- Radio Frequency Integrated Circuit Design
- Microwave Engineering and Waveguides
- Electromagnetic Compatibility and Noise Suppression
- Advanced Power Amplifier Design
- Photonic and Optical Devices
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Quantum Structures and Devices
- Millimeter-Wave Propagation and Modeling
- Advancements in PLL and VCO Technologies
- Silicon Carbide Semiconductor Technologies
- Advanced Antenna and Metasurface Technologies
- Graphene research and applications
- Superconducting and THz Device Technology
- Molecular Junctions and Nanostructures
- Analog and Mixed-Signal Circuit Design
- Radiation Effects in Electronics
- Microwave and Dielectric Measurement Techniques
- GaN-based semiconductor devices and materials
- Electrostatic Discharge in Electronics
- Telecommunications and Broadcasting Technologies
- Plasmonic and Surface Plasmon Research
- Hepatitis C virus research
- Electromagnetic wave absorption materials
- Semiconductor Lasers and Optical Devices
- VLSI and Analog Circuit Testing
Chinese PLA General Hospital
2024
Hangzhou Dianzi University
2015-2024
Zhejiang Province Institute of Architectural Design and Research
2017-2020
Zhejiang University
2017-2020
Bengbu Medical College
2011
Institute of Electronics
2005
Abstract An on-chip low-loss and high conversion efficiency plasmonic waveguide converter is demonstrated at sub-THz in CMOS. By introducing a subwavelength periodic corrugated structure onto the transmission line (T-line) implemented by top-layer metal, surface plasmon polaritons (SPP) are established to propagate signals with strongly localized surface-wave. To match both impedance momentum of other components TEM-wave propagation, mode featured smooth bridge between Ground coplanar (GCPW)...
Abstract Background HBV infection can result in severe liver diseases and is one of the primary causes cell carcinoma-related mortality. Liuwei Wuling tablet (LWWL) a traditional Chinese medicine formula, with protecting decreasing enzyme activity, usually used to treat chronic hepatitis B NAs clinic. However, its main active ingredients mechanism action have not been fully investigated. Hence, we aimed screen ingredient effective combinations from explore anti-herpatitis virus activity...
The paper presents the implementation of three 60 GHz patch antennas, including a single antenna, two antenna arrays with 4×1 and 4×4 unit respectively. antennas are designed for front-ends wireless communication subsystems. To acquire more concentrated radiation direction higher gain, which increase propagation distance subsystem. A four-way power divider combined series parallel network is employed to feed array improves bandwidth performance arrays. These fabricated based on Rogers...
Abstract In this article, an analytical method for designing transformer matching network of millimeter‐wave (mm‐wave) low noise amplifier (LNA) is presented. the circuit design, neutralizing capacitors (NCs) structure used to mitigate intrinsic gate‐drain feedback capacitance in transistor increasing reverse isolation and available gain, thus allowing common source (CS) can be regarded as unilateralized active amplification part. The equivalent part modeled, then equations established,...
A carbon-based inductor may serve as an important passive component in a radio-frequency (RF) integrated circuit (IC). In this work, chemical vapor deposition (CVD) synthesized monolayer graphene and graphite inductors are fabricated their Q-factors investigated. We find that the large series resistance of signal path (including coil contact resistance) causes negative at whole frequency range measurement. Comparatively, some have all above zero, due to small resistance. also note other...
A wideband CMOS LC voltage controlled oscillator (VCO) with small VCO gain (K <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">VCO</sub> ) and band step variation was developed. In order to get K across different sub-bands, 8-unit capacitor array optimized an additional of varactors introduced into the LC-tank, both which are temperature weighted. Implemented in a 65 nm RF technology, post-layout simulation shows that proposed can be tuned from...
The paper presents design of 60GHz parallel coupled-line filters with Chebyshev passbands. Etching limit printed circuit board technology has been taken into account and analyzed. Three filters, the center operation frequency are all 60GHz, designed pre-distortion based on law fabrication tolerances, including two conventional a V-shaped one which advantage input output at same horizontal. comparison, between measured results simulation post-simulation physical dimensions fabricated covered...
