A5103543839- Ga2O3 and related materials
- ZnO doping and properties
- Magnetic properties of thin films
- GaN-based semiconductor devices and materials
- Nanowire Synthesis and Applications
- Gas Sensing Nanomaterials and Sensors
- Strong Light-Matter Interactions
- Thermal Radiation and Cooling Technologies
- Perovskite Materials and Applications
- Magneto-Optical Properties and Applications
- Semiconductor Quantum Structures and Devices
- Characterization and Applications of Magnetic Nanoparticles
- Physics of Superconductivity and Magnetism
- Magnetic Properties and Applications
- Liquid Crystal Research Advancements
- Analytical Chemistry and Sensors
- Magnetic and transport properties of perovskites and related materials
- Copper Interconnects and Reliability
- Advanced Photocatalysis Techniques
- 2D Materials and Applications
- Laser-induced spectroscopy and plasma
- Plasmonic and Surface Plasmon Research
- Theoretical and Computational Physics
- Quantum Dots Synthesis And Properties
- Water Quality Monitoring and Analysis
Nanjing University of Aeronautics and Astronautics
2020-2024
Nanjing Library
2020-2021
Ministry of Industry and Information Technology
2020-2021
East China Normal University
2016
Liaoning Normal University
2012
Hitachi (Japan)
2009
Hitachi Global Storage Technologies (United States)
2005-2009
IBM (United States)
1999-2003
New York University
2002
Vanderbilt University
1991
Low-dimensional ZnO, possessing well-defined side facets and optical gain properties, has emerged as a promising material to develop ultraviolet coherent light sources. However, the realization of electrically driven ZnO homojunction luminescence laser devices is still challenge due absence reliable p-type ZnO. Herein, sample microwires doped by Sb (ZnO:Sb MWs) was synthesized individually. Subsequently, conductivity examined using single-MW field-effect transistor. Upon pumping, ZnO:Sb MW...
Low-power, flexible, and integrated photodetectors have attracted increasing attention due to their potential applications of photosensing, astronomy, communications, wearable electronics, etc. Herein, the samples ZnO microwires having p-type (Sb-doped ZnO, ZnO:Sb) n-type (Ga-doped ZnO:Ga) conduction properties were synthesized individually. Sequentially, a p-n homojunction vertical structure photodiode involving single ZnO:Sb microwire crossed with ZnO:Ga microwire, which can detect...
As a typical broad bandgap semiconductor, ZnO has received considerable attention for developing optoelectronic devices in ultraviolet wavelengths, but suffers from lack of high-quality single-crystalline p-type ZnO. Herein, we report the realization homojunction photodetector, which involves Sb-doped microwire (ZnO:Sb MW) and n-type layer. The conductivity as-synthesized ZnO:Sb MWs was evidenced using an individual wire field-effect transistor. Due to its good rectifying ability excellent...
A highly sensitive self-biased ultraviolet (UV) photodetector is largely desirable in practical applications. This work develops a one-dimensional ZnO homojunction photodiode, which includes an Sb-doped microwire with surface-covered by Ag nanowires (AgNWs@ZnO:Sb MW), MgO buffer nanolayer, and film. The photodiode dramatically to UV light, its photosensitive performances of large on/off ratio approximately 107, maximum responsivity 292.2 mA W−1, high specific detectivity 6.9 × 1013 Jones,...
An electrically driven low-threshold exciton-polariton microlaser diode based on an n-ZnO:Ga microribbon/p-GaN heterojunction was realized.
Abstract To realize the advantageous combination of microelectronic integrated circuit technology and photonic technology, development high‐speed, low‐power, chip‐integrated photodetection devices is extremely critical. Here, a large‐scale on‐chip integration photodetector array on Si wafer consisting 21×21 GaN p‐n homojunction pixels prepared. The subunit has significant photovoltaic performance at bias voltage 0 V, including high responsivity 229.5 mA W −1 , outstanding specific...
The realization of micro/nanosized electrically pumped laser diodes, which show unique advantages including minimized footprint, ultralow threshold, energy-efficiency, and single-frequency characteristics, is hoped to feature as an indispensable unit in optoelectronic photonic integrated circuits. Herein, we present a single-mode microlaser diode driven by electricity. This comprises n-type AlGaN film coated with SnO2 nanolayer, Pt nanoparticle-modified ZnO microwire via Ga impurity...
This article reports on the properties of media prepared glass substrates which were used in IBM’s 10 Gbit/in.2 demonstration. In order to support a linear density 315 kbpi and track 33 ktpi, remanant coercivity Hcr moment thickness product Mrt magnetic layer 3450 Oe 0.37 memu/cm2, respectively. The NiAl seed layer, CrV underlayer, Co alloy carbon overcoat protection layer. film had grain size 12 nm as observed by transmission electron microscopy. preferred orientation (PO) was (101̄0). PO...
With the disadvantages of indirect band gap, low carrier mobility, and large lattice mismatch with other semiconductor materials, one current challenges in Si-based materials structures is to prepare low-dimensional high-performance optoelectronic devices. In this work, an individual ZnO microwire via Ga-incorproration (ZnO:Ga MW) was employed a light-emitting/detecting bifunctional heterojunction structure, combined p-type Si crystal wafer as hole transporting layer. forward-bias regime,...
