A5100377438- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Advancements in Battery Materials
- Perovskite Materials and Applications
- Advanced Battery Materials and Technologies
- Gas Sensing Nanomaterials and Sensors
- Advanced Memory and Neural Computing
- 2D Materials and Applications
- Neuroscience and Neural Engineering
- Supercapacitor Materials and Fabrication
- Asphalt Pavement Performance Evaluation
- Ferroelectric and Negative Capacitance Devices
- Advanced Chemical Sensor Technologies
- Advanced battery technologies research
- Advanced Photocatalysis Techniques
- Polyoxometalates: Synthesis and Applications
- MXene and MAX Phase Materials
- Analytical Chemistry and Sensors
- Silicon Carbide Semiconductor Technologies
- Infrastructure Maintenance and Monitoring
- Quantum Dots Synthesis And Properties
- Concrete and Cement Materials Research
- ZnO doping and properties
- Graphene research and applications
- Advanced Measurement and Detection Methods
Shenyang University of Technology
2024
Beihang University
2008-2024
Chang'an University
2023-2024
Hohai University
2024
Fuzhou University
2024
Yanshan University
2023-2024
Peking University
2014-2023
Southwest Jiaotong University
2023
Shaanxi University of Science and Technology
2023
Henan University
2023
The unique features of SnS2 make it a sensitive material ideal for preparing high-performance nitrogen dioxide (NO2) gas sensors. However, sensors based on pristine tin disulfide (SnS2) fail to work at room temperature (RT) owing their poor intrinsic conductivity and weak adsorptivity toward the target gas, thereby impeding wide application. Herein, an ultrasensitive fully recoverable room-temperature NO2 sensor SnS2/SnS p-n heterojunctions with accumulation layer was fabricated. amounts can...
Chiral metal halide perovskites with intrinsic asymmetric structures have drawn increased research interest for the application of second-order nonlinear optics (NLO). However, designing chiral features a large NLO coefficient, high laser-induced damage thresholds (LDT), and environmental friendliness remains major challenge. Herein, we synthesized two hybrid bismuth halides: (R/S-MBA)4Bi2Br10 spiral structure microplates, templated by (R/S)-methylbenzylamine (R/S-MBA). The as-grown...
In this paper, an analytical model of the channel surface potential in tunnel field effect transistors (TFETs) is established and verified. The dual-modulation effects TFETs that alternatively controlled by gate bias drain different operating regimes are emphasized studied. transition point corresponding to switching between two also analyzed quantitatively. For first time, a closed-form TFETs, including impacts both voltage proposed. Furthermore, compact current TFET-based on derived...
In this paper, a novel heterostacked tunnel FET (HS-TFET) is proposed for steeper average subthreshold swing (SS). Different from conventional TFETs, HS-TFETs owns stacked source configuration consisting of an upper layer with relatively larger bandgap material and underlying smaller materials. Since materials exhibit much higher band-to-band tunneling efficiency, the HS-TFET could provide extra drain current increment increasing gate voltage, thus effectively improve characteristics SS. The...
Polyoxometalates (POMs) have shown great potential in sodium-ion batteries (SIBs) due to their reversible multielectron redox property and high ionic conductivity. Currently, POM-based SIBs suffer from the irreversible trapping sluggish transmission kinetics of Na+. Herein, a series POMs/metal-organic frameworks (MOFs)/graphene oxide (GO) (MOFs = MIL-101, MIL-53, MIL-88B; POM [PMo12O40]3-, denoted as PMo12) composites are developed SIB anode materials for first time. Unlike MIL-101 with...
In this paper, a novel TFET design, called Pocket-mSTFET (PMS-TFET), is proposed and experimentally demonstrated by evaluating the performance from device metrics to circuit implementation for low-power SoC applications. For first time, design perspective, TFETs in terms of I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> , xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> subthreshold slope (SS), output behavior, capacitance,...