A physics-based equivalent lumped-circuit model for on-chip symmetric intertwined transformer is presented in this paper. This accurately predicts the skin effect and proximity of primary secondary coils inductors over a wide-frequency range using ladder `4-element' structure, respectively. One loop two RC networks are used to substrate loss related eddy current capacitive reactive lateral coupling. Two transformers were fabricated on standard 0.18-um 1P6M RF CMOS technology further verify...
This paper presents the design of a broadband power amplifier with high-efficiency using silicon LDMOSFETs. With comparing frequency response single LC matching network and two-stage one, multiple networks composed micro-strip lines capacitors were adopted to enhance bandwidth. A was implemented based on packaged Si-LDMOS transistor, saturated output 15 W gain 14.5 dB at 1-dB compression point maximum power-added efficiency (PAE) 50% are demonstrated from 1.8GHz 2.0GHz in this work.
The graphene coplanar waveguide (CPW) has recently been found to have large insertion loss (typically larger than 50 dB/100 μm), which mainly results from the resistance of graphene. poor radio-frequency transmission property hampers its application in interconnect, a low material is thus required. In this paper, low-resistance graphite CPWs with effective length up 200 μm were fabricated. A record CPW (2.76 μm) demonstrated, and average our only ∼1/5 that monolayer CPWs. Moreover, we find...
In this paper, a D-band monolithic microwave integrated circuit low noise amplifier (LNA) is designed by using 0.5 μm InP high electron mobility transistor (HEMT) technology. The mainly composed of five-stage common-source amplification structure, and resistance capacitance are connected in series to form feedback network, which can improve the stability circuit. parallel grounding on DC bias constitute low-pass absorb gain at frequency, prevent from self-oscillation. 120-150GHz frequency...
This paper presents the design and simulation results of a multi-band CMOS low-noise amplifier (LNA) from 1.9GHz to 2.4GHz. Input output impedance matching networks are achieved with extra variable capacitor controlled by voltage. The capacitors used in circuit can make LNA operate at some key frequency bands between is designed using IBM 90nm RF process employs supply voltage 1.5V dissipates DC power 15mW. complete achieves good input S11 lower than −15dB S22 −10dB 1.9–2.4GHz. gain above...
While many studies on radio-frequency (RF) graphene field-effect transistor (GFET) aimed to study its high performances, explorations of the long-term stability RF GFETs in atmosphere may be required as well. In this paper, we investigated stored ambient for four years. Both and direct current characteristics are measured compared with initial properties. Changes current-gain cut-off frequency mobility, reductions maximum oscillation frequency, peak transconductance gate capacitance observed...
A compact broadband monolithic microwave integrated circuit (MMIC) sub-harmonic mixer using an OMMIC 70 nm GaAs mHEMT technology is demonstrated for 60 GHz down-converter applications. The present employs anti-parallel diode pair (APDP) to fulfill a mixing mechanism. Quasi-lumped components are employed broaden the operational bandwidth and minimize chip size 1.5×0.77 mm2. conversion gain optimized by quasi-lumped 90° phase shift stub. Experimental results show that from 50 GHz, varies...
The paper presents the design of a 48-78GHz sub-harmonic pumped image rejection mixer (SHIRM) based on 3μm GaAs technology. SHIRM contains two identical 2 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">nd</sup> APDP-Based SHP mixers, modified quadrature-phase RF Lange coupler and an in-phase LO Wilkinson power divider. quasi-lumped topology is utilized with compact size 1.7×1.6 mm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . conversion...
In this paper, a newly active bias linearizer is introduced based on GaAs HBT technology. The proposed composed of circuit and reverse-biased diode maintains the fixed base voltage power stage HBTs, effectively improves gain compression, more importantly, it consumes no additional die area DC power. A two-stage amplifier for wide-band code division multiple access (W-CDMA) application was designed to verify novel technique. At an output 28 dBm, input 1dB compression by 6 dB phase distortion...
