- Ga2O3 and related materials
- ZnO doping and properties
- GaN-based semiconductor devices and materials
- Nanowire Synthesis and Applications
- Photonic and Optical Devices
- Gas Sensing Nanomaterials and Sensors
- Perovskite Materials and Applications
- Plasmonic and Surface Plasmon Research
- Quantum Dots Synthesis And Properties
- Semiconductor Quantum Structures and Devices
- Strong Light-Matter Interactions
- Photonic Crystals and Applications
- Gold and Silver Nanoparticles Synthesis and Applications
- Metamaterials and Metasurfaces Applications
- Optical Coatings and Gratings
- 2D Materials and Applications
- Thermal Radiation and Cooling Technologies
- Advanced Photocatalysis Techniques
- Transition Metal Oxide Nanomaterials
- Advanced Sensor and Energy Harvesting Materials
- Chalcogenide Semiconductor Thin Films
- Advanced Fiber Laser Technologies
- Electronic and Structural Properties of Oxides
- Semiconductor Lasers and Optical Devices
- Random lasers and scattering media
Nanjing University of Aeronautics and Astronautics
2018-2025
Ministry of Industry and Information Technology
2020-2025
China Medical University
2024-2025
Chinese PLA General Hospital
2025
Zhejiang Sci-Tech University
2023-2024
Xian Central Hospital
2024
Chinese Academy of Sciences
2012-2023
Shenyang University of Chemical Technology
2023
Institute of Geology and Geophysics
2019-2023
Kunming Medical University
2020-2022
High-performance solar-blind (200-280 nm) avalanche photodetectors (APDs) were fabricated based on highly crystallized ZnO-Ga2O3 core-shell microwires. The responsivity can reach up to 1.3 × 10(3) A/W under -6 V bias. Moreover, the corresponding detectivity was as high 9.91 10(14) cm·Hz(1/2)/W. device also showed a fast response, with rise time shorter than 20 μs and decay of 42 μs. quality detectors in waveband is comparable or even higher that commercial Si APD (APD120A2 from Thorlabs...
We demonstrate a novel ZnO self-powered photodetector based on the asymmetric metal-semiconductor-metal structure: one Au interdigitated electrode with wide fingers and other narrow fingers.
In a dual active bridge (DAB) dc-dc converter, modulating the phase-shift ratios can suppress reactive power and increase efficiency under non-unity voltage gain conditions. Derivation of optimal to achieve minimum is challenging because DAB operate in four different scenarios (forward/backward, buck/boost) each scenario has five operating modes. This paper first introduces transformation which be equivalent one another; then optimization only (forward/buck) required. Next, for modes...
Ga2O3 photodetectors with interdigitated electrodes have been designed and fabricated, the area exposed to illumination acts as active layer of photodetector, while covered by Au interdigital electrode provide an arena for carrier multiplication. The show a maximum responsivity at around 255 nm cutoff wavelength 260 nm, which lies in solar-blind region. photodetector reaches 17 A/W when bias voltage is 20 V, corresponds quantum efficiency 8228%, amongst best value ever reported film based...
Although nitrogen-doped zinc oxide has been fabricated as a light-emitting diode, the origin of its p-type conductivity remains mysterious. Here, by analyzing surface reaction pathway N in ZnO with first-principles density functional theory calculations, we demonstrate that N-doped can originate from defect complexes N(Zn)-V(O) and N(O)-V(Zn). Favored Zn-polar growth, shallow acceptor N(O)-V(Zn) actually evolves double-donor state N(Zn)-V(O). While is metastable, p-doping mechanism...
We proposed and demonstrated Ag nanoparticles (NPs)-decorated ZnO photodetectors for UV light sensing. After decoration of their surface with random NPs, the dark current density decreases obviously. Moreover, device exhibits an obvious increase in peak responsivity at around 380 nm, which can be attributed to narrow-band quadrupole plasmon resonance NPs range. Meanwhile, other wavelengths a lot. As result, response becomes more significant, devices presents excellent wavelength selectivity...
Broadband responsivity enhancement of single Se microtube (Se‐MT) photodetectors in the UV–visible region is presented this research. The pristine Se‐MT photodetector demonstrates broadband photoresponse from 300 to 700 nm with peak ≈19 mA W −1 at 610 and fast speed (rise time 0.32 ms fall 23.02 ms). To further enhance photodetector, Au Pt nanoparticles (NPs) are sputtered on these devices. In contrast only UV by NPs, (≈600% ≈800%) realized tuning size density NPs. phenomena interpreted both...
A novel CdMoO4 -ZnO composite film is prepared by spin-coating microplates on ZnO and constructed as a heterojunction photodetector (PD). With an optimized loading amount of microplates, this PD achieves ≈18-fold higher responsivity than pure at 5 V bias under 350 nm (0.15 mW cm-2 ) UV light illumination, its decay time shortens to half the original value. Furthermore, Au nanoparticles are then deposited modify film, as-constructed with deposition yields approximately two-fold photocurrent...
Fourier microscopy is becoming an increasingly important tool for the analysis of optical nanostructures and quantum emitters. However, achieving quantitative space measurements requires a thorough understanding impact aberrations introduced by microscopes that have been optimized conventional real-space imaging. Here we present detailed framework analyzing performance microscope objectives several common imaging configurations. To this end, model from Nikon, Olympus, Zeiss using parameters...
