins semiconductors applications. Undoped, strained Ge/SiGe quantum wells promising candidate hosts qubits due to their low...
Abstract Direct‐bandgap germanium‐tin (GeSn) has attracted much interest for high‐performance optoelectronic and electronic device applications. However, the transition from indirect bandgap to direct in GeSn epitaxial films effects on electron transport properties are not fully understood. In this work, populations investigated high‐quality n‐GeSn epitaxially grown using chemical vapor deposition under different strain conditions. Hall measurements performed characterize effective density...
We investigate the effect of surface tunneling on charge distributions two-dimensional hole gases (2DHGs) in undoped Ge/GeSi heterostructures. As electron channel case, 2DHG density saturates at a high gate voltage. depth 2DHGs increases, crossover system from equilibrium to nonequilibrium is observed $\ensuremath{\sim}50$ nm. A model proposed explain crossover. Magnetotransport analysis performed limiting scattering mechanisms. The power law dependence mobility suggests that dominant...
Abstract A demonstration of 2D hole gases in GeSn/Ge heterostructures with a mobility as high 20 000 cm 2 V −1 s is given. Both the Shubnikov–de Haas oscillations and integer quantum Hall effect are observed, indicating sample quality. The Rashba spin‐orbit coupling (SOC) investigated via magneto‐transport. Further, transition from weak localization to anti‐localization which shows tunability SOC strength by gating. magneto‐transport data fitted Hikami–Larkin–Nagaoka formula. phase‐coherence...
We report the magneto-transport, scattering mechanisms, and effective mass analysis of an ultra-low density two-dimensional hole gas capacitively induced in undoped strained Ge/Si0.2Ge0.8 heterostructure. This fabrication technique allows densities as low p ∼ 1.1 × 1010 cm−2 to be achieved, more than one order magnitude lower previously reported doped Ge/SiGe heterostructures. The power-law exponent electron mobility versus curve, μ ∝ nα, is found α 0.29 over most range, implying that...
A Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.955</sub> Sn xmlns:xlink="http://www.w3.org/1999/xlink">0.045</sub> nMOSFET with a record high mobility of 440 cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V · s is demonstrated in this letter by gate-first process. By low-temperature chemical vapor deposition, high-quality GeSn films were epitaxially grown. The ambipolar leakage effectively suppressed the low-thermal-budget...
A record high electron mobility of 698 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V·s in a tensile-strainedGe <sub xmlns:xlink="http://www.w3.org/1999/xlink">0.96</sub> Sn xmlns:xlink="http://www.w3.org/1999/xlink">0.04</sub> nMOSFET is demonstrated this letter. High-quality GeSn films were epitaxially grown by low-temperature chemical vapor deposition. Different strain conditions the active layers achieved Ge or relaxed...
GeSn complementary metal-oxide-semiconductor (CMOS) devices have attracted much attention for future VLSI technology nodes due to high carrier mobility. However, Fermi-level pinning in metal/n-GeSn contacts leads contact resistivity and limits CMOS high-performance logic applications. In this work, we investigate Schottky characteristics the contacts. High-quality n-GeSn layers were epitaxially grown by chemical vapor deposition with an situ doping technique a activation rate of 73% up...
Both depletion-mode and enhancement-mode two-dimensional electron gases (2DEGs) in isotopically enriched 28Si with extremely high mobility (522 000 cm2/V s) are presented. The samples were grown by chemical vapor deposition using silane. fraction of the spin-carrying isotope 29Si was reduced to level 800 ppm enrichment, spin dephasing time expected be as long 2 μs. Remote impurity charges from ionized dopants Si/Al2O3 interface suggested dominant source for scattering 2DEGs.
We propose a feasible pathway to scale the Ge MOSFET technology by using novel diamond-shaped and <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">09</sub> Si xmlns:xlink="http://www.w3.org/1999/xlink">01</sub> gate-all-around (GAA) nanowire (NW) FETs with four {111} facets. The device fabrication requires only simple top-down dry etching blanket epitaxy techniques readily available in mass production. proposed process involves three...
An isotopically enriched 28Si/SiGe undoped heterostructure is a promising platform for Si-based qubits due to the long coherence time by reducing 29Si isotopes with non-zero nuclear spins. Carriers in buried Si quantum well (QW) of Si/SiGe heterostructures could tunnel oxide/Si interface, increasing charge noise and leading instability. In this work, we investigate tunneling effects on carrier distribution transport properties an its transient characteristics controlling hold gate biasing...
We report the strong screening of remote charge scattering sites from oxide/semiconductor interface buried enhancement-mode undoped Si two-dimensional electron gases (2DEGs), by introducing a tunable shielding layer between 2DEG and sites. When high density electrons in silicon quantum well exists, tunneling to surface can lead formation nearly immobile layer. The charges at this newly formed results an increase mobility 2DEG. Furthermore, significant decrease minimum mobile occurs as well....
We investigate the effects of surface tunneling on electrostatics and transport properties two-dimensional electron gases (2DEGs) in undoped Si/SiGe heterostructures with different 2DEG depths. By varying gate voltage, four stages density-mobility dependence are identified two density saturation regimes observed, which confirms that system transitions between equilibrium nonequilibrium. Mobility is enhanced an increasing at low biases and, counterintuitively, a decreasing high as well. The...
Gateable ballistic spin transport is achieved in Ge quantum wells.
For the first time, we demonstrate heterogeneous complementary FETs (hCFETs) with Ge and Si channels fabricated a layer transfer technique. The 3D channel stacking integration particularly employs low-temperature (200 °C) hetero-layers bonding technique (LT-HBT) realized by surface activating chemical treatment at room temperature, enabling bonded onto wafers. Furthermore, to obtain symmetric performance in n/p FETs, multi-channel structure of two-channel one-channel is also implemented....
We propose and demonstrate a polarization splitter, in which the power ratio between transverse electric (TE) magnetic (TM) modes at two output arms can be electrically controlled. The mode-sorting effect off-diagonal electrooptic coefficient of LiNbO/sub 3/ are utilized for splitting conversion, respectively. To simplify design fabrication processes, we apply newly developed zinc nickel codiffusion technique 3/, by TE-, TM-, randomly polarized waveguides all made simply using different...