About
Contact & Profiles
A5114929248
Research Areas
- 2D Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Perovskite Materials and Applications
- Advanced Semiconductor Detectors and Materials
- Nanowire Synthesis and Applications
- Advanced Photocatalysis Techniques
- Advanced biosensing and bioanalysis techniques
- Advancements in Battery Materials
- Electrocatalysts for Energy Conversion
- Semiconductor Quantum Structures and Devices
- Solid-state spectroscopy and crystallography
- Crystal Structures and Properties
- MXene and MAX Phase Materials
Institute of Physics
2023-2024
10.1016/j.mssp.2023.107695
article
EN
Materials Science in Semiconductor Processing
2023-07-11
10.1016/j.mtchem.2025.102611
article
EN
Materials Today Chemistry
2025-03-11
10.1016/j.chemphys.2025.112758
article
EN
Chemical Physics
2025-05-01
The effect on the band alignment of SnSe 2 /GaP heterojunctions was investigated by applying an external electric field and strain perpendicular to interface between two monolayers GaP.
10.1039/d2ce01704k
article
EN
CrystEngComm
2023-01-01
10.1016/j.surfin.2024.105306
article
EN
Surfaces and Interfaces
2024-11-05
10.1016/j.mssp.2023.107822
article
EN
Materials Science in Semiconductor Processing
2023-09-07
The InS/GaTe heterojunction is a typical direct Z-scheme heterojunction, which can change its electronic and optical properties under strain electric fields.
10.1039/d4nj01047g
article
EN
New Journal of Chemistry
2024-01-01
Arsenene/PtO 2 heterojunction: a potential Z-scheme photocatalyst with tunable electronic properties and efficient catalytic activity.
10.1039/d4cy00681j
article
EN
Catalysis Science & Technology
2024-01-01
10.1016/j.mtcomm.2024.111037
article
EN
Materials Today Communications
2024-11-01
10.1016/j.chemphys.2023.112087
article
EN
Chemical Physics
2023-09-26
10.2139/ssrn.5052349
preprint
EN
2024-01-01
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