Engineering the lasing-mode oscillations effectively within a laser cavity is relatively updated attentive study and perplexing issue in field of physics applications. Herein, we report realization electrically driven single-mode microlaser, which composed gallium incorporated zinc oxide microwire (ZnO:Ga MW) with platinum nanoparticles (PtNPs, d ~ 130 nm) covering, magnesium (MgO) nanofilm, Pt p-type GaN substrate. The modes could resonate following whispering-gallery mode (WGM) among six...
In this work, a solar-blind UV photodetector array is fabricated and discussed, based on metalorganic chemical vapor deposition-grown β-Ga2O3 thin film, toward optical communication application. The high-performance unit shows significant photo-to-dark current ratio of 3.4 × 105, high responsivity 61.3 A/W, an external quantum efficiency 3 104%, specific detectivity 5.2 1014 Jones, fast response time 35 ms. addition, UV/visible light rejection 2.43 102 achieved, suggesting decent spectral...
Low-dimensional ZnO, possessing well-defined side facets and optical gain properties, has emerged as a promising material to develop ultraviolet coherent light sources. However, the realization of electrically driven ZnO homojunction luminescence laser devices is still challenge due absence reliable p-type ZnO. Herein, sample microwires doped by Sb (ZnO:Sb MWs) was synthesized individually. Subsequently, conductivity examined using single-MW field-effect transistor. Upon pumping, ZnO:Sb MW...
In this letter, an improved Ga2O3 solar-blind photodetector is introduced. Using the thin film grown by metalorganic chemical vapor deposition, localized surface plasmon resonance enhanced photo-response discussed in view of light absorbance and carrier injection. By introducing Pt nanoparticles to decorate photodetector, responsivity, detectivity, external quantum efficiency are increased from 0.13 A/W, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Low-power, flexible, and integrated photodetectors have attracted increasing attention due to their potential applications of photosensing, astronomy, communications, wearable electronics, etc. Herein, the samples ZnO microwires having p-type (Sb-doped ZnO, ZnO:Sb) n-type (Ga-doped ZnO:Ga) conduction properties were synthesized individually. Sequentially, a p-n homojunction vertical structure photodiode involving single ZnO:Sb microwire crossed with ZnO:Ga microwire, which can detect...
Electrically driven wavelength‐tunable light emission from biased individual Ga‐doped ZnO microwires (ZnO:Ga MWs) is demonstrated. Single crystalline ZnO:Ga MWs with different Ga‐doping concentrations have been synthesized using a one‐step chemical vapor deposition method. Strong electrically MW based devices realized tunable colors, and the region localized toward center of wires. Increasing concentration in can lead to redshift electroluminescent emissions visible range. Interestingly,...
A capacitor voltage balancing method for a modular multilevel dc (MMDC) converter is proposed. The MMDC inherits the desirable features of both (MMC) and dual active bridge, namely high capability, fault tolerance, zero-voltage switching-on all power devices, wide operating range. These are ideal transformer in any distribution system. One key control issue submodule voltages. Conventional MMC techniques cannot be used as arm currents an change direction within each switching cycle. This...
An enhanced spectral response was realized in an AlGaN-based solar-blind ultraviolet (SB-UV) detector using aluminum (Al) nanoparticles (NPs) of 20-60 nm. The peak responsivity the (about 288 nm) with 60 nm Al NPs is more than two times greater that a without under 5-V bias, reaching 0.288 A/W. To confirm enhancement mechanism NPs, extinction spectra were simulated time-domain and frequency-domain finite-element methods. calculation results show dipole surface plasmon resonance wavelength...
Abstract With unique ability to concentrate and manipulate light at nanoscale, surface plasmon resonance technologies create additional opportunities for fabricating superintegration photodetectors with desirable functionalities. To gain an insight into the state‐of‐the‐art of plasmonic photodetectors, recent advances in novel devices as well potential building blocks are presented herein. The article focuses particularly on understanding enhancement mechanism different architectures such...
Flexible ultraviolet (UV) photodetectors are considered as potential building blocks for future-oriented photoelectric applications such flexible optical communication, image sensors, wearable devices and so on. In this work, high-performance UV photodetector was fabricated via a facile combination of single ZnO microwire (MW) p-type polyaniline. Due to the formation effective organic/inorganic p-n junction, as-prepared based on MW/polyaniline hybrid heterojunction exhibits high performance...
Abstract Low‐dimensional polarization‐sensitive photodetectors have captured ever‐increasing attention due to their unique applications in navigation, optical switching, and communication. However, date, the study of dimensionality‐dependent has not received much attention. Herein, a double‐faced photodetector based on an individual high‐quality Sb 2 Se 3 microbelt is proposed, where both wide narrow side facets serve as irradiation targets. Polarization‐sensitive measurements reveal...
Graphene monolayer has been extensively applied as a transparency electrode material in photoelectronic devices due to its high transmittance, carrier mobility, and ultrafast dynamics. In this study, high-performance self-powered photodetector, which is made of SnO2 microwire, p-type GaN film, graphene transparent electrode, was proposed fabricated. The detector sensitive ultraviolet light signals illustrates pronounced detection performances, including peak responsivity ∼ 223.7 mA W–1,...