SnO2 has been extensively applied in the fields of optoelectronic devices because its large band gap, high exciton binding energy, and outstanding optical/electrical properties. However, applications ultraviolet light-emitting diodes (LEDs) are still hindered by dipole-forbidden rule. Herein, rule can be conquered synthesizing Sb-incorporated microwires (SnO2:Sb MWs), which examined photoluminescence emitting at 363.2 nm a line width 11.3 nm. Subsequently, highly monochromatic diode (LED)...
Polarization-sensitive detection and imaging have many significant applications in target recognition, optical switches, industrial inspection, so on. Herein, on-chip near-infrared photodetectors based on individual Sb2Se3 microbelt/Si van der Waals heterojunction with MXene transmittance window were designed. The fabricated photodetector displays a broad spectral response that spans the visible to light regions, as well peak photoresponse at wavelength of 1000 nm. optimized exhibits...
Polarization-sensitive ultraviolet photodetectors have a wide range of applications in remote sensing, analytical imaging, information encryption, and anti-counterfeiting. Herein, one-dimensional tin dioxide (SnO 2 ) single crystals by using the chemical vapor deposition (CVD) method are reported. The high in-plane anisotropic structure, phonon vibrations, refractive index SnO experimentally elucidated. Based on CVD-grown crystals, mixed-dimensional /MoS van der Waals (vdWs) heterostructure...
Abstract Perovskite ferroelectrics with switchable spontaneous polarization have aroused widespread attention due to their potential applications in nonvolatile memory, optoelectronic detection, and so forth, yet they face challenges like insufficient thermal stability, structural brittleness, lead toxicity concerns, other aspects. This paper presents the first well‐defined synthesis of one‐dimensional (1D) lead‐free ferroelectric CsCu 2 Br 3 single‐crystals (SCs), which possess a wide...
Thermal stability will ultimately limit the maximum areal density achievable with conventional longitudinal recording. The key aspects of media microstructure contributing to thermal are grain size and distribution, alloy composition, segregation, lattice defects strain. Grain distributions created by random nucleation processes occurring during deposition. For on glass substrates, c-axis in-plane preferred orientation can be achieved either Co (112~0) or (101~0) planes parallel substrate...
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="m1"> <mml:mrow> <mml:msub> <mml:mi>SnO</mml:mi> </mml:mrow> <mml:mn>2</mml:mn> </mml:msub> </mml:math> has attracted considerable attention due to its wide bandgap, large exciton binding energy, and outstanding electrical optoelectronic features. Owing the lack of reliable reproducible p-type id="m2"> , many challenges on developing id="m3"> -based devices their practical applications still remain. Herein,...
Developing current-driven single-mode micro-/nanolasers is highly desirable for various practical applications, but still faces severe challenges. Herein, a continuous-wave operation of an electrically driven laser device using Ga-incorporated n-type ZnO microwire, MgO nanofilm, and p-type GaAs substrate demonstrated. The can enable lasing peaking at 820 nm narrow linewidth about 0.4 nm, the quality factor Q evaluated to 2000. presence distinct threshold, sharp reduction, polarized coherent...
Exciton-polariton LED composed of a ZnO:Ga MW and p-GaAs template serving hole supplier is demonstrated, its working characteristics in the near-infrared spectrum.
Flexible solar-blind Schottky photodetectors made of individual β-Ga 2 O 3 microwires (MWs) and Ti C T x (MXene) on a PET substrate are designed.
Solar-blind ultraviolet photodetectors with high sensitivity and rapid photoresponse time are indispensable for practical applications in medical imaging diagnostics, military surveillance, advanced manufacturing, other fields. This study presents a high-performance self-powered solar-blind photodetector, which is based on Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> microwire...
A recording density of 35 Gbits/in/sup 2/ was achieved in longitudinal media with high-sensitivity GMR heads. The displayed excellent thermal stability as a result CoPtCrB alloy high magnetocrystalline anisotropy and relatively narrow grain size distribution. degree Co easy-axis orientation the plane /spl mu/m greatly improved reduced on glass substrates. Estimates switching volume from dynamic coercivity signal-to-noise measurements are larger than physical size, suggesting that...
We report a systematic study of the switching and recording characteristics perpendicular magnetic media in which exchange coupling between granular oxide continuous cap layers was varied. The interfacial strength controlled by adjusting magnetization (M <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</sub> ) thickness (t) control layer (ECL) layers. mechanism highly depends on oxide-to-cap as well relative moment ratio Reversal process is...
InGaN-based materials and structures have attracted extensive attention in developing green light-emitting diodes (LEDs), but the fabrication of high-performance low-dimensional LEDs is seriously limited to sample preparation, device construction, gap, efficiency droop. In this work, a kind LED composed p-type InGaN layers one-dimensional wired ZnO via Ga incorporation, featuring wavelength 520.0 nm linewidth about 34.0 nm, was designed. The characteristics, with respect peak wavelengths...