A5100623419- Ga2O3 and related materials
- ZnO doping and properties
- GaN-based semiconductor devices and materials
- Gas Sensing Nanomaterials and Sensors
- Perovskite Materials and Applications
- Nanowire Synthesis and Applications
- Strong Light-Matter Interactions
- Quantum Dots Synthesis And Properties
- Chalcogenide Semiconductor Thin Films
- Thermal Radiation and Cooling Technologies
- Photonic and Optical Devices
- Transition Metal Oxide Nanomaterials
- 2D Materials and Applications
- Plasmonic and Surface Plasmon Research
- Analytical Chemistry and Sensors
- Conducting polymers and applications
- Advanced Sensor and Energy Harvesting Materials
- Semiconductor Quantum Structures and Devices
- Vehicle emissions and performance
- Advanced Combustion Engine Technologies
- Thin-Film Transistor Technologies
- Metamaterials and Metasurfaces Applications
- Energy Harvesting in Wireless Networks
- Luminescence and Fluorescent Materials
- Fuel Cells and Related Materials
Nanjing University of Aeronautics and Astronautics
2019-2025
Chongqing University
2024-2025
State Grid Corporation of China (China)
2024
Beijing Institute of Technology
2022-2024
Soochow University
2021-2023
Tsinghua University
2022-2023
Dalian University of Technology
2014-2021
Huazhong University of Science and Technology
2005-2021
Nanjing Library
2020-2021
Harbin Institute of Technology
2019-2021
The unique features of SnS2 make it a sensitive material ideal for preparing high-performance nitrogen dioxide (NO2) gas sensors. However, sensors based on pristine tin disulfide (SnS2) fail to work at room temperature (RT) owing their poor intrinsic conductivity and weak adsorptivity toward the target gas, thereby impeding wide application. Herein, an ultrasensitive fully recoverable room-temperature NO2 sensor SnS2/SnS p-n heterojunctions with accumulation layer was fabricated. amounts can...
In this report, we developed an additive-free synthesis of In2O3 cubes embedded into graphene networks with InN nanowires (InN-NWs) and oxide (GO) as precursors by a facile one-step microwave-assisted hydrothermal method. absence GO, the InN-NWs maintained their chemical composition original morphology upon same treatment. At varying mass ratios different morphologies distributions could be obtained on sheets. The uniform distribution, which is usually considered favorable for enhanced...
Pb-free perovskite material is considered to be a promising utilized in next-generation X-ray detectors due its high absorption coefficient, decent carrier transport properties, and relatively low toxicity. However, the pixelation of with an industry-level photolithography processing method remains challenging poor structural stability. Herein, we use Cs2AgBiBr6 as prototype investigate interaction photolithographic polar solvents. Inspired by that, propose wafer-scale patterning method,...
Low-power, flexible, and integrated photodetectors have attracted increasing attention due to their potential applications of photosensing, astronomy, communications, wearable electronics, etc. Herein, the samples ZnO microwires having p-type (Sb-doped ZnO, ZnO:Sb) n-type (Ga-doped ZnO:Ga) conduction properties were synthesized individually. Sequentially, a p-n homojunction vertical structure photodiode involving single ZnO:Sb microwire crossed with ZnO:Ga microwire, which can detect...
Flexible ultraviolet (UV) photodetectors are considered as potential building blocks for future-oriented photoelectric applications such flexible optical communication, image sensors, wearable devices and so on. In this work, high-performance UV photodetector was fabricated via a facile combination of single ZnO microwire (MW) p-type polyaniline. Due to the formation effective organic/inorganic p-n junction, as-prepared based on MW/polyaniline hybrid heterojunction exhibits high performance...
Abstract Low‐dimensional polarization‐sensitive photodetectors have captured ever‐increasing attention due to their unique applications in navigation, optical switching, and communication. However, date, the study of dimensionality‐dependent has not received much attention. Herein, a double‐faced photodetector based on an individual high‐quality Sb 2 Se 3 microbelt is proposed, where both wide narrow side facets serve as irradiation targets. Polarization‐sensitive measurements reveal...
Graphene monolayer has been extensively applied as a transparency electrode material in photoelectronic devices due to its high transmittance, carrier mobility, and ultrafast dynamics. In this study, high-performance self-powered photodetector, which is made of SnO2 microwire, p-type GaN film, graphene transparent electrode, was proposed fabricated. The detector sensitive ultraviolet light signals illustrates pronounced detection performances, including peak responsivity ∼ 223.7 mA W–1,...
