A5091329711- Topological Materials and Phenomena
- Chalcogenide Semiconductor Thin Films
- Quantum and electron transport phenomena
- Physics of Superconductivity and Magnetism
- Surface and Thin Film Phenomena
- Rare-earth and actinide compounds
- Advanced Semiconductor Detectors and Materials
- 2D Materials and Applications
- Iron-based superconductors research
- ZnO doping and properties
- Phase-change materials and chalcogenides
- Thermodynamic and Structural Properties of Metals and Alloys
- Semiconductor materials and interfaces
- Graphene research and applications
- Semiconductor Quantum Structures and Devices
- Quantum Dots Synthesis And Properties
- Advanced Condensed Matter Physics
- Advanced ceramic materials synthesis
- Polymer Nanocomposite Synthesis and Irradiation
- Silicon Nanostructures and Photoluminescence
- Advanced Energy Technologies and Civil Engineering Innovations
- Gas Sensing Nanomaterials and Sensors
- Metal Extraction and Bioleaching
- Nonlinear Optical Materials Research
- Material Properties and Applications
Belgorod National Research University
2013-2023
Belgorod State Technological University
2021
We report the first experimental observation of superconductivity in Cd$_3$As$_2$ thin films without application external pressure. Surface studies suggest that observed transport characteristics are related to polycrystalline continuous part investigated with homogeneous distribution elements and Cd-to-As ratio close stoichiometric Cd$_3$As$_2$. The latter is also supported by Raman spectra studied films, which similar those single crystals. formation superconducting phase under study...
In the present work, we investigated elemental composition, structural and electrical properties of Cu2SnS3 (CTS) ternary semiconductor synthesized by pyrolytic decomposition precursors in vacuum. The molar ratio Sn/Cu precursor solution was varied from 0.2 to 0.6. x-ray diffraction Raman analyses confirmed that samples mainly consist tetragonal CTS phase with space group dependence conductivity on temperature range 10-300 K. A crossover between nearest-neighbor hopping Mott variable-range...
Целью работы является проведение исследования электропроводности композитных монокристаллов (InSb)98.2 – (NiSb)1.8. Модифицированным методом Бриджмена были получены монокристаллы композита эвтектической системы Используя сканирующий электронный микроскоп JSM-6610LV (Jeol), был определен состав и однородности распределения элементов энергодисперсионной рентгеновской спектроскопии. Определены интервалы прыжковой проводимости с переменной длинной прыжка типа Эфроса Шкловского (60 К 126.1 К) по...
Abstract Charge carriers parameters on a 2D-layer surface for (Cd 1−x−y Zn x Mn y ) 3 As 2 ( = 0.08) (the concentration <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>n</mml:mi> </mml:mrow> <mml:mn>2</mml:mn> <mml:mi>D</mml:mi> </mml:msub> </mml:math> 1.9 × 10 12 cm –2 , the effective value of <mml:mi>d</mml:mi> <mml:mo>=</mml:mo> <mml:mo stretchy="true">/</mml:mo> <mml:mn>3</mml:mn> 14.5 nm, wave vector <mml:mi>k</mml:mi>...
Purpose of the study. Synthesis cadmium arsenide magnetron films on various substrates and study their structure, composition, optical electrical properties.Methods. The deposition thin was carried out by method non-reactive highfrequency sputtering in an argon atmosphere. structure composition were studied using X-ray phase analysis, scanning electron microscopy, energy dispersive small-angle diffractometry. Optical studies performed Raman spectroscopy. results a properties are...
Features in the transverse magnetoresistance of single-crystalline diluted magnetic semiconductors a (Cd1−x−yZnxMny)3As2 system with x + y = 0.3 have been found and analyzed detail. Two groups samples examined. The first group were thermally annealed for long time, whereas second not annealed. Shubnikov–de Haas (SdH) oscillations observed both within 4.2 ÷ 30 K temperature range under field sweeping from 0 up to 11 T. value phase shift, according SdH oscillations, was be characteristic Berry...
The vapor phase growth of Cd 3 As 2 —Zn (in the following (Cd 1−x Zn x ) solid solutions process is described. 0,993 0,007 solution single crystals were synthesized. Scanning electron microscopy and diffraction data suggest high crystalline quality studied sample. Its structure surface morphology, indicating presence nuclei cleavage planes, investigated. Giant anisotropic magnetoresistance Shubnikov — de Haas oscillations observed at low temperatures. Obtained results suggests that...
Cadmium arsenide films on oxidized silicon substrates were obtained by RF magnetron sputtering.The structure and morphology of the surface studied atomic force microscopy (AFM) Raman spectroscopy (RS).The spectrum contains peaks characteristic for Cd3As2 at 194, 249, 303 cm -1 .The carrier mobility in samples was 0.15-1.7•10 3 2 V s concentrations 0.7-4.4•10 19cm -3 .It has been established that sample No 1 temperature range T 10-15 K, variable-range hopping (VRH) conductivity mechanism...
Abstract Based on the results of Shubnikov-de Haas oscillations study in single-crystalline diluted magnetic semiconductors (Cd 1−x−y Zn x Mn y ) 3 As 2 (CZMA) with х + = 0.2 and content ( у 0.02, 0.04, 0.06, 0.08) at temperatures T 4.2 to 30 K fields B 0 12 under hydrostatic pressure p 10 kbar, values phase shift β , indicating existence Berry all samples were determined. Thickness two-dimensional surface topological nanolayers CZMA 0.2) single crystals was defined. The rise concentration...
Abstract Single crystals of the diluted magnetic semiconductor (Zn 1- x Fe ) 3 As 2 ( = 0.005) were obtained by modified Bridgman method. According to results X-ray powder diffractometry, material was single-phased and isomorphic corresponded pure Zn 0.0). The research electroconductivity magnetoresistance carried out at temperature range from 10 300 K. It found that in 11 ÷ 19 K mechanism Mott type variable-range hopping conductivity. microparameters, characterizing K, defined.
Abstract The magnetic properties of the new semimagnetic semiconductor (Zn 1-x Fe x ) 3 As 2 with < 0.04 have been investigated over a wide temperature range. Single crystals ZFA were grown using modified Bridgeman technique. results X-ray analyses and magnetometry data show that border solid solutions in this system lay near = 0.015. Further increasing leads to growing second phase, which was identified as As. A notable feature our is spin-glass-type freezing moments range 10 - 50 K....