A5044153768- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena
- Advanced Semiconductor Detectors and Materials
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Terahertz technology and applications
- Semiconductor materials and interfaces
- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Superconducting and THz Device Technology
- Nanowire Synthesis and Applications
- Magnetic Field Sensors Techniques
- Radio Frequency Integrated Circuit Design
- Quantum Dots Synthesis And Properties
- Surface and Thin Film Phenomena
- Spectroscopy and Laser Applications
- Photonic Crystals and Applications
- Diamond and Carbon-based Materials Research
- Silicon Nanostructures and Photoluminescence
- Metal and Thin Film Mechanics
- GaN-based semiconductor devices and materials
- Electronic and Structural Properties of Oxides
- Plasma Diagnostics and Applications
- Laser Design and Applications
- Magnetic confinement fusion research
Moscow Engineering Physics Institute
2015-2024
Institute of Radio-Engineering and Electronics
2003-2018
Joint Institute for Nuclear Research
2017
IMU Institut (Germany)
2016
Russian Academy of Sciences
2002-2013
Institute of Semiconductor Physics
2007-2013
Institute of Superhigh-Frequency Semiconductor Electronics of the Russian Academy of Sciences
2009
Lomonosov Moscow State University
2003-2007
For the first time, results of on-line testing metal Hall sensors based on nano-thickness (50–70) nm gold films, which was conducted under irradiation by high-energy neutrons up to high fluences 1 1024 n m−2, are presented. The has been carried out in IBR-2 fast pulsed reactor neutron flux with intensity 1.5 1017 m−2 s−1 at Joint Institute for Nuclear Research. energy spectrum very close that expected ex-vessel locations ITER experimental reactor. magnetic field sensitivity stable within...
We have measured and calculated effective masses m* the band structure of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well on InP substrate with one or two InAs inserts in GaAs heterointerface barriers. The mass was by Shubnikov?de Haas effect. Double symmetric a lead to decreasing about 10%?35% as compared uniform In0.53Ga0.47As lattice-matched well.
The paper deals with radiation resistant sensors and their associated measuring instrumentation developed in the course of R D activities carried out framework an international collaboration. first trial tests three-dimensional (3D) probes Hall have been performed European tokamaks TORE SUPRA (2004) JET (2005). Later 2009 six sets 3D were installed now continue to operate. statistical analysis 2014 on basis database demonstrated stable long term operation all 18 probes. results measurements...
Spectra of the waveguide loss coefficient for THz radiation a quantum-cascade laser with gold- and silver-based double metal (DMW) are calculated based on measurements resistivity metals different temperatures. It is shown that, taking into account absorption by free carriers optical phonons, spectrum total mode losses has broad minimum in range 3 – 6 THz, which shifts to higher frequencies increasing temperature. The Au-based increase from 8 27 cm–1 as temperature increases 100 300 K. use...
The work presents the results of experimental investigation into effect neutron irradiation on thin-film magnetic field Hall sensors. It is shown that sensors based InSb/i-GaAs heterostructures are promising for application under radiation conditions in thermonuclear reactor diagnostics systems. At same time, presence buffer layers InAs/i-GaAs makes this material unfit flux conditions.
A stack of five metastable 200-nm-thick elastically strained GeSn epitaxial layers separated by 20-nm-thick Ge spacers was grown on (001) Si/Ge virtual substrate MBE. The molar fraction Sn in different varied from 0.005 to 0.10, increasing with the layer distance buffer. phase separation alloy during postgrowth annealing takes place along plastic relaxation. begins well before completion relaxation process. degree at a given temperature depends strongly content alloy. released decomposed...
Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three-monolayer thick AlAs central barrier have been investigated for different widths Si doping levels. The transport parameters are determined by resistivity measurements in the temperature range 4–300 K magnetotransport magnetic fields up to 12 T. (subband) carrier concentrations mobilities extracted from Hall data Shubnikov–de Haas oscillations. We find that strongly affected insertion of barrier. Photoluminescence...
Shape and dimension variation effects on the configurational anisotropy magnetization ground states of single domain triangular nano-magnets are investigated using micromagnetic simulations magnetic force microscopy. We show that introducing concavity or elongating vertexes stabilize Y nanomagnets. A phenomenological model relating triangle geometry parameters is developed. MFM imaging reveals shape defined buckle in good agreement with numeric simulations. Concavity vertex extrusion allow...
The effect of neutron irradiation on the structural, optical, and electronic properties doped strained heterostructures with AlGaAs/InGaAs/GaAs AlGaAs/InGaAs/AlGaAs quantum wells was experimentally studied. Heterostructures a two-dimensional electron gas different layer constructions were subjected to in reactor channel fluence range 2 × 1014 cm−2 ÷ 1.2 1016 cm−2. low-temperature photoluminescence spectra, concentration mobility, high-resolution X-ray diffraction curves measured after...