This paper presents a highly linear wideband low-noise amplifier (LNA) adopting the current amplification and distortion cancellation, it exploits noise cancellation for low-noise, employs low second-order PMOS/NMOS input pair mirror in order to improve linearity. The proposed CMOS LNA exhibits power gain of 16.0 dB, an IIP3 9.5 dBm, average figure 2.9 dB with 24.4 mW consumption at 1.8V supply. was designed 0.18-μm RF process.
This paper demonstrates a 20–55 GHz broadband low-power down-conversion mixer applies in 5G millimeter-wave (MMW) communication using 65-nm CMOS process. The structure of the is modified Gilbert-cell, which reduces demand supply voltage. By weak inversion biasing, low DC power consumption and LO can be achieved. At IF output, A resistive-feedback inverter amplifier used to improve conversion gain. Marchand balun with compensation line designed for matching while converting differential...
A frequency reconfigurable image rejection filter (IRF) for 5G FR2 bands (24.25–27.5 GHz and 37–40 GHz) transceivers is presented. The circuit adopts a novel pole-zero inversion (PZI) topology constructs two operating modes, high-pass (HP) mode low-pass (LP) mode. PZI means the poles of one are zeros other mode, it realized by types (series-parallel, thru-ground) resonators with zeros. IRF fabricated using 65-nm CMOS process core size 0.0315 mm <inline-formula...
A 30~60 GHz broadband down-conversion mixer driven by low local oscillator (LO) power is presented. The utilizes an input signal coupling technique based on the Marchand balun to achieve operation and achieves LO drive DC consumption through use of a weak inversion bias with Gilbert switching devices. conversion single-ended differential signals achieved using compensation lines, equivalent circuit analysis performed. For intermediate frequency (IF) output, self-biased IF trans-impedance...
This paper presents a new wide-band spiral inductor model on silicon substrate especially in heavily doped process. Skin effect and proximity are well predicted by using ladder `4-element' structure power resistor. For low resistively substrate, since all metal lines couple laterally to each other through the conductive electric coupling between can be modeled parallel combination of resistance capacitance. The proposed has been verified with measured data fabricated 2P4M CMOS shows...
A D-band broadband frequency doubler based on a 65-nm CMOS technology is proposed in this paper. This with an output of 110~170GHz implemented by single-balanced topology Marchand balun. When the input power 10dBm, conversion gain -13dB to -10dB, fundamental suppression greater than 19dB, and 3-dB bandwidth 50%. The chip size including all pads 0.45*0.58 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .
A compact broadband monolithic sub-harmonic mixer is presented in a 70 nm GaAs Technology for millimeter wave wireless communication application. The proposed adopts novel multi-line coupler structure; where the two-sided coupling energy of radio frequency (RF) and local oscillation (LO) signals are both collected efficiently feed to anti-parallel diode pair (APDP) topology; resulting performance chip size. As comparison same circuit configuration; five-line can expand bandwidth existing...
This paper presents the effects of defected ground structure (DGS) on different planes in RF power amplifiers (PAs). Two DGS patterns etched front and back printed circuit board which are named Top-DGS Bottom-DGS, a thru microstrip line manufactured measured to compare insert loss at fundamental second harmonic frequencies. In order evaluate Top-DGS, Bottom-DGS without PA, three 4W PA have been designed measured. Measured results show that with can reject about 13dB Pout 34.76dBm, achieve...
In this article, a compact uniplanar branch line coupler is designed to achieve arbitrary power division ratio and multi suppression frequencies simultaneously. By replacing conventional quarter wavelength lines with the equivalent T-shaped lines, branch-line could have while maintaining performance of proposed at fundamental frequency. Its circuit parameters are determined by transmission theory, explicit design formulas derived ABCD-matrix. For verification, planar microstrip simulated,...