Van der Waals heterostructures composed of two-dimensional (2D) transition metal dichalcogenides (TMD) materials have stimulated tremendous research interest in various device applications, especially energy-efficient future-generation electronics. Such ultra-thin stacks as tunnel junction theoretically present unprecedented possibilities tunable relative band alignment and pristine interfaces, which enable significant performance enhancement for steep-slope tunneling transistors. In this...
Recently, several lead halide perovskites have been demonstrated as functional materials with hydrochromic, thermochromic, and photochromic properties for anticounterfeiting applications. However, their toxicity relatively poor stability are still drawbacks large-scale practical In this work, we report the reversible water-triggered fluorochromism of copper-based perovskites, which utilize crystalline phase transition between Cs3Cu2I5 CsCu2I3. The custom-designed images printed using ink...
Improving the low-temperature performance of lithium–sulfur batteries is significant for future applications. Meanwhile, a low temperature often leads to sluggish charge transfer kinetics and energy output. Herein, we designed thick freestanding TiO2 nanoparticle-embedded three-dimensional carbon composite (TiO2@C@CSC) host with high directional channels, aiming at achieving high-performance battery. The carbon-coated nanoparticles (TiO2@C) are derived from polyimide-coated embedded in...
Deep brain stimulation (DBS) is a promising therapy for treatment-resistant depression, while mechanisms underlying its therapeutic effects remain poorly defined. Increasing evidence has revealed an intimate association between the lateral habenula (LHb) and major suggests that LHb might be effective target of DBS depression. Here, we found in effectively decreased depression-like behaviors rats experienced with chronic unpredictable mild stress (CUMS), well-accepted paradigm modeling...
Recently, it has become very important to develop cost-effective anode materials for the large-scale use of lithium-ion batteries (LIBs). Polyoxometalates (POMs) have been considered as one most promising alternatives LIB electrodes owing their reversible multi-electron-transfer capacity. Herein, Keggin-type [PMo12 O40 ]3- (donated PMo12 ) clusters are anchored onto a 3D microporous carbon framework derived from ZIF-8 through electrostatic interactions. The can be immobilized steadily and...
The realized artificial flexible carbon nanotube synaptic transistors possess low operating voltage, quick response and ultra-low power consumption, indicating their high potential in biological systems intelligence systems.
Abstract Developing super stability, high coulomb efficiency, and long‐span life of sodium‐ion batteries (SIBs) can significantly widen their practical industrial applications. In this study, we report a pine‐derived carbon/SnS 2 @reduced graphene oxide (PDC/SnS @rGO) film with fast ion/electron transport micro‐channel used as SIB anode, which shows ultrahigh stable stability life. Functionally, biomass PDC/SnS @rGO ~30 μm micro carbon channel ~1.2 thick wall simultaneously provide the...
The coexistence and interaction of excitatory inhibitory neurotransmitters at biological synapses enable bilingual communication, serving as a physiological foundation for organism adaptation, internal stability, regulation behavior emotions in mammals. Neuromorphic electronics are expected to emulate the functions nervous system artificial neurorobotics neurorehabilitation. Here, we have proposed bidirectional neuristor array, which utilizes ion migration electrostatic coupling properties...
An oxygen gas microsensor based on nanostructured sol-gel TiO2 thin films with a buried Pd layer was developed silicon substrate. The titania for O2 sensors were prepared by the process and became anatase after heat treatment. A sandwich square board an area of 350 μm × defined both wet etching dry processes one applied in final due to its advantages easy control structure. pair 150 nm Pt micro interdigitated electrodes 50 Ti buffer fabricated lift-off process. sensor chip tested furnace...
We have first manufactured Complementary Tunnel-FETs (C-TFETs) in standard 12-inch CMOS foundry. With abrupt tunnel junction consideration for improved TFET performance, technology of monolithically integrating C-TFET with is developed. Planar Si inverter also demonstrated, indicating a new electrical isolation requirement between neighboring devices practical integration on bulk substrate. For high-volume production, the variability C-TFETs are experimentally investigated, demonstrating an...