A5014240840- 2D Materials and Applications
- Advanced Memory and Neural Computing
- Chalcogenide Semiconductor Thin Films
- Ferroelectric and Negative Capacitance Devices
- X-ray Diffraction in Crystallography
- Crystallization and Solubility Studies
- Semiconductor materials and interfaces
- Polymer Nanocomposites and Properties
- Semiconductor Quantum Structures and Devices
- Graphene research and applications
- MXene and MAX Phase Materials
- Quantum Dots Synthesis And Properties
- Carbon Nanotubes in Composites
- Perovskite Materials and Applications
- Catalytic Processes in Materials Science
- Silicon and Solar Cell Technologies
Songshan Lake Materials Laboratory
2023-2024
Sun Yat-sen University
2023-2024
China National Petroleum Corporation (China)
2014
Near-infrared (NIR) polarization photodetectors with two-dimensional (2D) semiconductors and their van der Waals (vdW) heterostructures have presented great impact for the development of a wide range technologies, such as in optoelectronics communication fields. Nevertheless, lack photogenerated charge carrier at device's interface leads to poor collection efficiency low linear dichroism ratio, hindering achievement high-performance optoelectronic devices multifunctionalities. Herein, we...
Abstract Ferroelectric tunnel junctions (FTJs) have gained substantial attention as emerging electronic devices such nonvolatile memory and artificial synapse, owing to their low power consumption properties. In this work, a 2D semiconductor (2DS)/α‐In 2 Se 3 /metal FTJ structure is proposed that combines ferroelectric material semiconducting electrode. The incorporation of 2DS not only enhances the barrier height modulation but also provides an effective approach mitigate thermionic current...
With the gradual decline in Moore's law, traditional silicon-based technologies have encountered numerous challenges and limitations, prompting researchers to seek solutions. Two-dimensional (2D) van der Waals (vdWs) ferroelectric (Fe) field-effect transistors (FETs) (2D vdWs FeFETs) are devices that integrate emerging 2D materials into transistor structures. In comparison with complementary metal oxide semiconductor FETs (COMSFETs), they exhibit superior performance, including lower power...
Abstract 2D semiconductors show promise as a competitive candidate for developing future integrated circuits due to their immunity short‐channel effects and high carrier mobility at atomic layer thicknesses. The inherent defects Fermi level pinning effect lead n‐type transport characteristics in most semiconductors, while unstable unsustainable p‐type doping by various strategies hinders application many areas, such complementary metal‐oxide‐semiconductor (CMOS) devices. In this study, an...
This paper reports the preparation of coral-shaped topological morphology nascent polyethylene (PE) particles promoted by novel heterogeneous non-metallocene catalyst (m-CH3PhO)TiCl3/carbon nanotubes (CNTs), with AlEt3 used as a cocatalyst. Scanning electron microscope (SEM), high resolution transmission (HR-TEM) and inductively coupled plasma (ICP) emission spectroscopy were to determine content (m-CH3PhO)TiCl3. The carbon nanotube surface was treated Grignard Reagent prior reacting system...