As a typical broad bandgap semiconductor, ZnO has received considerable attention for developing optoelectronic devices in ultraviolet wavelengths, but suffers from lack of high-quality single-crystalline p-type ZnO. Herein, we report the realization homojunction photodetector, which involves Sb-doped microwire (ZnO:Sb MW) and n-type layer. The conductivity as-synthesized ZnO:Sb MWs was evidenced using an individual wire field-effect transistor. Due to its good rectifying ability excellent...
Abstract Pyro‐phototronic effect, a coupling of pyroelectric and photovoltaic provides an effective method to improve the performance self‐powered photodetectors (PDs). Developing high‐performance PDs, influence effect on photoelectric characteristics mechanism deserves further study. Herein, PD made Ga‐incorporated ZnO microwire (ZnO:Ga MW) p + ‐GaN layer is fabricated, influenced by pyro‐phototronic investigated systematically. Through varying Ga concentration in ZnO:Ga MWs, current...
Abstract Polarization‐sensitive photodetectors (PDs) based on anisotropic materials spark considerable interest for their potential applications in security surveillance, optical switches, and remote sensing. However, high‐thickness or bulk generally exhibit low polarization sensitivity, hindering practical photodetection. Herein, a near‐infrared (NIR) PD p‐type Sb 2 Se 3 microbelt (MB)/n‐GaN heterojunction is proposed. The MB/GaN effectively combines the anisotropy of MB with heterogeneous...
An electrically driven low-threshold exciton-polariton microlaser diode based on an n-ZnO:Ga microribbon/p-GaN heterojunction was realized.
Abstract To realize the advantageous combination of microelectronic integrated circuit technology and photonic technology, development high‐speed, low‐power, chip‐integrated photodetection devices is extremely critical. Here, a large‐scale on‐chip integration photodetector array on Si wafer consisting 21×21 GaN p‐n homojunction pixels prepared. The subunit has significant photovoltaic performance at bias voltage 0 V, including high responsivity 229.5 mA W −1 , outstanding specific...
The realization of micro/nanosized electrically pumped laser diodes, which show unique advantages including minimized footprint, ultralow threshold, energy-efficiency, and single-frequency characteristics, is hoped to feature as an indispensable unit in optoelectronic photonic integrated circuits. Herein, we present a single-mode microlaser diode driven by electricity. This comprises n-type AlGaN film coated with SnO2 nanolayer, Pt nanoparticle-modified ZnO microwire via Ga impurity...
Abstract Low‐dimensional ternary silver halide (CsAg 2 I 3 ), an emerging inorganic lead‐free perovskite, has garnered significant scientific attention due to its strong quantum confinement effects, wide bandgaps, non‐toxicity, and others. However, the photophysical properties optoelectronic performance of CsAg materials devices are significantly compromised by crystal quality defects arising from liquid‐phase preparation. Herein, 1D single crystals newly grown chemical vapor deposition...
Ultraviolet light-emitting materials and devices with high-efficiency are required for many applications. One promising way to enhance the ultraviolet luminescence efficiency is by incorporating plasmonic nanostructures. However, a large energy mismatch between plasmons light emitters greatly limits direct realization of enhancement. In this work, single Ga-doped ZnO microwire prepared large-sized Ag nanoparticle (the diameter
In the present study, a heterojunction made of an individual ZnO microwire via Ga incorporation (ZnO:Ga MW) with p-Si substrate was constructed to develop self-powered ultraviolet photodetector. When operated under illumination 370 nm light power density ∼ 0.5 mW/cm 2 , device exhibited excellent responsivity 0.185 A/W, large detectivity 1.75×10 12 Jones, and stability repeatability. The also high on/off photocurrent ratio up 10 3 short rising falling time 499/412 μ s. By integrating...
With the disadvantages of indirect band gap, low carrier mobility, and large lattice mismatch with other semiconductor materials, one current challenges in Si-based materials structures is to prepare low-dimensional high-performance optoelectronic devices. In this work, an individual ZnO microwire via Ga-incorproration (ZnO:Ga MW) was employed a light-emitting/detecting bifunctional heterojunction structure, combined p-type Si crystal wafer as hole transporting layer. forward-bias regime,...