A5075741016- Radio Frequency Integrated Circuit Design
- Advanced Power Amplifier Design
- Microwave Engineering and Waveguides
- GaN-based semiconductor devices and materials
- Advanced DC-DC Converters
- Analog and Mixed-Signal Circuit Design
- Wireless Body Area Networks
- Photonic and Optical Devices
- Semiconductor Quantum Structures and Devices
- Superconducting and THz Device Technology
- Electrostatic Discharge in Electronics
- Antenna Design and Optimization
- Advancements in Semiconductor Devices and Circuit Design
- Multilevel Inverters and Converters
- Microgrid Control and Optimization
- Antenna Design and Analysis
- Silicon Carbide Semiconductor Technologies
Tianjin University
2022-2025
Nankai University
2024
This study presents a hard-switching full-bridge DC-DC converter with synchronous rectification based on Gallium Nitride (GaN) transistors to evaluate the advantages of GaN devices in power supplies. In comparison traditional silicon-based devices, are utilized both primary and secondary stages converter, exploiting GaN’s lower on-resistance enhance performance. The operates at switching frequency 300 kHz, an input voltage range 36 V 75 V, delivering output 28 V/42 A. Experimental results...
This article presents the frequency-domain-based modified impedance tuning analysis (ITA) method and its demonstration in designing a class-Ф <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> dc–dc converter with load-independent zero voltage switching (ZVS) characteristics <italic xmlns:xlink="http://www.w3.org/1999/xlink">.</i> By adjusting second-order harmonic voltage, near trapezial drain-to-source (...
To achieve simple topology and easy controllability, this paper presents a Class-E converter adopting the proposed switchable-coupled-inductor input-regulating (SCI-IR) method to constant output voltage under variable inputs. In comparison other regulating or control schemes, features circuit structure incurs negligible power losses during input-regulation process. By analysing circuits with resonance tank at steady-state operations, we formulate SCI-IR design parameters procedures,...
This brief presents a 220-GHz five-stage differential amplifier in IHP SG13G2 0.13- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> BiCMOS technology. The employs multi-coupling inductors and transmission lines at the inter-stage to perform high-gain, high-robustness miniaturization. compact used notation="LaTeX">$G_{\mathrm{ m}}$ -boosting technique noise...
This paper proposes a wideband low noise amplifier adopting feedback networks to improve gain and performance. In the proposed work, dual-path of complementary NMOS PMOS configuration boosts common-gate stage, which reduces power consumption contributes input impedance matching simultaneously. Fabricated in SMIC 55nm RF-CMOS technology, simulated results indicate that S <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">21</inf> is 12.8 dB, figure...